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Fine Pitch Bonding for High Density Interconnects

Hirabayashi, Mieko H.; Jordan, Matthew J.; Hollowell, Andrew E.; Wiwi, Michael W.; Herrera, Sergio A.

CTE (coefficient of thermal expansion) mismatch between two wafers has potential for brittle failure when large areas are bonded on top of one another (wafer to wafer or wafer to die bonds). To address this type of failure, we proposed patterning a polymer around metallic interconnects. For this project, utilized benzo cyclobutene (BCB) to form the bond and accommodate stress. For the metal interconnects, we used indium. To determine the benefits of utilizing BCB, mechanical shear testing of die bonding with just BCB were compared to die bonded just with oxide. These tests demonstrated that BCB, when cured for only 30 minutes and bonded at 200°C, the BCB was able to withstand shear forces similar to oxide. Furthermore, when the BCB did fail, it experienced a more ductile failure, allowing the silicon to crack, rather than shatter. To demonstrate the feasibility of using BCB between indium interconnects, wafers were pattered with layers of BCB with vias for indium or ENEPIG (electroless nickel, electroless palladium, immersion gold). Subsequently, these wafers were pattered with a variety of indium or ENEPIG interconnect pitches, diameters, and heights. These dies were bonded under a variety of conditions, and those that held a bond, were cross-sectioned and imaged. Images revealed that certain bonding conditions allow for interconnects and BCB to achieve a void-less bond and thus demonstrate that utilizing polymers in place of oxide is a feasible way to reduce CTE stress.

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Microsystem Enabled Photovoltaics

Nielson, Gregory N.; Cruz Campa, Jose L.; Okandan, Murat O.; Lentine, Anthony L.; Sweatt, W.C.; Gupta, Vipin P.; Tauke-Pedretti, Anna; Jared, Bradley H.; Resnick, Paul J.; Cederberg, Jeffrey G.; Paap, Scott M.; Sanchez, Carlos A.; Biefeld, Robert M.; Langlois, Eric L.; Yang, Benjamin B.; Koleske, Daniel K.; Wierer, Jonathan J.; Miller, William K.; Elisberg, Brenton E.; Zamora, David J.; Luna, Ian L.; Saavedra, Michael P.; Alford, Charles A.; Ballance, Mark H.; Wiwi, Michael W.; Samora, S.; Chavez, Julie C.; Pipkin, Jennifer R.; Nguyen, Janet N.; Anderson, Ben A.; Gu, Tian G.; Agrawal, Gautum A.; Nelson, Jeffrey S.

Abstract not provided.

Silicon photonics platform for national security applications

IEEE Aerospace Conference Proceedings

Lentine, Anthony L.; DeRose, Christopher T.; Davids, Paul D.; Martinez, Nicolas J.D.; Zortman, William A.; Cox, Jonathan A.; Jones, Adam; Trotter, Douglas C.; Pomerene, Andrew P.; Starbuck, Andrew L.; Savignon, Daniel J.; Bauer, Todd B.; Wiwi, Michael W.; Chu, Patrick B.

We review Sandia's silicon photonics platform for national security applications. Silicon photonics offers the potential for extensive size, weight, power, and cost (SWaP-c) reductions compared to existing III-V or purely electronics circuits. Unlike most silicon photonics foundries in the US and internationally, our silicon photonics is manufactured in a trusted environment at our Microsystems and Engineering Sciences Application (MESA) facility. The Sandia fabrication facility is certified as a trusted foundry and can therefore produce devices and circuits intended for military applications. We will describe a variety of silicon photonics devices and subsystems, including both monolithic and heterogeneous integration of silicon photonics with electronics, that can enable future complex functionality in aerospace systems, principally focusing on communications technology in optical interconnects and optical networking.

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13 Results
13 Results