Active Nonreciprocal and Nonlinear Surface Acoustic Wave Devices in a Heterogeneously Integrated InGaAs on Lithium Niobate Material Platform
Abstract not provided.
Publications
Megahertz Bandwidth Bulk Micromachined Optomechanical Accelerometer
Abstract not provided.
Demonstration of an Acoustoelectric Surface Acoustic Wave Circulator
Abstract not provided.
Active and Nonreciprocal Radio-Frequency Acoustic Microsystems
Radio frequency (RF) devices are becoming more multi-band, increasing the number of filters and other front-end components while simultaneously pushing towards reduced cost, size, weight, and power (CSWaP). One approach to reducing CSWaP is to augment the achievable functionalities of electromechanical/acoustic filtering chips to include "active" and nonlinear functionalities, such as gain and mixing. The acoustoelectric (AE) effect could enable such active acoustic wave devices. We have examined the AE effect with a leaky surface acoustic wave (LSAW) in a monolithic structure of epitaxial indium gallium arsenide (In GaAs) on lithium niobate (LiNb0 3 ). This lead to experimentally demonstrated state-of-the-art SAW amplifier performance in terms of gain per acoustic wavelength, reduced power consumption, and increased power efficiency. We quantitatively compare the amplifier performance to previous notable works and discuss the outlook of active acoustic wave components using this material platform. Ultimately, this could lead to smaller, higher-performance RF signal processors for communications applications.
Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.
LARGE ACOUSTOELECTRIC EFFECT IN WAFER BONDED INDIUM GALLIUM ARSENIDE / LITHIUM NIOBATE HETEROSTRUCTURE AUGMENTED BY NOVEL GATE CONTROL
Abstract not provided.
Optimization of Si-photonics compatible AlN waveguides for integrated nonlinear optics applications
Optics InfoBase Conference Papers
We explore fabrication-process dependencies on optical losses of AlN films and demonstrate Second Harmonic Generation through modal phase-matching in integrated AlN waveguides. A loss-dependent conversion efficiency model is developed to better design waveguides in lossy AlN media.
LARGE GAIN IN GATED MONOLITHIC SURFACE ACOUSTIC WAVE AMPLIIFER ON HETEROGENOUSLY INTEGRATED III-V EPITAXIAL SEMICONDUCTOR AND LITHIUM NIOBATE
Abstract not provided.
Monolithic Surface Acoustic Wave Amplifier on State-of -the-Art InP:InGaAs/Lithium Niobate Heterostructure
Abstract not provided.
9 Results