Engineering Sciesnces for National Securty Applications
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AIChE Annual Meeting, Conference Proceedings
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Technological Forecasting and Social Change
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The purpose of the report is to summarize discussions from a Ceramic/Metal Brazing: From Fundamentals to Applications Workshop that was held at Sandia National Laboratories in Albuquerque, NM on April 4, 2001. Brazing experts and users who bridge common areas of research, design, and manufacturing participated in the exercise. External perspectives on the general state of the science and technology for ceramics and metal brazing were given. Other discussions highlighted and critiqued Sandia's brazing research and engineering programs, including the latest advances in braze modeling and materials characterization. The workshop concluded with a facilitated dialogue that identified critical brazing research needs and opportunities.
As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that describe the gas-phase and surface chemistry occurring during the fluorocarbon plasma etching of silicon dioxide and related materials. The fluorocarbons examined are C{sub 2}F{sub 6}, CHF{sub 3} and C{sub 4}F{sub 8}, while the materials studied are silicon dioxide, silicon, photoresist, and silica-based low-k dielectrics. These systems were examined at different levels, ranging from in-depth treatment of C{sub 2}F{sub 6} plasma etch of oxide, to a fairly cursory examination of C{sub 4}F{sub 8} etch of the low-k dielectric. Simulations using these reaction mechanisms and AURORA, a zero-dimensional model, compare favorably with etch rates measured in three different experimental reactors, plus extensive diagnostic absolute density measurements of electron and negative ions, relative density measurements of CF, CF{sub 2}, SiF and SiF{sub 2} radicals, ion current densities, and mass spectrometric measurements of relative ion densities.