Determination of the photoelastic constants of silicon nitride using piezo-optomechanical photonic integrated circuits and laser Doppler vibrometry
Abstract not provided.
Publications
Acoustoelectric Surface Acoustic Wave Switch in An Epitaxial Ingaas on Lithium Niobate Heterostructure
21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
This work presents a 3-Port acoustoelectric switch design for surface acoustic wave signal processing. Using a multistrip coupler, the input acoustic wave at Port 1 is split into two parallel and electrically cross-linked acoustoelectric delay lines where an applied voltage can alter the gain and attenuation in each delay line based on the voltage polarity. The switch is demonstrated using a 270 MHz Leaky SAW mode on an InGaAs on 41° Y-cut lithium niobate heterostructure. Applying a +40 V voltage pulse results in an IL of -12.5 dB and -57.5 dB in the gain and isolation switch paths, respectively. This leads to a 45 dB difference in signal strength at the output ports.
Active Nonreciprocal and Nonlinear Surface Acoustic Wave Devices in a Heterogeneously Integrated InGaAs on Lithium Niobate Material Platform
Abstract not provided.
3 Results