Publications

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This talk will discuss recent work on photonic integration for applications in optical signal processing, digital logic, and fundamental device research with an emphasis on InP-based photonic integrated circuit technology. © 2015 OSA.

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We present a filter consisting of cascaded ring resonators with integrated SOAs. The filter demonstrates an extinction ratio >30 dB, a free spectral range of 56 GHz and a FWHM bandwidth of 3 GHz. © 2010 Optical Society of America.

We present a photonic integrated circuit (PIC) composed of two strongly coupled distributed Bragg reflector (DBR) lasers. This PIC utilizes the dynamics of mutual injection locking to increase the relaxation resonance frequency from 3 GHz to beyond 30 GHz. Mutual injection-locking and external injection-locking operation are compared. © 2011 IEEE.

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InP substrates form the starting point for a wide variety of semiconductor devices. The surface morphology produced during epitaxy depends critically on the starting substrate. We evaluated (1 0 0)-oriented InP wafers from three different vendors by growing thick (5 μm) lattice-matched epilayers of InP, GaInAs, and AlInAs. We assessed the surfaces with differential interference contrast microscopy and atomic force microscopy. Wafers with near singular (1 0 0) orientations produced inferior surfaces in general. Vicinal substrates with small misorientations improved the epitaxial surface for InP dramatically, reducing the density of macroscopic defects while maintaining a low RMS roughness. GaInAs and AlInAs epitaxy step-bunched forming undulations along the miscut direction. Sulfur-doped wafers were considered for singular (1 0 0) and for 0.2° misorientation toward (1 1 0). We found that mound defects observed for InP and GaInAs layers on iron-doped singular wafers were absent for singular sulfur-doped wafers. These observations support the conclusion that dislocation termination at the surface and expansion of the step spiral lead to the macroscopic defects observed. © 2010 Elsevier B.V.

We present a filter consisting of cascaded ring resonators with integrated SOAs. The filter demonstrates an extinction ratio ≥30 dB, a free spectral range of 56 GHz and a FWHM bandwidth of 3 GHz. © 2011 Optical Society of America.

We demonstrate an optical gate architecture with optical isolation between input and output using interconnected PD-EAMs to perform AND and NOT functions. Waveforms for 10 Gbps AND and 40 Gbps NOT gates are shown. © 2010 Optical Society of America.

We present the bandwidth enhancement of an EAM monolithically integrated with two mutually injection-locked lasers. An improvement in the modulation efficiency and bandwidth are shown with mutual injection locking.

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We present a photonic integrated circuit (PIC) composed of two strongly coupled lasers. This PIC utilizes the dynamics of mutual injection locking to increase the relaxation resonance frequency from 3 GHz to beyond 30 GHz.

This report summarizes a 3-year LDRD program at Sandia National Laboratories exploring mutual injection locking of composite-cavity lasers for enhanced modulation responses. The program focused on developing a fundamental understanding of the frequency enhancement previously demonstrated for optically injection locked lasers. This was then applied to the development of a theoretical description of strongly coupled laser microsystems. This understanding was validated experimentally with a novel 'photonic lab bench on a chip'.

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We present the bandwidth enhancement of an EAM monolithically integrated with two mutually injection-locked lasers. An improvement in the modulation efficiency and bandwidth are shown with mutual injection locking.

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We demonstrate an optical gate architecture using electro-absorption modulator/photodiode pairs to perform AND and NOT functions. Optical bandwidth for both gates reach 40 GHz. Also shown are AND gate waveforms at 40 Gbps.

We demonstrate the operation of low-power reflective S-SEEDs with 6-ps switching times at a 2-Volt bias. Efficient refractive micro-optics are used to optically interconnect multiple S-SEED gates. The technology platform is expected to enable dense photonic logic circuits for high-speed telecommunications-related applications. © 2009 IEEE.

We describe recent advances in the development of 1550-nm symmetric self-electrooptic effect devices (S-SEEDs). S-SEEDs are semiconductor optoelectronic devices used to implement ultrafast all-optical logic functions: for optical fiber communication applications. In this paper, basic S-SEED operation is described, followed by a detailed explanation of the optimization techniques used to improve DC and high-speed performance in these long wavelength devices. Both epitaxial strain and quantum well design are shown to be important for S-SEEDs grown in the InAlGaAs quaternary material system. The device fabrication approach is outlined, and DC electrical and optical performance is discussed. Finally, we describe the high-speed optoelectronic measurements used to determine S-SEED switching characteristics. The devices described herein are the first known S-SEEDs to operate at telecommunications- compatible wavelengths and demonstrate record switching speeds with rail-to-rail switching rates faster than 6 picoseconds. © The Electrochemical Society.

This report summarizes a 3-month program that explored the potential areas of impact for electronic/photonic integration technologies, as applied to next-generation data processing systems operating within 100+ Gb/s optical networks. The study included a technology review that targeted three key functions of data processing systems, namely receive/demultiplexing/clock recovery, data processing, and transmit/multiplexing. Various technical approaches were described and evaluated. In addition, we initiated the development of high-speed photodetectors and hybrid integration processes, two key elements of an ultrafast data processor. Relevant experimental results are described herein.

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