Neutron sensing is critical in civilian and military applications. Conventional neutron sensors are limited by size, weight, cost, portability and helium supply. Here the microfabrication of gadolinium (Gd) conversion material-based heterojunction diodes for detecting thermal neutrons using electrical signals produced by internal conversion electrons (ICEs) is described. Films with negligible stress were produced at the tensile-compressive crossover point, enabling Gd coatings of any desired thickness by controlling the radiofrequency sputtering power and using the zero-point near p(Ar) of 50 mTorr at 100 W. Post-deposition Gd oxidation-induced spallation was eliminated by growing a residual stress-free 50 nm neodymium-doped aluminum cap layer atop Gd. The resultant coatings were stable for at least 6 years, demonstrating excellent stability and product shelf-life. Depositing Gd directly on the diode surface eliminated the air gap, leading to a 200-fold increase in electron capture efficiency and facilitating monolithic microfabrication. The conversion electron spectrum was dominated by ICEs with energies of 72, 132 and 174 keV. Results are reported for neutron reflection and moderation by polyethylene for enhanced sensitivity, and γ- and X-ray elimination for improved specificity. The optimal Gd thickness was 10.4 μm for a 300 μm-thick partially depleted diode of 300 mm 2 active surface area. Fast detection (within 10 min) at a neutron source-to-diode distance of 11.7 cm was achieved with this configuration. All ICE energies along with γ-ray and K α,β X-rays were modeled to emphasize correlations between experiment and theory. Semi-conductor thermal neutron detectors offer advantages for field-sensing of radioactive neutron sources.
Neutron sensing is critical in civilian, military, industrial, biological, medical, basic research, and environmental applications. Conventional neutron sensors are limited by size, weight, cost, portability, and helium supply. Here the microfabrication of Gd conversion material-based heterojunction diodes is described for detecting thermal neutrons using electrical signals produced by internal conversion electrons (ICE). Films with negligible stress were produced at the tensile-compressive crossover point, enabling Gd coatings of any desired thickness by controlling the radiofrequency sputtering power and using the zero-point near p(Ar) of 50 mTorr at 100 W. Post-deposition Gd oxidation-induced spallation was eliminated by growing a residual stress-free 50 nm neodymium-doped aluminum cap layer atop Gd. Resultant coatings were stable for at least six years demonstrating excellent product shelf life. Depositing Gd on the diode surface eliminated air gap, leading to improved efficiency and facilitating monolithic microfabrication. The conversion electron spectrum was dominated by ICE with energies of 72, 132, and 174 keV. Results are reported on neutron reflection and moderation by polyethylene for enhanced sensitivity and g- and X-ray elimination for improved specificity. Optimal Gd thickness was 10.4 um with 300 um thick partially depleted diode of 300 mm2 active surface area. Fast detection within 10 minutes at a neutron source-to-diode distance of 11.7 cm was achieved using this configuration. All ICE energies along with g-ray and Ka X-ray were modeled to emphasize correlations between experiment and theory and to calculate efficiencies. Semiconductor thermal neutron detectors offer advantages for field-sensing of radioactive neutron sources. ACKNOWLEDGEMENTS Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. We thank Edward Cole, David Wheeler, Robert Koudelka, and Lyle Brunke for productive interactions and materials support.