Publications

This work demonstrated both NbN and Nb make good electrodes for stabilizing orthorhombic phase of Hf_0.6Zr_0.4O₂ ferroelectric films. Wake up are < 100 cycles. P_r can be as high as 30 µC/cm² - respectively 14 and 18 µC/cm² here. Further, capacitance suggests an orthorhombic phase can be stabilized. Addition of a linear dielectric under modest thickness can tune the P_r and reduce leakage.

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Ferroelectric phase stability in hafnium oxide is reported to be influenced by factors that include composition, biaxial stress, crystallite size, and oxygen vacancies. In the present work, the ferroelectric performance of atomic layer deposited Hf0.5Zr0.5O2 (HZO) prepared between TaN electrodes that are processed under conditions to induce variable biaxial stresses is evaluated. The post-processing stress states of the HZO films reveal no dependence on the as-deposited stress of the adjacent TaN electrodes. All HZO films maintain tensile biaxial stress following processing, the magnitude of which is not observed to strongly influence the polarization response. Subsequent composition measurements of stress-varied TaN electrodes reveal changes in stoichiometry related to the different preparation conditions. HZO films in contact with Ta-rich TaN electrodes exhibit higher remanent polarizations and increased ferroelectric phase fractions compared to those in contact with N-rich TaN electrodes. HZO films in contact with Ta-rich TaN electrodes also have higher oxygen vacancy concentrations, indicating that a chemical interaction between the TaN and HZO layers ultimately impacts the ferroelectric orthorhombic phase stability and polarization performance. The results of this work demonstrate a necessity to carefully consider the role of electrode processing and chemistry on performance of ferroelectric hafnia films.

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Surface acoustic wave devices have been fabricated on a GaAs 100 substrate to demonstrate the capability of 2D Raman microscopy as an imaging technique for acoustic waves on the surface of a piezoelectric substrate. Surface acoustic waves are generated using a two-port interdigitated transducer platform, which is modified to produce surface standing waves. We have derived an analytical model to relate Raman peak broadening to the near-surface strain field of the GaAs surface produced by the surface acoustic waves. Atomic force microscopy is used to confirm the presence of a standing acoustic wave, resolving a total vertical displacement of 3 nm at the antinode of the standing wave. Stress calculations are performed for both imaging techniques and are in good agreement, demonstrating the potential of this Raman analysis.

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Composition dependence of second harmonic generation, refractive index, extinction coefficient, and optical bandgap in 20 nm thick crystalline Hf1-xZrxO2 (0 ≤ x ≤ 1) thin films is reported. The refractive index exhibits a general increase with increasing ZrO2 content with all values within the range of 1.98-2.14 from 880 nm to 400 nm wavelengths. A composition dependence of the indirect optical bandgap is observed, decreasing from 5.81 eV for HfO2 to 5.17 eV for Hf0.4Zr0.6O2. The bandgap increases for compositions with x > 0.6, reaching 5.31 eV for Hf0.1Zr0.9O2. Second harmonic signals are measured for 880 nm incident light. The magnitude of the second harmonic signal scales with the magnitude of the remanant polarization in the composition series. Film compositions that display near zero remanent polarizations exhibit minimal second harmonic generation while those with maximum remanent polarization also display the largest second harmonic signal. The results are discussed in the context of ferroelectric phase assemblage in the hafnium zirconium oxide films and demonstrate a path toward a silicon-compatible integrated nonlinear optical material.

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In this study we examine a split-foundry multilevel application specific integrated circuit (ASIC) Si-interposer and die bonded using the direct bond interface (DBI) process, in addition to shortloop vehicles. The designs have been subject to relaxed pattern density rules, and exhibit chemical mechanical planarization (CMP) systematic process issues of varying degrees. We find that the interconnect formation is robust against moderate dielectric thickness variation, as well as a moderate degree of copper corrosion. We discuss and demonstrate various CMP methods which have a clear and repeatable impact. Pattern density effects and defectivity on the bond quality are examined using focused ion beam scanning electron microscope (FIB-SEM) images at the feature scale (sub 100 um) and intra-die scale (few mm). Impact to the CMP performance, including plug recess, and defectivity are discussed.

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In a previous paper, we described a new abstract circuit model for reversible computation called asynchronous ballistic reversible computing (ABRC), in which localized information-bearing pulses propagate ballistically along signal paths between stateful abstract devices and elastically scatter off those devices serially, while updating the device state in a logically-reversible and deterministic fashion. The ABRC model has been shown to be capable of universal computation. In the research reported here, we begin exploring how the ABRC model might be realized in practice using single flux quantum solitons (fluxons) in superconducting Josephson junction (JJ) circuits. One natural family of realizations could utilize fluxon polarity to represent binary data in individual pulses propagating near-ballistically, along discrete or continuous long Josephson junctions or microstrip passive transmission lines, and utilize the flux charge (-1, 0, +1) of a JJ-containing superconducting loop with Φ0 < IcL < 2Φ0 to encode a ternary state variable internal to a device. A natural question then arises as to which of the definable abstract ABRC device functionalities using this data representation might be implementable using a JJ circuit that dissipates only a small fraction of the input fluxon energy. We discuss conservation rules and symmetries considered as constraints to be obeyed in these circuits, and begin the process of classifying the possible ABRC devices in this family having up to three bidirectional I/O terminals, and up to three internal states.

We report on the fabrication and characterization of Nb/Ta-N/Nb Josephson junctions grown by room temperature magnetron sputtering on 150-mm diameter Si wafers. Junction characteristics depend upon the Ta-N barrier composition, which was varied by adjusting the N2 flow during film deposition. Higher N2 flow rates raise the barrier resistance and increase the junction critical current. This work demonstrates the viability of Ta-N as an alternative barrier to aluminum oxide, with the potential for large scale integration.

We measure the frequency dependence of a niobium microstrip resonator as a function of temperature from 1.4 to 8.4 K. In a 2-micrometer-wide half-wave resonator, we find the frequency of resonance changes by a factor of 7 over this temperature range. From the resonant frequencies, we extract inductance per unit length, characteristic impedance, and propagation velocity (group velocity). We discuss how these results relate to superconducting electronics. Over the 2 K to 6 K temperature range where superconducting electronic circuits operate, inductance shows a 19% change and both impedance and propagation velocity show an 11% change.

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