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Silicon carbide lateral overtone bulk acoustic resonator with ultrahigh quality factor

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Ziaei-Moayyed, M.; Habermehl, Scott D.; Branch, Darren W.; Clews, Peggy J.; Olsson, Roy H.

This work demonstrates a lateral overtone bulk acoustic resonator (LOBAR), which consists of an aluminum nitride (AlN) transducer coupled to a suspended thin silicon carbide (SiC) film fabricated using standard CMOS-compatible processes. The LOBAR design allows for high transduction efficiency and quality factors, by decoupling the transduction and energy storage schemes in the resonator. The frequency and bandwidth of the resonator were lithographically defined and controlled. A LOBAR operating at 2.93GHz with a Q greater than 100,000 in air was fabricated and characterized, having the highest reported f×Q product of any acoustic resonator to date.

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TYPE Conference YEAR 2011
ScopusOSTI

Silicon carbide phononic crystal cavities for micromechanical resonators

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Ziaei-Moayyed, M.; Su, M.F.; Reinke, Charles M.; El-Kady, I.; Olsson, Roy H.

This paper demonstrates silicon carbide phononic crystal cavities for RF and microwave micromechanical resonators. We demonstrate design, fabrication, and characterization of Silicon Carbide/air phononic crystals used as Bragg acoustic mirrors to confine energy in a lateral SiC cavity. Aluminum nitride transducers drive and sense SiC overtone cavities in the 2-3GHz range with fxQ products exceeding 3×1013 in air. This approach enables decoupling of the piezoelectric AlN material from the SiC cavity, resulting in high Q resonators at microwave frequencies. The SiC cavities are fabricated in a CMOS-compatible process, enabling integration with wirelesss communication systems.

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TYPE Conference YEAR 2011
ScopusOSTI
9 Results
9 Results