Publications

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High-purity, erbium hydride thin films have been deposited onto α-Al 2O 3 and oxidized Si by reactive sputtering methods. Rutherford backscattering spectrometry and elastic recoil detection show that films deposited at temperatures of 35, 150 and 275°C have a composition of 3H:1Er. Erbium trihydride films consist of a face-centered cubic erbium sub-lattice with a lattice parameter in the range of 5.11-5.20 Å. The formation of cubic ErH 3 is intriguing, because previous studies demonstrate a single trihydride phase with a hexagonal metal sub-lattice. The formation of a stable, cubic trihydride phase is attributed to a large, in-plane stress resulting from ion beam sputter deposition. © 2012 Elsevier B.V. All rights reserved.

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The ability to authenticate the source and integrity of data is critical to the monitoring and inspection of special nuclear materials, including hardware related to weapons production. Current methods rely on electronic encryption/authentication codes housed in monitoring devices. This always invites the question of implementation and protection of authentication information in an electronic component necessitating EMI shielding, possibly an on board power source to maintain the information in memory. By using atomic layer deposition techniques (ALD) on photonic band gap (PBG) optical fibers we will explore the potential to randomly manipulate the output spectrum and intensity of an input light source. This randomization could produce unique signatures authenticating devices with the potential to authenticate data. An external light source projected through the fiber with a spectrometer at the exit would 'read' the unique signature. No internal power or computational resources would be required.

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This document summarizes research of reactively deposited metal hydride thin films and their properties. Reactive deposition processes are of interest, because desired stoichiometric phases are created in a one-step process. In general, this allows for better control of film stress compared with two-step processes that react hydrogen with pre-deposited metal films. Films grown by reactive methods potentially have improved mechanical integrity, performance and aging characteristics. The two reactive deposition techniques described in this report are reactive sputter deposition and reactive deposition involving electron-beam evaporation. Erbium hydride thin films are the main focus of this work. ErH{sub x} films are grown by ion beam sputtering erbium in the presence of hydrogen. Substrates include a Al{sub 2}O{sub 3} {l_brace}0001{r_brace}, a Al{sub 2}O{sub 3} {l_brace}1120{r_brace}, Si{l_brace}001{r_brace} having a native oxide, and polycrystalline molybdenum substrates. Scandium dideuteride films are also studied. ScD{sub x} is grown by evaporating scandium in the presence of molecular deuterium. Substrates used for scandium deuteride growth include single crystal sapphire and molybdenum-alumina cermet. Ultra-high vacuum methods are employed in all experiments to ensure the growth of high purity films, because both erbium and scandium have a strong affinity for oxygen. Film microstructure, phase, composition and stress are evaluated using a number of thin film and surface analytical techniques. In particular, we present evidence for a new erbium hydride phase, cubic erbium trihydride. This phase develops in films having a large in-plane compressive stress independent of substrate material. Erbium hydride thin films form with a strong <111> out-of-plane texture on all substrate materials. A moderate in-plane texture is also found; this crystallographic alignment forms as a result of the substrate/target geometry and not epitaxy. Multi-beam optical sensors (MOSS) are used for in-situ analysis of erbium hydride and scandium hydride film stress. These instruments probe the evolution of film stress during all stages of deposition and cooldown. Erbium hydride thin film stress is investigated for different growth conditions including temperature and sputter gas, and properties such as thermal expansion coefficient are measured. The in-situ stress measurement technique is further developed to make it suitable for manufacturing systems. New features added to this technique include the ability to monitor multiple substrates during a single deposition and a rapidly switched, tiltable mirror that accounts for small differences in sample alignment on a platen.

The stress of scandium dideuteride, ScD{sub 2}, thin films is investigated during each stage of vacuum processing including metal deposition via evaporation, reaction and cooldown. ScD{sub 2} films with thin Cr underlayers are fabricated on three different substrate materials: molybdenum-alumina cermet, single crystal sapphire and quartz. In all experiments, the evaporated Cr and Sc metal is relatively stress-free. However, reaction of scandium metal with deuterium at elevated temperature to form a stoichiometric dideuteride phase leads to a large compressive in-plane film stress. Compression during hydriding results from an increased atomic density compared with the as-deposited metal film. After reaction with deuterium, samples are cooled to ambient temperature, and a tensile stress develops due to mismatched coefficients of thermal expansion (CTE) of the substrate-film couple. The residual film stress and the propensity for films to crack during cooldown depends principally on the substrate material when using identical process parameters. Films deposited onto quartz substrates show evidence of stress relief during cooldown due to a large CTE misfit; this is correlated with crack nucleation and propagation within films. All ScD{sub 2} layers remain in a state of tension when cooled to 30 C. An in-situ, laser-based, wafer curvature sensor is designed and implemented for studies of ScD{sub 2} film stress during processing. This instrument uses a two-dimensional array of laser beams to noninvasively monitor stress during sample rotation and with samples stationary. Film stress is monitored by scattering light off the backside of substrates, i.e., side opposite of the deposition flux.

Erbium hydride thin films are grown onto polished, a-axis {alpha} Al{sub 2}O{sub 3} (sapphire) substrates by reactive ion beam sputtering and analyzed to determine composition, phase and microstructure. Erbium is sputtered while maintaining a H{sub 2} partial pressure of 1.4 x 10{sup {minus}4} Torr. Growth is conducted at several substrate temperatures between 30 and 500 C. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analyses after deposition show that the H/Er areal density ratio is approximately 3:1 for growth temperatures of 30, 150 and 275 C, while for growth above {approximately}430 C, the ratio of hydrogen to metal is closer to 2:1. However, x-ray diffraction shows that all films have a cubic metal sublattice structure corresponding to that of ErH{sub 2}. RBS and Auger electron that sputtered erbium hydride thin films are relatively free of impurities.