Publications

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This talk will discuss recent work on photonic integration for applications in optical signal processing, digital logic, and fundamental device research with an emphasis on InP-based photonic integrated circuit technology. © 2015 OSA.

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We present a filter consisting of cascaded ring resonators with integrated SOAs. The filter demonstrates an extinction ratio >30 dB, a free spectral range of 56 GHz and a FWHM bandwidth of 3 GHz. © 2010 Optical Society of America.

We present a photonic integrated circuit (PIC) composed of two strongly coupled distributed Bragg reflector (DBR) lasers. This PIC utilizes the dynamics of mutual injection locking to increase the relaxation resonance frequency from 3 GHz to beyond 30 GHz. Mutual injection-locking and external injection-locking operation are compared. © 2011 IEEE.

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InP substrates form the starting point for a wide variety of semiconductor devices. The surface morphology produced during epitaxy depends critically on the starting substrate. We evaluated (1 0 0)-oriented InP wafers from three different vendors by growing thick (5 μm) lattice-matched epilayers of InP, GaInAs, and AlInAs. We assessed the surfaces with differential interference contrast microscopy and atomic force microscopy. Wafers with near singular (1 0 0) orientations produced inferior surfaces in general. Vicinal substrates with small misorientations improved the epitaxial surface for InP dramatically, reducing the density of macroscopic defects while maintaining a low RMS roughness. GaInAs and AlInAs epitaxy step-bunched forming undulations along the miscut direction. Sulfur-doped wafers were considered for singular (1 0 0) and for 0.2° misorientation toward (1 1 0). We found that mound defects observed for InP and GaInAs layers on iron-doped singular wafers were absent for singular sulfur-doped wafers. These observations support the conclusion that dislocation termination at the surface and expansion of the step spiral lead to the macroscopic defects observed. © 2010 Elsevier B.V.

We present a filter consisting of cascaded ring resonators with integrated SOAs. The filter demonstrates an extinction ratio ≥30 dB, a free spectral range of 56 GHz and a FWHM bandwidth of 3 GHz. © 2011 Optical Society of America.

We demonstrate an optical gate architecture with optical isolation between input and output using interconnected PD-EAMs to perform AND and NOT functions. Waveforms for 10 Gbps AND and 40 Gbps NOT gates are shown. © 2010 Optical Society of America.

We present the bandwidth enhancement of an EAM monolithically integrated with two mutually injection-locked lasers. An improvement in the modulation efficiency and bandwidth are shown with mutual injection locking.

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We present a photonic integrated circuit (PIC) composed of two strongly coupled lasers. This PIC utilizes the dynamics of mutual injection locking to increase the relaxation resonance frequency from 3 GHz to beyond 30 GHz.

This report summarizes a 3-year LDRD program at Sandia National Laboratories exploring mutual injection locking of composite-cavity lasers for enhanced modulation responses. The program focused on developing a fundamental understanding of the frequency enhancement previously demonstrated for optically injection locked lasers. This was then applied to the development of a theoretical description of strongly coupled laser microsystems. This understanding was validated experimentally with a novel 'photonic lab bench on a chip'.

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We present the bandwidth enhancement of an EAM monolithically integrated with two mutually injection-locked lasers. An improvement in the modulation efficiency and bandwidth are shown with mutual injection locking.

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We demonstrate an optical gate architecture using electro-absorption modulator/photodiode pairs to perform AND and NOT functions. Optical bandwidth for both gates reach 40 GHz. Also shown are AND gate waveforms at 40 Gbps.

We demonstrate the operation of low-power reflective S-SEEDs with 6-ps switching times at a 2-Volt bias. Efficient refractive micro-optics are used to optically interconnect multiple S-SEED gates. The technology platform is expected to enable dense photonic logic circuits for high-speed telecommunications-related applications. © 2009 IEEE.