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Origami Terahertz Detectors Realized by Inkjet Printing of Carbon Nanotube Inks

ACS Applied Nano Materials

Llinas, Juan P.; Hekmaty, Michelle A.; Talin, A.A.; Leonard, Francois L.

Terahertz (THz) technology has shown promise for several applications, but limitations in sources and detectors have prevented broader adoption. Existing THz detectors are rigid, planar, and fabricated using complex technology, making it difficult to integrate into systems. Here we demonstrate THz detectors fabricated by inkjet printing on submicrometer thick, ultraflexible substrates. By developing p- and n-type carbon nanotube inks, we achieve optically thick pā€“n junction and p-type devices, enabling antenna-free pixels for THz imaging. By further designing and folding the printed devices, we realize origami-inspired architectures with improved performance over single devices, achieving a noise-equivalent power of 12 nW/Hz1/2 at room temperature with no voltage bias. Our approach opens avenues for nonplanar, foldable, deployable, insertable, and retractable THz detectors for applications in nondestructive inspection.

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Ion beam modification of topological insulator bismuth selenide

Applied Physics Letters

Sharma, P.A.; Lima Sharma, A.L.; Hekmaty, Michelle A.; Hattar, K.; Stavila, Vitalie S.; Goeke, R.; Erickson, K.; Medlin, Douglas L.; Brahlek, M.; Koirala, N.; Oh, S.

We demonstrate chemical doping of a topological insulator Bi2Se3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi2Se3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi2Se3, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.

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Using galvanostatic electroforming of Bi1-xSbx nanowires to control composition, crystallinity, and orientation

Journal of Materials Research

Limmer, Steven J.; Medlin, Douglas L.; Siegal, Michael P.; Hekmaty, Michelle A.; Lensch-Falk, Jessica L.; Erickson, Kristopher J.; Pillars, Jamin R.; Yelton, W.G.

Using galvanostatic pulse deposition, we studied the factors influencing the quality of electroformed Bi1-xSbxnanowires with respect to composition, crystallinity, and preferred orientation for high thermoelectric performance. Two nonaqueous baths with different Sb salts were investigated. The Sb salts used played a major role in both crystalline quality and preferred orientations. Nanowire arrays electroformed using an SbI3-based chemistry were polycrystalline with no preferred orientation, whereas arrays electroformed from an SbCl3-based chemistry were strongly crystallographically textured with the desired trigonal orientation for optimal thermoelectric performance. From the SbCl3 bath, the electroformed nanowire arrays were optimized to have nanocompositional uniformity, with a nearly constant composition along the nanowire length. Nanowires harvested from the center of the array had an average composition of Bi0.75Sb0.25. However, the nanowire compositions were slightly enriched in Sb in a small region near the edges of the array, with the composition approaching Bi0.700.30.

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Morphological evolution of Ag2Te precipitates in thermoelectric PbTe

Sugar, Joshua D.; Hekmaty, Michelle A.; Medlin, Douglas L.

Nanostructuring of thermoelectric materials is expected to enhance thermoelectric properties by reducing the thermal conductivity and improving the power factor from that of homogeneous bulk materials. In multiphase, nanostructured thermoelectric materials, an understanding of precipitation mechanisms and phase stability is crucial for engineering systems with optimal thermoelectric performance. In this presentation we will discuss our investigations of the morphological evolution, orientation relationship, and composition of Ag{sub 2}Te precipitates in PbTe using transmission electron microscopy (TEM) and atom probe tomography (APT). Annealing in the region of two phase equilibrium between Ag{sub 2}Te and PbTe results in the formation of monoclinic {beta}-Ag{sub 2}Te precipitates as determined by x-ray and electron diffraction studies. These precipitates are aligned to the PbTe matrix with an orientation relationship that aligns the Te sub-lattices in the monoclinic and rock salt structures. This relationship is the same as we have reported earlier for {beta}-Ag{sub 2}Te precipitates in rocksalt AgSbTe{sub 2}. Observations using TEM and APT suggest that the Ag{sub 2}Te precipitates initially form as coherent spherical precipitates which upon coarsening evolve into flattened semi-coherent disks along the <100>PbTe directions which is consistent with theoretical predictions for elastically strained precipitates in a matrix. Our HRTEM observations show that sufficiently small precipitates are coherently embedded, while larger precipitates exhibit misfit dislocations and multiple monoclinic variants to relieve the elastic strain. Analysis of the composition of both precipitate groups using APT indicates that the larger precipitates exhibit compositions close to equilibrium while the smaller nanoscale precipitates exhibit enhanced Pb compositions. This detailed analysis of the orientation relationship, morphology, composition, and coarsening behavior of embedded Ag{sub 2}Te precipitates may be helpful in understanding the precipitation mechanisms and microstructure of related thermoelectric materials, such as LAST.

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Results 1ā€“25 of 32
Results 1ā€“25 of 32