Publications

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Moderate-temperature thermal sources (100° to 400°C) that radiate waste heat are often the by-product of mechanical work, chemical or nuclear reactions, or information processing. We demonstrate conversion of thermal radiation into electrical power using a bipolar grating-coupled complementary metal-oxide-silicon (CMOS) tunnel diode. A two-step photon-assisted tunneling charge pumping mechanism results in separation of charge carriers in pn-junction wells leading to a large open-circuit voltage developed across a load. Electrical power generation from a broadband blackbody thermal source has been experimentally demonstrated with converted power densities of 27 to 61 microwatts per square centimeter for thermal sources between 250° and 400°C. Scalable, efficient conversion of radiated waste heat into electrical power can be used to reduce energy consumption or to power electronics and sensors.

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Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low-loss modulators and all-optical switches due to their tunable optical properties, fast optical response, and low losses. In this work, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid-infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y-concentrations is observed. Broadband all-optical switching from near-infrared to mid-infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. This work could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid-infrared region.

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Energy harvesting from relatively low-temperature heat sources is important in applications where long-term power sources are needed such as deep space radioisotope thermoelectric generators (RTGs). Current solutions exhibit low efficiency, require exotic materials and structures, and direct contact to the heat source. While the infrared rectenna is currently low efficiency, the path exists for high-efficiency solid state devices. We have made a scalable design using standard CMOS processes, allowing for large-area fabrication. This would allow devices to be made on the wafer scale using existing fabrication technology. The rectenna has the advantage of using radiated power, thus it does not require direct contact to the hot source, but instead must only view the source. This will simplify packaging requirements and make a more robust system. The devices are monolithic and thus robust to adverse operating environments. Here we will discuss the rectenna's physics of operation, particularly light coupling into the structure. Incoming light is coupled to a metal-oxide-semiconductor (MOS) tunnel diode via a broad-area nanoantenna. The nanoantenna consists of a subwavelength metal patterning that concentrates the light into the tunnel diode where the optical signal is rectified. Both the nanoantenna and tunnel diode are distributed devices utilizing the entire area of the surface. The nanoantenna also serves as one contact of the tunnel diode. This direct integration of the nanoantenna and diode overcomes the resistive loss limitations found in prior IR rectenna concepts that resembled microwave rectenna designs scaled down to infrared sizes. We will show simulation and experimental results of fabricated devices. Simulations of the optical fields in the tunnel gap are illustrative of device operation and will be discussed. The measured infrared photocurrent is compared to simulated expectations. Far-field radiation power conversion is demonstrated using standard radiometric techniques and correlated with the rectified current response. We discuss thermal modelling of the localized heat generation within the rectenna structure to demonstrate the lack of a thermoelectric response. Lastly, we discuss future directions of work to improve power conversion efficiency.

The ability to control the light-matter interaction with an external stimulus is a very active area of research since it creates exciting new opportunities for designing optoelectronic devices. Recently, plasmonic metasurfaces have proven to be suitable candidates for achieving a strong light-matter interaction with various types of optical transitions, including intersubband transitions (ISTs) in semiconductor quantum wells (QWs). For voltage modulation of the light-matter interaction, plasmonic metasurfaces coupled to ISTs offer unique advantages since the parameters determining the strength of the interaction can be independently engineered. In this work, we report a proof-of-concept demonstration of a new approach to voltage-tune the coupling between ISTs in QWs and a plasmonic metasurface. In contrast to previous approaches, the IST strength is here modified via control of the electron populations in QWs located in the near field of the metasurface. By turning on and off the ISTs in the semiconductor QWs, we observe a modulation of the optical response of the IST coupled metasurface due to modulation of the coupled light-matter states. Because of the electrostatic design, our device exhibits an extremely low leakage current of ∼6 pA at a maximum operating bias of +1 V and therefore very low power dissipation. Our approach provides a new direction for designing voltage-tunable metasurface-based optical modulators.

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We report on the fabrication and characterization of nanocrystalline ZnO films for use as a random laser physical unclonable function (PUF). Correlation between processing conditions and film microstructure will be made to optimize the lasing properties and random response. We will specifically examine the repeatability and security of PUFs demonstrated in this novel 3 system. This demonstration has promise to impact many of Sandia's core missions including counterfeit detection. 4 4

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Considering the power constrained scaling of silicon complementary metal-oxide-semiconductor technology, the use of high mobility III-V compound semiconductors such as In0.53Ga0.47As in conjunction with high-κ dielectrics is becoming a promising option for future n-type metal-oxide-semiconductor field-effect-transistors. Development of low dissipation field-effect tunable III-V based photonic devices integrated with high-κ dielectrics is therefore very appealing from a technological perspective. In this work, we present an experimental realization of a monolithically integrable, field-effect-tunable, III-V hybrid metasurface operating at long-wave-infrared spectral bands. Our device relies on strong light-matter coupling between epsilon-near-zero (ENZ) modes of an ultra-thin In0.53Ga0.47As layer and the dipole resonances of a complementary plasmonic metasurface. The tuning mechanism of our device is based on field-effect modulation, where we modulate the coupling between the ENZ mode and the metasurface by modifying the carrier density in the ENZ layer using an external bias voltage. Modulating the bias voltage between ±2 V, we deplete and accumulate carriers in the ENZ layer, which result in spectrally tuning the eigenfrequency of the upper polariton branch at 13 μm by 480 nm and modulating the reflectance by 15%, all with leakage current densities less than 1 μA/cm2. Our wavelength scalable approach demonstrates the possibility of designing on-chip voltage-tunable filters compatible with III-V based focal plane arrays at mid- and long-wave-infrared wavelengths.

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Electrical power generation from a moderate-temperature thermal source by means of direct conversion of infrared radiation is important and highly desirable for energy harvesting from waste heat and micropower applications. Here, we demonstrate direct rectified power generation from an unbiased large-area nanoantenna-coupled tunnel diode rectifier called a rectenna. Using a vacuum radiometric measurement technique with irradiation from a temperature-stabilized thermal source, a generated power density of 8 nW/cm2 is observed at a source temperature of 450 °C for the unbiased rectenna across an optimized load resistance. The optimized load resistance for the peak power generation for each temperature coincides with the tunnel diode resistance at zero bias and corresponds to the impedance matching condition for a rectifying antenna. Current-voltage measurements of a thermally illuminated large-area rectenna show current zero crossing shifts into the second quadrant indicating rectification. Photon-assisted tunneling in the unbiased rectenna is modeled as the mechanism for the large short-circuit photocurrents observed where the photon energy serves as an effective bias across the tunnel junction. The measured current and voltage across the load resistor as a function of the thermal source temperature represents direct current electrical power generation.

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The transfer Hamiltonian tunneling current is derived in a time-dependent density matrix formulation and is used to examine photon-assisted tunneling. Bardeen's tunneling expression arises as the result of first-order perturbation theory in a mean-field expansion of the density matrix. Photon-assisted tunneling from confined electromagnetic fields in the forbidden tunnel barrier region occurs due to time-varying polarization and wave-function overlap in the gap which leads to a nonzero tunneling current in asymmetric device structures, even in an unbiased state. The photon energy is seen to act as an effective temperature-dependent bias in a uniform barrier asymmetric tunneling example problem. Higher-order terms in the density matrix expansion give rise to multiphoton enhanced tunneling currents that can be considered an extension of nonlinear optics where the nonlinear conductance plays a similar role as the nonlinear susceptibilities in the continuity equations.

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We examine the vacuum infrared photoresponse of a large-area nanoantenna-coupled tunnel diode rectenna resulting from thermal radiation from a temperature controlled heater. The measured infrared photocurrent is obtained as a function of the source temperature, sample distance and view factor. Far-field radiation power conversion is examined using standard radiometric techniques and correlated with the rectified current response.

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