Publications

In this work, we prove the existence of cascaded second-order nonlinearities in a dielectric metasurface by analyzing the second and third wave mixing signal in conjunction with crystal symmetry and polarization selection rules.

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We demonstrate an extremely nonlinear all-dielectric metasurface that employs intersubband polaritons to achieve a second-harmonic conversion coefficient of 5 x 10-4 W-1 and second-harmonic power conversion efficiency of 0.015% at nominal pump intensities of 11 kW/cm2. Furthermore, through heterostructure design, we achieve microscopic control of the nonlinearity and demonstrate suppression or enhancement of second-harmonic generation by controlling the polarity of the resonant χ(2).

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Ultrafast all-optical switching using Mie resonant metasurfaces requires both on-demand tunability of the wavefront of the light and ultrafast time response. However, devising a switching mechanism that has a high contrast between its "on"and "off"states without compromising speed is challenging. Here, we report the design of a tunable Mie resonant metasurface that achieves this behavior. Our approach utilizes a diffractive array of semiconductor resonators that support both dipolar and quadrupolar Mie resonances. By balancing the strengths of the dipole and quadrupole resonances, we can suppress radiation into the first diffraction order, thus creating a clearly delineated "off"-state at the operating wavelength. Then, we use optical injection of free- carriers to spectrally shift the multipoles and rebalance the multipole strengths, thereby enabling radiation into the diffraction order - all on an ultrafast timescale. We demonstrate ultrafast off-to-on switching with Ion/Ioff ≈ 5 modulation of the diffracted intensity and ultrafast on-to-off switching with Ion/Ioff ≈ 9 modulation. Both switches exhibit a fast τtr ≈ 2.7 ps relaxation time at 215 μJ cm-2 pump fluence. Further, we show that for higher fluences, the temporal response of the metasurface is governed by thermo-optic effects. This combination of multipole engineering with lattice diffraction opens design pathways for tunable metasurface-based integrated devices.

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Mie-resonant dielectric metasurfaces are excellent candidates for both fundamental studies related to light-matter interactions and for numerous applications ranging from holography to sensing to nonlinear optics. To date, however, most applications using Mie metasurfaces utilize only weak light-matter interaction. Here, we go beyond the weak coupling regime and demonstrate for the first time strong polaritonic coupling between Mie photonic modes and intersubband (ISB) transitions in semiconductor heterostructures. Furthermore, along with demonstrating ISB polaritons with Rabi splitting as large as 10%, we also demonstrate the ability to tailor the strength of strong coupling by engineering either the semiconductor heterostructure or the photonic mode of the resonators. Unlike previous plasmonic-based works, our new all-dielectric metasurface approach to generate ISB polaritons is free from ohmic losses and has high optical damage thresholds, thereby making it ideal for creating novel and compact mid-infrared light sources based on nonlinear optics.

In this work, we investigate the linear optical response of a dielectric metasurface made of vertically-oriented germanium ellipses deposited on walls of a micron-scale cubic silicon nitride unit cell support matrix.

The color of light is a fundamental property of electromagnetic radiation; as such, control of the frequency is a cornerstone of modern optics. Nonlinear materials are typically used to generate new frequencies, however the use of time-variant systems provides an alternative approach. Utilizing a metasurface that supports a high-quality factor resonance, we demonstrate that a rapidly shifting refractive index will induce frequency conversion of light that is confined in the nanoresonator meta-atoms. We experimentally observe this frequency conversion and develop a time-dependent coupled mode theory model that well describes the system. The intersection of high quality-factor resonances, active materials, and ultrafast transient spectroscopy leads to the demonstration of metasurfaces operating in a time-variant regime that enables enhanced control over light-matter interaction.

A wall-first variant of membrane projection lithography (MPL) is introduced which yields three-dimensional meta-films; mm-scale structures with micron-scale periodicity and 3D nm-scale unit cell structure. These meta-films combine aspects of photonic crystals, metamaterials and plasmonic nano antennas in their infrared scattering behavior. We present the fabrication approach, and modeling/IR characterization results.

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Here, the design, fabrication, and characterization of an actively tunable long-wave infrared detector, made possible through direct integration of a graphene-enabled metasurface with a conventional type-II superlattice infrared detector, are reported. This structure allows for post-fabrication tuning of the detector spectral response through voltage-induced modification of the carrier density within graphene and, therefore, its plasmonic response. These changes modify the transmittance through the metasurface, which is fabricated monolithically atop the detector, allowing for spectral control of light reaching the detector. Importantly, this structure provides a fabrication-controlled alignment of the metasurface filter to the detector pixel and is entirely solid-state. Using single pixel devices, relative changes in the spectral response exceeding 8% have been realized. These proof-of-concept devices present a path toward solid-state hyperspectral imaging with independent pixel-to-pixel spectral control through a voltage-actuated dynamic response.

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A complementary metal oxide semiconductor (CMOS) compatible fabrication method for creating three-dimensional (3D) meta-films is presented. In contrast to metasurfaces, meta-films possess structural variation throughout the thickness of the film and can possess a sub-wavelength scale structure in all three dimensions. Here we use this approach to create 2D arrays of cubic silicon nitride unit cells with plasmonic inclusions of elliptical metallic disks in horizontal and vertical orientations with lateral array-dimensions on the order of millimeters. Fourier transform infrared (FTIR) spectroscopy is used to measure the infrared transmission of meta-films with either horizontally or vertically oriented ellipses with varying eccentricity. Shape effects due to the ellipse eccentricity, as well as localized surface plasmon resonance (LSPR) effects due to the effective plasmonic wavelength are observed in the scattering response. The structures were modeled using rigorous coupled wave analysis (RCWA), finite difference time domain (Lumerical), and frequency domain finite element (COMSOL). The silicon nitride support structure possesses a complex in-plane photonic crystal slab band structure due to the periodicity of the unit cells. We show that adjustments to the physical dimensions of the ellipses can be used to control the coupling to this band structure. The horizontally oriented ellipses show narrow, distinct plasmonic resonances while the vertically oriented ellipses possess broader resonances, with lower overall transmission amplitude for a given ellipse geometry. We attribute this difference in resonance behavior to retardation effects. The ability to couple photonic slab modes with plasmonic inclusions enables a richer space of optical functionality for design of metamaterial-inspired optical components.

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The Lorentz-like effective medium resonance (LEMR) exhibited by the longitudinal effective permittivity of semiconductor hyperbolic metamaterials (SHMs) has been known for some time. However, direct observation of this resonance proved to be difficult. Herein, we experimentally demonstrate its existence by strongly coupling SHMs to plasmonic metasurfaces. We consider four strong coupling implementations of SHMs that exhibit different LEMR absorption profiles (both in frequency and in strength) to validate our approach.

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High-harmonic generation (HHG) is a signature optical phenomenon of strongly driven, nonlinear optical systems. Specifically, the understanding of the HHG process in rare gases has played a key role in the development of attosecond science1. Recently, HHG has also been reported in solids, providing novel opportunities such as controlling strong-field and attosecond processes in dense optical media down to the nanoscale2. Here, we report HHG from a low-loss, indium-doped cadmium oxide thin film by leveraging the epsilon-near-zero (ENZ) effect3–8, whereby the real part of the material’s permittivity in certain spectral ranges vanishes, as well as the associated large resonant enhancement of the driving laser field. We find that ENZ-assisted harmonics exhibit a pronounced spectral redshift as well as linewidth broadening, resulting from the photo induced electron heating and the consequent time-dependent ENZ wavelength of the material. Our results provide a new platform to study strong-field and ultrafast electron dynamics in ENZ materials, reveal new degrees of freedom for spectral and temporal control of HHG, and open up the possibilities of compact solid-state attosecond light sources.

We demonstrate all-optical switching of high quality factor quasibound states in the continuum resonances in broken symmetry GaAs metasurfaces. By slightly breaking the symmetry of the GaAs nanoresonators, we enable leakage of symmetry protected bound states in the continuum (BICs) to free space that results in sharp spectral resonances with high quality factors of ∼500. We tune the resulting quasi-BIC resonances with ultrafast optical pumping at 800 nm and observe a 10 nm spectral blue shift of the resonance with pump fluences of less than 100 μJ cm-2. The spectral shift is achieved in an ultrafast time scale (<2.5 ps) and is caused by a shift in the refractive index mediated by the injection of free carriers into the GaAs resonators. An absolute reflectance change of 0.31 is measured with 150 μJ cm-2. Our results demonstrate a proof-of-concept that these broken symmetry metasurfaces can be modulated or switched at ultrafast switching speeds with higher contrast at low optical fluences (<100 μJ cm-2) than conventional Mie-metasurfaces.

In this work we show our results on the harmonic generation and nonlinear frequency mixing enhanced by Mie modes in GaAs metasurfaces. Moreover, we show enhancement and directionality control of the quantum dot emission embedded in the metasurface.

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A prominent nonlinear optical phenomenon that is extensively studied using nanostructured materials is second-harmonic generation (SHG) as it has applications in various fields. Achieving efficient SHG from a nanostructure requires a large second-order nonlinear susceptibility of the material system and large electromagnetic fields. For practical applications, the nanostructures should also have low losses, high damage thresholds, large bandwidths, wavelength scalability, dual mode operation in transmission and reflection, monolithic integrability, and ease of fabrication. While various approaches have demonstrated efficient SHG, to the best of our knowledge, none have demonstrated all these desired qualities simultaneously. Here, we present a hybrid approach for realizing efficient SHG in an ultrathin dielectric-semiconductor nonlinear device with all the above-mentioned desired properties. Our approach uses high quality factor leaky mode resonances in dielectric metasurfaces that are coupled to intersubband transitions of semiconductor quantum wells. Using our device, we demonstrate SHG at pump wavelengths ranging from 8.5 to 11 μm, with a maximum second-harmonic nonlinear conversion factor of 1.1 mW/W2 and maximum second-harmonic conversion efficiency of 2.5 × 10-5 at modest pump intensities of 10 kW/cm2. Our results open a new direction for designing low loss, broadband, and efficient ultrathin nonlinear optical devices.

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Metamaterials research has developed perfect absorbers from microwave to optical frequencies, mainly featuring planar metamaterials, also referred to as metasurfaces. In this study, we investigated vertically oriented metamaterials, which make use of the entire three-dimensional space, as a new avenue to widen the spectral absorption band in the infrared regime between 20 and 40 THz. Vertically oriented metamaterials, such as those simulated in this work, can be experimentally realized through membrane projection lithography, which allows a single unit cell to be decorated with multiple resonators by exploiting the vertical dimension. In particular, we analyzed the cases of a unit cell containing a single vertical split-ring resonator (VSRR), a single planar split-ring resonator (PSRR), and both a VSRR and PSRR to explore intra-cell coupling between resonators. We show that the additional degrees of freedom enabled by placing multiple resonators in a unit cell lead to novel ways of achieving omnidirectional super absorption. Our results provide an innovative approach for controlling and designing engineered nanostructures.

We use GaAs metasurfaces with (111) crystal orientation to channel the second harmonic generation (SHG) into the zero-diffraction order that is suppressed for SHG obtained from GaAs metasurfaces with (100) orientation.

We demonstrate ultrafast tuning of Fano resonances in a broken symmetry III-V metasurface using optical pumping. The resonance is spectrally shifted by 10 nm under low pump fluences of < 100 uJ·cm-2.

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A frequency mixer is a nonlinear device that combines electromagnetic waves to create waves at new frequencies. Mixers are ubiquitous components in modern radio-frequency technology and microwave signal processing. The development of versatile frequency mixers for optical frequencies remains challenging: such devices generally rely on weak nonlinear optical processes and, thus, must satisfy phase-matching conditions. Here we utilize a GaAs-based dielectric metasurface to demonstrate an optical frequency mixer that concurrently generates eleven new frequencies spanning the ultraviolet to near-infrared. The even and odd order nonlinearities of GaAs enable our observation of second-harmonic, third-harmonic, and fourth-harmonic generation, sum-frequency generation, two-photon absorption-induced photoluminescence, four-wave mixing and six-wave mixing. The simultaneous occurrence of these seven nonlinear processes is assisted by the combined effects of strong intrinsic material nonlinearities, enhanced electromagnetic fields, and relaxed phase-matching requirements. Such ultracompact optical mixers may enable a plethora of applications in biology, chemistry, sensing, communications, and quantum optics.

We study semiconductor hyperbolic metamaterials (SHMs) at the quantum limit experimentally using spectroscopic ellipsometry as well as theoretically using a new microscopic theory. The theory is a combination of microscopic density matrix approach for the material response and Green’s function approach for the propagating electric field. Our approach predicts absorptivity of the full multilayer system and for the first time allows the prediction of in-plane and out-of-plane dielectric functions for every individual layer constructing the SHM as well as effective dielectric functions that can be used to describe a homogenized SHM.

The ability to control the light-matter interaction with an external stimulus is a very active area of research since it creates exciting new opportunities for designing optoelectronic devices. Recently, plasmonic metasurfaces have proven to be suitable candidates for achieving a strong light-matter interaction with various types of optical transitions, including intersubband transitions (ISTs) in semiconductor quantum wells (QWs). For voltage modulation of the light-matter interaction, plasmonic metasurfaces coupled to ISTs offer unique advantages since the parameters determining the strength of the interaction can be independently engineered. In this work, we report a proof-of-concept demonstration of a new approach to voltage-tune the coupling between ISTs in QWs and a plasmonic metasurface. In contrast to previous approaches, the IST strength is here modified via control of the electron populations in QWs located in the near field of the metasurface. By turning on and off the ISTs in the semiconductor QWs, we observe a modulation of the optical response of the IST coupled metasurface due to modulation of the coupled light-matter states. Because of the electrostatic design, our device exhibits an extremely low leakage current of ∼6 pA at a maximum operating bias of +1 V and therefore very low power dissipation. Our approach provides a new direction for designing voltage-tunable metasurface-based optical modulators.

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Improving the sensitivity of infrared detectors is an essential step for future applications, including satellite- and terrestrial-based systems. We investigate nanoantenna-enabled detectors (NEDs) in the infrared, where the nanoantenna arrays play a fundamental role in enhancing the level of absorption within the active material of a photodetector. The design and optimization of nanoantenna-enabled detectors via full-wave simulations is a challenging task given the large parameter space to be explored. Here, we present a fast and accurate fully analytic circuit model of patch-based NEDs. This model allows for the inclusion of real metals, realistic patch thicknesses, non-absorbing spacer layers, the active detector layer, and absorption due to higher-order evanescent modes of the metallic array. We apply the circuit model to the design of NED devices based on Type II superlattice absorbers, and show that we can achieve absorption of ∼70% of the incoming energy in subwavelength (∼λ∕5) absorber layers. The accuracy of the circuit model is verified against full-wave simulations, establishing this model as an efficient design tool to quickly and accurately optimize NED structures.

Considering the power constrained scaling of silicon complementary metal-oxide-semiconductor technology, the use of high mobility III-V compound semiconductors such as In0.53Ga0.47As in conjunction with high-κ dielectrics is becoming a promising option for future n-type metal-oxide-semiconductor field-effect-transistors. Development of low dissipation field-effect tunable III-V based photonic devices integrated with high-κ dielectrics is therefore very appealing from a technological perspective. In this work, we present an experimental realization of a monolithically integrable, field-effect-tunable, III-V hybrid metasurface operating at long-wave-infrared spectral bands. Our device relies on strong light-matter coupling between epsilon-near-zero (ENZ) modes of an ultra-thin In0.53Ga0.47As layer and the dipole resonances of a complementary plasmonic metasurface. The tuning mechanism of our device is based on field-effect modulation, where we modulate the coupling between the ENZ mode and the metasurface by modifying the carrier density in the ENZ layer using an external bias voltage. Modulating the bias voltage between ±2 V, we deplete and accumulate carriers in the ENZ layer, which result in spectrally tuning the eigenfrequency of the upper polariton branch at 13 μm by 480 nm and modulating the reflectance by 15%, all with leakage current densities less than 1 μA/cm2. Our wavelength scalable approach demonstrates the possibility of designing on-chip voltage-tunable filters compatible with III-V based focal plane arrays at mid- and long-wave-infrared wavelengths.

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All-dielectric metasurfaces, two-dimensional arrays of subwavelength low loss dielectric inclusions, can be used not only to control the amplitude and phase of optical beams, but also to generate new wavelengths through enhanced nonlinear optical processes that are free from some of the constraints dictated by the use of bulk materials. Recently, high quality factor (Q) resonances in these metasurfaces have been revealed and utilized for applications such as sensing and lasing. The origin of these resonances stems from the interference of two nanoresonator modes with vastly different Q. Here we show that nonlinear optical processes can be further enhanced by utilizing these high-Q resonances in broken symmetry all-dielectric metasurfaces. We study second harmonic generation from broken symmetry metasurfaces made from III-V semiconductors and observe nontrivial spectral shaping of second-harmonic and multifold efficiency enhancement induced by high field localization and enhancement inside the nanoresonators.

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We experimentally demonstrated an actively tunable optical filter that controls the amplitude of reflected long-wave-infrared light in two separate spectral regions concurrently. Our device exploits the dependence of the excitation energy of plasmons in a continuous and unpatterned sheet of graphene on the Fermi-level, which can be controlled via conventional electrostatic gating. The filter enables simultaneous modification of two distinct spectral bands whose positions are dictated by the device geometry and graphene plasmon dispersion. Within these bands, the reflected amplitude can be varied by over 15% and resonance positions can be shifted by over 90 cm-1. Electromagnetic simulations verify that tuning arises through coupling of incident light to graphene plasmons by a grating structure. Importantly, the tunable range is determined by a combination of graphene properties, device structure, and the surrounding dielectrics, which dictate the plasmon dispersion. Thus, the underlying design shown here isapplicable across a broad range of infrared frequencies.

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Metamaterials provide a means to tailor the spectral response of a surface. Given the periodic nature of the metamaterial, proper design of the unit cell requires intimate knowledge of the parameter space for each design variable. We present a detailed study of the parameter space surrounding vertical split-ring resonators and planar split-ring resonators, and demonstrate widening of the perfect absorption bandwidth based on the understanding of its parameter space.

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We use broken symmetry III-V semiconductor Fano metasurfaces to substantially improve the efficiency of second-harmonic generation (SHG) in the near infrared, compared to SHG obtained from metasurfaces created using symmetrical Mie resonators.

In this work, we experimentally demonstrate simultaneous occurrence of second-,third-, fourth-harmonic generation, sum-frequency generation, four-wave mixing and six-wave mixing processes in III-V semiconductor metasurfaces with spectra spanning from the UV to the near-IR.

We demonstrate active tuning of high-Q dielectric metasurfaces by embedding asymmetric silicon meta-atoms in liquid crystals, thus controlling the relative refractive index by heating. Spectral tuning of more than three resonance widths is achieved.

The manufacturing tolerances of a stencil-lithography variant, membrane projection lithography, were investigated. In the first part of this work, electron beam lithography was used to create stencils with a range of linewidths. These patterns were transferred into the stencil membrane and used to pattern metallic lines on vertical silicon faces. Only the largest lines, with a nominal width of 84 nm, were resolved, resulting in 45 ± 10 nm (average ± standard deviation) as deposited with 135-nm spacing. Although written in the e-beam write software file as 84-nm in width, the lines exhibited linewidth bias. This can largely be attributed to nonvertical sidewalls inherent to dry etching techniques that cause proportionally larger impact with decreasing feature size. The line edge roughness can be significantly attributed to the grain structure of the aluminum nitride stencil membrane. In the second part of this work, the spatial uniformity of optically defined (as opposed to e-beam written) metamaterial structures over large areas was assessed. A Fourier transform infrared spectrometer microscope was used to collect the reflection spectra of samples with optically defined vertical split ring from 25 spatially resolved 300 × 300 μm regions in a 1-cm2 area. The technique is shown to provide a qualitative measure of the uniformity of the inclusions.

This paper investigates three-dimensional cut wire pair (CWP) behavior in vertically oriented meta-atoms. We first analyze CWP metamaterial inclusions using full-wave electromagnetic simulations. The scattering behavior of the vertical CWP differs substantially from that of the planar version of the same structure. In particular, we show that the vertical CWP supports a magnetic resonance that is solely excited by the incident magnetic field. This is in stark contrast to the bianisotropic resonant excitation of in-plane CWPs. We further show that this CWP behavior can occur in other vertical metamaterial resonators, such as back-to-back linear dipoles and back-to-back split ring resonators (SRRs), due to the strong coupling between the closely spaced metallic elements in the back-to-back configuration. In the case of SRRs, the vertical CWP mode (unexplored in previous literature) can be excited with a magnetic field that is parallel to both SRR loops, and exists in addition to the familiar fundamental resonances of the individual SRRs. In order to fully describe the scattering behavior from such dense arrays of three-dimensional structures, coupling effects between the close-packed inclusions must be included. The new flexibility afforded by using vertical resonators allows us to controllably create purely electric inclusions, purely magnetic inclusions, as well as bianisotropic inclusions, and vastly increases the degrees of freedom for the design of metafilms.

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We examine integration of a patterned metal nanoantenna (or metasurface) directly onto long-wave infrared detectors. These structures show significantly improved external quantum efficiency compared to their traditional counterparts. We will show simulation and experimental results.

We experimentally demonstrate resonantly enhanced nonlinear optical processes such as 2nd-, 3rd-, and 4th-harmonic generations, sum-frequency generation, four-wave mixing processes, etc., in the visible and near-IR using GaAs dielectric metasurfaces.

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We demonstrate the active tuning of all-dielectric metasurfaces exhibiting high-quality factor (high-Q) resonances. The active control is provided by embedding the asymmetric silicon meta-atoms with liquid crystals, which allows the relative index of refraction to be controlled through heating. It is found that high quality factor resonances (Q = 270 ± 30) can be tuned over more than three resonance widths. Our results demonstrate the feasibility of using all-dielectric metasurfaces to construct tunable narrow-band filters.

Dielectric metasurfaces that exploit the different Mie resonances of nanoscale dielectric resonators are a powerful platform for manipulating electromagnetic fields and can provide novel optical behavior. In this work, we experimentally demonstrate independent tuning of the magnetic dipole resonances relative to the electric dipole resonances of split dielectric resonators (SDRs). By increasing the split dimension, we observe a blue shift of the magnetic dipole resonance toward the electric dipole resonance. Therefore, SDRs provide the ability to directly control the interaction between the two dipole resonances within the same resonator. For example, we achieve the first Kerker condition by spectrally overlapping the electric and magnetic dipole resonances and observe significantly suppressed backward scattering. Moreover, we show that a single SDR can be used as an optical nanoantenna that provides strong unidirectional emission from an electric dipole source.

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Ultrafast control of the polarization state of light may enable a plethora of applications in optics, chemistry and biology. However, conventional polarizing elements, such as polarizers and waveplates, are either static or possess only gigahertz switching speeds. Here, with the aid of high-mobility indium-doped cadmium oxide (CdO) as the gateway plasmonic material, we realize a high-quality factor Berreman-type perfect absorber at a wavelength of 2.08 μm. On sub-bandgap optical pumping, the perfect absorption resonance strongly redshifts because of the transient increase of the ensemble-averaged effective electron mass of CdO, which leads to an absolute change in the p-polarized reflectance from 1.0 to 86.3%. By combining the exceedingly high modulation depth with the polarization selectivity of the perfect absorber, we experimentally demonstrate a reflective polarizer with a polarization extinction ratio of 91 that can be switched on and off within 800 fs.

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Three-dimensional (3D) metafilms composed of periodic arrays of silicon unit cells containing single and multiple micrometer-scale vertical split ring resonators (SRRs) per unit cell were fabricated. In contrast to planar and stacked planar structures, these 3D metafilms have a thickness t ∼ λd/4, allowing for classical thin film effects in the long wavelength limit. The infrared specular far-field scattering response was measured for metafilms containing one and two resonators per unit cell and compared to numerical simulations. Excellent agreement in the frequency region below the onset of diffractive scattering was obtained. For dense arrays of unit cells containing single SRRs, normally incident linearly polarized plane waves which do not excite a resonant response result in thin film interference fringes in the reflected spectra and are virtually indistinguishable from the scattering response of an undecorated array of unit cells. For the resonant linear polarization, the specular reflection for arrays is highly dependent on the SRR orientation on the vertical face for gap-up, gap-down, and gap-right orientations. For dense arrays of unit cells containing two SRRs per unit cell positioned on adjacent faces, the specular reflection spectra are slightly modified due to near-field coupling between the orthogonally oriented SRRs but otherwise exhibit reflection spectra largely representative of the corresponding single-SRR unit cell structures. The ability to pack the unit cell with multiple inclusions which can be independently excited by choice of incident polarization suggests the construction of dual-channel films where the scattering response is selected by altering the incident polarization.

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We demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron− phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. The platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.

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Using III-V dielectric metasurfaces, we experimentally demonstrate resonantly enhanced harmonic generations up to the 4th order. Moreover, we observe large enhancements and spectral tailoring of the photoluminescence of quantum dots embedded inside dielectric metasurfaces. © OSA 2017.

We present a new approach to dielectric metasurface design that relies on a single resonator per unit cell and produces robust, high quality factor Fano resonances. Our approach utilizes symmetry breaking of highly symmetric resonator geometries, such as cubes, to induce couplings between the otherwise orthogonal resonator modes. In particular, we design perturbations that couple "bright" dipole modes to "dark" dipole modes whose radiative decay is suppressed by local field effects in the array. Our approach is widely scalable from the near-infrared to radio frequencies. We first unravel the Fano resonance behavior through numerical simulations of a germanium resonator-based metasurface that achieves a quality factor of ∼1300 at ∼10.8 μm. Then, we present two experimental demonstrations operating in the near-infrared (∼1 μm): a silicon-based implementation that achieves a quality factor of ∼350; and a gallium arsenide-based structure that achieves a quality factor of ∼600, the highest near-infrared quality factor experimentally demonstrated to date with this kind of metasurface. Importantly, large electromagnetic field enhancements appear within the resonators at the Fano resonant frequencies. We envision that combining high quality factor, high field enhancement resonances with nonlinear and active/gain materials such as gallium arsenide will lead to new classes of active optical devices.

We present all-dielectric 2D and 3D metamaterials that are monolithically fabricated from III-V semiconductor nanostructures. The active/gain and high optical nonlinearity properties of the metamaterials can lead to new classes of active devices.

We experimentally observe large enhancement of second-harmonic generation (SHG) from GaAs metasurfaces. The SHG polarization when excited at the electric and magnetic dipole resonances is orthogonal and can be attributed to different nonlinear generation mechanisms.

The development of novel thermal sources that control the emission spectrum and the angular emission pattern is of fundamental importance. In this paper, we investigate the thermal emission properties of semiconductor hyperbolic metamaterials (SHMs). Our structure does not require the use of any periodic corrugation to provide monochromatic and directional emission properties. We show that these properties arise because of epsilon-near-zero conditions in SHMs. The thermal emission is dominated by the epsilon-near-zero effect in the doped quantum wells composing the SHM. Furthermore, different properties are observed for s and p polarizations, following the characteristics of the strong anisotropy of hyperbolic metamaterials.

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Metamaterial dielectric resonators represent a promising path toward low-loss metamaterials at optical frequencies. In this paper we utilize perturbations of high symmetry resonator geometries, such as cubes, either to overlap the electric and magnetic dipole resonances, thereby enabling directional scattering and Huygens' metasurfaces, or to induce couplings between the otherwise orthogonal resonator modes to achieve high-quality factor Fano resonances. Our results are fully scalable across any frequency bands where high-permittivity dielectric materials are available, including microwave, THz, and infrared frequencies.

Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scale renders phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using gallium arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 104 relative to unpatterned GaAs. At the magnetic dipole resonance, we measure an absolute nonlinear conversion efficiency of ∼2 × 10-5 with ∼3.4 GW/cm2 pump intensity. The polarization properties of the SHG reveal that both bulk and surface nonlinearities play important roles in the observed nonlinear process.

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Epsilon-near-zero (ENZ) modes arising from condensed-matter excitations such as phonons and plasmons are a new path for tailoring light-matter interactions at the nanoscale. Complex spectral shaping can be achieved by creating such modes in nanoscale semiconductor layers and controlling their interaction with multiple, distinct, dipole resonant systems. Examples of this behavior are presented at midinfrared frequencies for ENZ modes that are strongly coupled to metamaterial resonators and simultaneously strongly coupled to semiconductor phonons or quantum-well intersubband transitions (ISTs), resulting in double- and triple-polariton branches in transmission spectra. For the double-polariton branch case, we find that the best strategy to maximize the Rabi splitting is to use a combination of a doped layer supporting an ENZ feature and a layer supporting ISTs, with overlapping ENZ and IST frequencies. This design flexibility renders this platform attractive for low-voltage tunable filters, light-emitting diodes, and efficient nonlinear composite materials.

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QD-solids comprising self-assembled semiconductor nanocrystals such as CdSe are currently under investigation for use in a wide array of applications including light emitting diodes, solar cells, field effect transistors, photodetectors, and biosensors. The goal of this LDRD project was develop a fundamental understanding of the relationship between nanoparticle interactions and the different regimes of charge and energy transport in semiconductor quantum dot (QD) solids. Interparticle spacing was tuned through the application of hydrostatic pressure in a diamond anvil cell, and the impact on interparticle interactions was probed using x-ray scattering and a variety of static and transient optical spectroscopies. During the course of this LDRD, we discovered a new, previously unknown, route to synthesize semiconductor quantum wires using high pressure sintering of self-assembled quantum dot crystals. We believe that this new, pressure driven synthesis approach holds great potential as a new tool for nanomaterials synthesis and engineering.

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Coherent superposition of light from subwavelength sources is an attractive prospect for the manipulation of the direction, shape and polarization of optical beams. This phenomenon constitutes the basis of phased arrays, commonly used at microwave and radio frequencies. Here we propose a new concept for phased-array sources at infrared frequencies based on metamaterial nanocavities coupled to a highly nonlinear semiconductor heterostructure. Optical pumping of the nanocavity induces a localized, phase-locked, nonlinear resonant polarization that acts as a source feed for a higher-order resonance of the nanocavity. Varying the nanocavity design enables the production of beams with arbitrary shape and polarization. As an example, we demonstrate two second harmonic phased-array sources that perform two optical functions at the second harmonic wavelength (∼5μm): a beam splitter and a polarizing beam splitter. Proper design of the nanocavity and nonlinear heterostructure will enable such phased arrays to span most of the infrared spectrum.

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We use epsilon-near-zero modes in semiconductor nanolayers to design a system whose spectral properties are controlled by their interaction with multi-dipole resonances. This design flexibility renders our platform attractive for efficient nonlinear composite materials. © OSA 2015.

We demonstrate efficient third harmonic generation from a 21.6nm-thick indium tin oxide film on glass substrate for a pump fundamental wavelength of 1350nm using the field enhancement properties of optical modes supported by epsilon-near-zero media. © OSA 2015.

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We experimentally demonstrate efficient third harmonic generation from an indium tin oxide nanofilm (λ/42 thick) on a glass substrate for a pump wavelength of 1.4 μm. A conversion efficiency of 3.3 × 10-6 is achieved by exploiting the field enhancement properties of the epsilon-near-zero mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.

Metallic nanocavities with deep subwavelength mode volumes can lead to dramatic changes in the behavior of emitters placed in their vicinity. This collocation and interaction often leads to strong coupling. Here, we present for the first time experimental evidence that the Rabi splitting is directly proportional to the electrostatic capacitance associated with the metallic nanocavity. The system analyzed consists of different metamaterial geometries with the same resonance wavelength coupled to intersubband transitions in quantum wells.

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In this article, a negative-index metamaterial prism based on a composite unit cell containing a split-ring resonator and a z-dipole is designed and simulated. The design approach combines simulations of a single unit cell to identify the appropriate cell design (yielding the desired negative-index behavior) together with subcell modeling (which simplifies the mesh representation of the resonator geometry and allows for a larger number of resonator cells to be handled). In addition to describing the methodology used to design a n = -1 refractive index prism, results including the effective-medium parameters, the far-field scattered patterns, and the near-zone field distributions corresponding to a normally incident plane-wave excitation of the prism are presented.

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We employ both the effective medium approximation (EMA) and Bloch theory to compare the dispersion properties of semiconductor hyperbolic metamaterials (SHMs) at mid-infrared frequencies and metallic hyperbolic metamaterials (MHMs) at visible frequencies. This analysis reveals the conditions under which the EMA can be safely applied for both MHMs and SHMs. We find that the combination of precise nanoscale layering and the longer infrared operating wavelengths puts the SHMs well within the effective medium limit and, in contrast to MHMs, allows for the attainment of very high photon momentum states. In addition, SHMs allow for new phenomena such as ultrafast creation of the hyperbolic manifold through optical pumping. In particular, we examine the possibility of achieving ultrafast topological transitions through optical pumping which can photo-dope appropriately designed quantum wells on the femtosecond time scale.

Ultrafast optical excitation of photocarriers has the potential to transform undoped semiconductor superlattices into semiconductor hyperbolic metamaterials (SHMs). In this paper, we investigate the optical properties associated with such ultrafast topological transitions. We first show reflectance, transmittance, and absorption under TE and TM plane wave incidence. In the unpumped state, the superlattice exhibits a frequency region with high reflectance (>80%) and a region with low reflectance (<1%) for both TE and TM polarizations over a wide range of incidence angles. In contrast, in the photopumped state, the reflectance for both frequencies and polarizations is very low (<1%) for a similar range of angles. Interestingly, this system can function as an all-optical reflection switch on ultrafast timescales. Furthermore, for TM incidence and close to the epsilon-near-zero point of the longitudinal permittivity, directional perfect absorption on ultrafast timescales may also be achieved. Finally, we discuss the onset of negative refraction in the photopumped state.

We present an electrodynamic model of strongly coupled metamaterial/intersubband-transition systems that can be used to predict and maximize Rabi splittings. This model can also be used to optimize metamaterial structures that enhance second-order nonlinear processes.

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We experimentally demonstrate single beam directional perfect absorption (to within experimental accuracy) of p-polarized light in the near-infrared using unpatterned, deep subwavelength films of indium tin oxide (ITO) on Ag. The experimental perfect absorption occurs slightly above the epsilon-near-zero (ENZ) frequency of ITO, where the permittivity is less than 1 in magnitude. Remarkably, we obtain perfect absorption for films whose thickness is as low as ∼1/50th of the operating free-space wavelength and whose single pass attenuation is only ∼5%. We further derive simple analytical conditions for perfect absorption in the subwavelength-film regime that reveal the constraints that the thin layer permittivity must satisfy if perfect absorption is to be achieved. Then, to get a physical insight on the perfect absorption properties, we analyze the eigenmodes of the layered structure by computing both the real-frequency/complex-wavenumber and the complex-frequency/real-wavenumber modal dispersion diagrams. These analyses allow us to attribute the experimental perfect absorption condition to the crossover between bound and leaky behavior of one eigenmode of the layered structure. Both modal methods show that perfect absorption occurs at a frequency slightly larger than the ENZ frequency, in agreement with experimental results, and both methods predict a second perfect absorption condition at higher frequencies, attributed to another crossover between bound and leaky behavior of the same eigenmode. Our results greatly expand the list of materials that can be considered for use as ultrathin perfect absorbers and provide a methodology for the design of absorbing systems at any desired frequency. © 2014 American Physical Society.

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The reflection of an optical wave from metal, arising from strong interactions between the optical electric field and the free carriers of the metal, is accompanied by a phase reversal of the reflected electric field. A far less common route to achieving high reflectivity exploits strong interactions between the material and the optical magnetic field to produce a “magnetic mirror” that does not reverse the phase of the reflected electric field. At optical frequencies, the magnetic properties required for strong interaction can be achieved only by using artificially tailored materials. Here, we experimentally demonstrate, for the first time to the best of our knowledge, the magnetic mirror behavior of a low-loss all-dielectric metasurface at infrared optical frequencies through direct measurements of the phase and amplitude of the reflected optical wave. The enhanced absorption and emission of transverse-electric dipoles placed close to magnetic mirrors can lead to exciting new advances in sensors, photodetectors, and light sources.

Microalgae have been identified as a promising renewable feedstock for production of lipids for feeds and fuels. Current methods for identifying algae strains and growth conditions that support high lipid production require a variety of fluorescent chemical indicators, such as Nile Red and more recently, Bodipy. Despite notable successes using these approaches, chemical indicators exhibit several drawbacks, including non-uniform staining, low lipid specificity, cellular toxicity, and variable permeability based on cell-type, limiting their applicability for high-throughput bioprospecting. In this work, we used in vivo hyperspectral confocal fluorescence microscopy of a variety of potential microalgae production strains (Nannochloropsis sp., Dunaliella salina, Neochloris oleoabundans, and Chlamydomonas reinhardtii) to identify a label-free method for localizing lipid bodies and quantifying the lipid yield on a single-cell basis. By analyzing endogenous fluorescence from chlorophyll and resonance Raman emission from lipid-solubilized carotenoids we deconvolved pure component emission spectra and generated diffraction limited projections of the lipid bodies and chloroplast organelles, respectively. Applying this imaging method to nutrient depletion time-courses from lab-scale and outdoor cultivation systems revealed an additional autofluorescence spectral component that became more prominent over time, and varied inversely with the chlorophyll intensity, indicative of physiological compromise of the algal cell. This signal could result in false-positives for conventional measurements of lipid accumulation (via spectral overlap with Nile Red), however, the additional spectral feature was found to be useful for classification of lipid enrichment and culture crash conditions in the outdoor cultivation system. Under nutrient deprivation, increases in the lipid fraction of the cellular volume of ~. 500% were observed, as well as a correlated decrease in the chloroplast fraction of the total cellular volume. The results suggest that a membrane recycling mechanism dominates for nutrient deprivation-based lipid accumulation in the microalgae tested.

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