Publications

Abstract not provided.

Abstract not provided.

The stress of scandium dideuteride, ScD{sub 2}, thin films is investigated during each stage of vacuum processing including metal deposition via evaporation, reaction and cooldown. ScD{sub 2} films with thin Cr underlayers are fabricated on three different substrate materials: molybdenum-alumina cermet, single crystal sapphire and quartz. In all experiments, the evaporated Cr and Sc metal is relatively stress-free. However, reaction of scandium metal with deuterium at elevated temperature to form a stoichiometric dideuteride phase leads to a large compressive in-plane film stress. Compression during hydriding results from an increased atomic density compared with the as-deposited metal film. After reaction with deuterium, samples are cooled to ambient temperature, and a tensile stress develops due to mismatched coefficients of thermal expansion (CTE) of the substrate-film couple. The residual film stress and the propensity for films to crack during cooldown depends principally on the substrate material when using identical process parameters. Films deposited onto quartz substrates show evidence of stress relief during cooldown due to a large CTE misfit; this is correlated with crack nucleation and propagation within films. All ScD{sub 2} layers remain in a state of tension when cooled to 30 C. An in-situ, laser-based, wafer curvature sensor is designed and implemented for studies of ScD{sub 2} film stress during processing. This instrument uses a two-dimensional array of laser beams to noninvasively monitor stress during sample rotation and with samples stationary. Film stress is monitored by scattering light off the backside of substrates, i.e., side opposite of the deposition flux.