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Processing, structure, and thermal properties of ZrW2O8, HfW2O8, HfMgW3O12, Al(HfMg)0.5W3O12, and Al0.5Sc1.5W3O12 negative and zero thermal expansion coefficient ceramics

Bishop, Sean R.; Lowry, Daniel R.; Peretti, Amanda S.; Blea-Kirby, Mia A.; Salinas, Perla A.; Coker, Eric N.; Arata, Edward R.; Rodriguez, Mark A.; Murray, Shannon E.; Mahaffey, Jacob T.; Biedermann, Laura B.

Negative and zero coefficient of thermal expansion (CTE) materials are of interest for developing polymer composites in electronic circuits that match the expansion of Si and in zero CTE supports for optical components, e.g., mirrors. In this work, the processing challenges and stability of ZrW2O8, HfW2O8, HfMgW3O12, Al(HfMg)0.5W3O12, and Al0.5Sc1.5W3O12 negative and zero thermal expansion coefficient ceramics are discussed. Al0.5Sc1.5W3O12 is demonstrated to be a relatively simple oxide to fabricate in large quantity and is shown to exhibit single phase up to 1300 °C in air and inert N2 environments. The negative and zero CTE behavior was confirmed with dilatometry. Thermal conductivity and heat capacity were reported for the first time for HfMgW3O12 and Al0.5Sc1.5W3O12 and thermal conductivity was found to be very low (~0.5 W/mK). Grüneisen parameter is also estimated. Methods for integration of Al0.5Sc1.5W3O12 with other materials was examined and embedding 50 vol% of the ceramic powder in flexible epoxy was demonstrated with a commercial vendor.

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Phonon scattering mechanisms dictating the thermal conductivity of lead zirconate titanate (PbZr1-xTixO3) thin films across the compositional phase diagram

Journal of Applied Physics

Foley, Brian M.; Paisley, Elizabeth A.; DiAntonio, Christopher D.; Chavez, Tom C.; Blea-Kirby, Mia A.; Brennecka, Geoffrey L.; Gaskins, John T.; Ihlefeld, Jon I.; Hopkins, Patrick E.

This work represents a thorough investigation of the thermal conductivity (κ) in both thin film and bulk PbZr1-xTixO3 (PZT) across the compositional phase diagram. Given the technological importance of PZT as a superb piezoelectric and ferroelectric material in devices and systems impacting a wide array of industries, this research serves to fill the gap in knowledge regarding the thermal properties. The thermal conductivities of both thin film and bulk PZT are found to vary by a considerable margin as a function of composition x. Additionally, we observe a discontinuity in κ in the vicinity of the morphotropic phase boundary (MPB, x = 0.48) where there is a 20%-25% decrease in κ in our thin film data, similar to that found in literature data for bulk PZT. The comparison between bulk and thin film materials highlights the sensitivity of κ to size effects such as film thickness and grain size even in disordered alloy/solid-solution materials. A model for the thermal conductivity of PZT as a function of composition (κ (x)) is presented, which enables the application of the virtual crystal approximation for alloy-type material systems with very different crystals structures, resulting in differing temperature trends for κ. We show that in the case of crystalline solid-solutions where the thermal conductivity of one of the parent materials exhibits glass-like temperature trends the compositional dependence of thermal conductivity is relatively constant for most values of x. This is in stark contrast with the typical trends of thermal conductivity with x in alloys, where the thermal conductivity increases dramatically as the composition of the alloy or solid-solution approaches that of a pure parent materials (i.e., as x = 0 or 1).

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Thermal transport in tantalum oxide films for memristive applications

Applied Physics Letters

Landon, Colin D.; Wilke, Rudeger H.T.; Brumbach, Michael T.; Brennecka, Geoffrey L.; Blea-Kirby, Mia A.; Ihlefeld, Jon I.; Marinella, Matthew J.; Beechem, Thomas E.

The thermal conductivity of amorphous TaOx memristive films having variable oxygen content is measured using time domain thermoreflectance. Thermal transport is described by a two-part model where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. The vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaOx switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.

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29 Results
29 Results