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Analysis of multilayer devices for superconducting electronics by high-resolution scanning transmission electron microscopy and energy dispersive spectroscopy

IEEE Transactions on Applied Superconductivity

Missert, Nancy A.; Kotula, Paul G.; Rye, Michael J.; Rehm, Laura; Sluka, Volker; Kent, Andrew D.; Yohannes, Daniel; Kirichenko, Alex F.; Vernik, Igor V.; Mukhanov, Oleg A.; Bolkhovsky, Vladimir; Wynn, Alex; Johnson, Leonard; Gouker, Mark

A focused ion beam was used to obtain cross-sectional specimens from both magnetic multilayer and Nb/Al-AlOx/Nb Josephson junction devices for characterization by scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDX). Automated multivariate statistical analysis of the EDX spectral images produced chemically unique component images of individual layers within the multilayer structures. STEM imaging elucidated distinct variations in film morphology, interface quality, and/or etch artifacts that could be correlated to magnetic and/or electrical properties measured on the same devices.

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TYPE Journal Article YEAR 2017
ScopusOSTIDOI

A quantitative method for measuring remaining silicon thickness during XeF2 FIB trenching for backside circuit operations

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Salazar, Gregory P.; Shul, Randy J.; Ball, S.N.; Rye, Michael J.; Phillips, B.S.; DiBattista, M.; Silverman, S.

Backside circuit edit (CE) remains a crucial failure analysis (FA) capability, enabling design modifications on advanced integrated circuits.1-9 A key requirement of this activity is to approach the active transistor layer of the silicon through the removal of the silicon substrate without exposing or damaging critical transistor features. Several methods have been previously developed to enable or assist with the process with either global or locally targeted techniques for thinning the silicon substrate. These methods employ mechanical methods, laser based techniques (continuous or pulsed), or chemical assisted focused ion beam (FIB) etching to ac.complish the thinning. Each of these methods presents different strengths and weaknesses, from their reliability to .complexity, but very few techniques provide a precise and accurate quantitative measure of the remaining silicon thickness (RST). Here, we will discuss the use of a FIB with XeF2 for backside Si removal, and the development of an in-situ, accurate measurement of RST.

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TYPE Conference Poster YEAR 2017
ScopusOSTI

Advanced Characterization: 3D chemistry and structure at sub-nm resolution

Kotula, Paul G.; Rye, Michael J.

This work has started the process of extending nanometer-scale comprehensive microanalysis to the 3rd dimension by combining full x-ray spectral imaging with previously developed computed tomography techniques whereby we acquire a series of spectral images for a large number of projections of the same specimen in the transmission electron microscope and then analyze the composite computed tomographic spectral image data prior to application of existing tomographic reconstruction software. We have demonstrated a needle-shaped specimen geometry (shape/size and preparation method) by focused ion beam preparation and acquisition and analysis of a complete tomographic spectral image on a test material consisting of fine-grained Ni with sub-10 nm alumina particles.

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TYPE Other Report YEAR 2014
OSTIDOI
Results 1–25 of 41
Results 1–25 of 41