High density interconnects are required for increased input/output for microelectronics applications, incentivizing the development of Cu electrochemical deposition (ECD) processes for high aspect ratio through-silicon vias (TSVs). This work outlines Cu ECD processes for 62.5 μm diameter TSVs, etched into a 625 μm thick silicon substrate, a 10:1 aspect ratio. Cu ECD in high aspect ratio features relies on a delicate balance of electrolyte composition, solution replenishment, and applied voltage. Implementing a CuSO4-H2SO4 electrolyte, which contains suppressor and a low chloride concentration, allows for a tunable relationship between applied voltage and localized deposition in the vias. A stepped potential waveform was applied to move the Cu growth front from the bottom of the via to the top. Sample characterization was performed through mechanical cross-sections and X-ray computed tomography (CT) scans. The CT scans revealed small seam voids in the Cu electrodeposit, and process parameters were tuned accordingly to produce void-free Cu features. During the voltage-controlled experiments, measured current data showed a characteristic current minimum, which was identified as an endpoint detection method for Cu deposition in these vias. We believe this is the first report of this novel endpoint detection method for TSV filling.
We generate a wide range of models of proppant-packed fractures using discrete element simulations, and measure fracture conductivity using finite element flow simulations. This allows for a controlled computational study of proppant structure and its relationship to fracture conductivity and stress in the proppant pack. For homogeneous multi-layered packings, we observe the expected increase in fracture conductivity with increasing fracture aperture, while the stress on the proppant pack remains nearly constant. This is consistent with the expected behavior in conventional proppant-packed fractures, but the present work offers a novel quantitative analysis with an explicit geometric representation of the proppant particles. In single-layered packings (i.e. proppant monolayers), there is a drastic increase in fracture conductivity as the proppant volume fraction decreases and open flow channels form. However, this also corresponds to a sharp increase in the mechanical stress on the proppant pack, as measured by the maximum normal stress relative to the side crushing strength of typical proppant particles. We also generate a variety of computational geometries that resemble highly heterogeneous proppant packings hypothesized to form during channel fracturing. In some cases, these heterogeneous packings show drastic improvements in conductivity with only moderate increase in the stress on the proppant particles, suggesting that in certain applications these structures are indeed optimal. We also compare our computer-generated structures to micro computed tomography imaging of a manually fractured laboratory-scale shale specimen, and find reasonable agreement in the geometric characteristics.