Photo-conductive AFM spectroscopy ('pcAFMs') is proposed as a high-resolution approach for investigating nanostructured photovoltaics, uniquely providing nanoscale maps of photovoltaic (PV) performance parameters such as the short circuit current, open circuit voltage, maximum power, or fill factor. The method is demonstrated with a stack of 21 images acquired during in situ illumination of micropatterned polycrystalline CdTe/CdS, providing more than 42 000 I/V curves spatially separated by ~5 nm. For these CdTe/CdS microcells, the calculated photoconduction ranges from 0 to 700 picoSiemens (pS) upon illumination with ~1.6 suns, depending on location and biasing conditions. Mean short circuit currents of 2 pA, maximum powers of 0.5 pW, and fill factors of 30% are determined. The mean voltage at which the detected photocurrent is zero is determined to be 0.7 V. Significantly, enhancements and reductions in these more commonly macroscopic PV performance metrics are observed to correlate with certain grains and grain boundaries, and are confirmed to be independent of topography. These results demonstrate the benefits of nanoscale resolved PV functional measurements, reiterate the importance of microstructural control down to the nanoscale for 'PV devices, and provide a widely applicable new approach for directly investigating PV materials.
Cd1-xZnxTe/CdS solar cells are currently limited by material defects. While nano-structuring promises further defect reductions, the materials synthesis and characterization become more challenging. Molecular dynamics models capable of growth simulations enable defects to be explored without assumptions, and can therefore guide nanoscale experiments. Such models are difficult to develop, and are not routinely available in literature for semiconductor compounds. To fill this gap, we have developed growth simulation enabling Stillinger-Weber and bond-order potentials. These new models begin to enable molecular dynamics to be used to explore nano-structured Cd1-xZnxTe/CdS solar cells with reduced defects.
Microsystems Enabled Photovoltaics (MEPV) is a relatively new field that uses microsystems tools and manufacturing techniques familiar to the semiconductor industry to produce microscale photovoltaic cells. The miniaturization of these PV cells creates new possibilities in system designs that can be used to reduce costs, enhance functionality, improve reliability, or some combination of all three. In this article, we introduce analytical tools and techniques to estimate the costs associated with a hybrid concentrating photovoltaic system that uses multi-junction microscale photovoltaic cells and miniaturized concentrating optics for harnessing direct sunlight, and an active c-Si substrate for collecting diffuse sunlight. The overall model comprises components representing costs and profit margin associated with the PV cells, concentrating optics, balance of systems, installation, and operation. This article concludes with an analysis of the component costs with particular emphasis on the microscale PV cell costs and the associated tradeoffs between cost and performance for the hybrid CPV design.
Microsystems-enabled photovoltaics (MEPV) can potentially meet increasing demands for light-weight, portable, photovoltaic solutions with high power density and efficiency. The study in this report examines failure analysis techniques to perform defect localization and evaluate MEPV modules. CMOS failure analysis techniques, including electroluminescence, light-induced voltage alteration, thermally-induced voltage alteration, optical beam induced current, and Seabeck effect imaging were successfully adapted to characterize MEPV modules. The relative advantages of each approach are reported. In addition, the effects of exposure to reverse bias and light stress are explored. MEPV was found to have good resistance to both kinds of stressors. The results form a basis for further development of failure analysis techniques for MEPVs of different materials systems or multijunction MEPVs. The incorporation of additional stress factors could be used to develop a reliability model to generate lifetime predictions for MEPVs as well as uncover opportunities for future design improvements.
We, the Postdoc Professional Development Program (PD2P) leadership team, wrote these postdoc guidelines to be a starting point for communication between new postdocs, their staff mentors, and their managers. These guidelines detail expectations and responsibilities of the three parties, as well as list relevant contacts. The purpose of the Postdoc Program is to bring in talented, creative people who enrich Sandia's environment by performing innovative R&D, as well as by stimulating intellectual curiosity and learning. Postdocs are temporary employees who come to Sandia for career development and advancement reasons. In general, the postdoc term is 1 year, renewable up to five times for a total of six years. However, center practices may vary; check with your manager. At term, a postdoc may apply for a staff position at Sandia or choose to move to university, industry or another lab. It is our vision that those who leave become long-term collaborators and advocates whose relationships with Sandia have a positive effect upon our national constituency.
Microsystem-Enabled Photovoltaic (MEPV) cells allow solar PV systems to take advantage of scaling benefits that occur as solar cells are reduced in size. We have developed MEPV cells that are 5 to 20 microns thick and down to 250 microns across. We have developed and demonstrated crystalline silicon (c-Si) cells with solar conversion efficiencies of 14.9%, and gallium arsenide (GaAs) cells with a conversion efficiency of 11.36%. In pursuing this work, we have identified over twenty scaling benefits that reduce PV system cost, improve performance, or allow new functionality. To create these cells, we have combined microfabrication techniques from various microsystem technologies. We have focused our development efforts on creating a process flow that uses standard equipment and standard wafer thicknesses, allows all high-temperature processing to be performed prior to release, and allows the remaining post-release wafer to be reprocessed and reused. The c-Si cell junctions are created using a backside point-contact PV cell process. The GaAs cells have an epitaxially grown junction. Despite the horizontal junction, these cells also are backside contacted. We provide recent developments and details for all steps of the process including junction creation, surface passivation, metallization, and release.
Sandia National Laboratories (SNL) conducts pioneering research and development in Micro-Electro-Mechanical Systems (MEMS) and solar cell research. This dissertation project combines these two areas to create ultra-thin small-form-factor crystalline silicon (c-Si) solar cells. These miniature solar cells create a new class of photovoltaics with potentially novel applications and benefits such as dramatic reductions in cost, weight and material usage. At the beginning of the project, unusually low efficiencies were obtained in the research group. The intention of this research was thus to investigate the main causes of the low efficiencies through simulation, design, fabrication, and characterization. Commercial simulation tools were used to find the main causes of low efficiency. Once the causes were identified, the results were used to create improved designs and build new devices. In the simulations, parameters were varied to see the effect on the performance. The researched parameters were: resistance, wafer lifetime, contact separation, implant characteristics (size, dosage, energy, ratio between the species), contact size, substrate thickness, surface recombination, and light concentration. Out of these parameters, it was revealed that a high quality surface passivation was the most important for obtaining higher performing cells. Therefore, several approaches for enhancing the passivation were tried, characterized, and tested on cells. In addition, a methodology to contact and test the performance of all the cells presented in the dissertation under calibrated light was created. Also, next generation cells that could incorporate all the optimized layers including the passivation was designed, built, and tested. In conclusion, through this investigation, solar cells that incorporate optimized designs and passivation schemes for ultrathin solar cells were created for the first time. Through the application of the methods discussed in this document, the efficiency of the solar cells increased from below 1% to 15% in Microsystems Enabled Photovoltaic (MEPV) devices.
Thin and small form factor cells have been researched lately by several research groups around the world due to possible lower assembly costs and reduced material consumption with higher efficiencies. Given the popularity of these devices, it is important to have detailed information about the behavior of these devices. Simulation of fabrication processes and device performance reveals some of the advantages and behavior of solar cells that are thin and small. Three main effects were studied: the effect of surface recombination on the optimum thickness, efficiency, and current density, the effect of contact distance on the efficiency for thin cells, and lastly the effect of surface recombination on the grams per Watt-peak. Results show that high efficiency can be obtained in thin devices if they are well-passivated and the distance between contacts is short. Furthermore, the ratio of grams per Watt-peak is greatly reduced as the device is thinned.
We present a newly developed microsystem enabled, back-contacted, shade-free GaAs solar cell. Using microsystem tools, we created sturdy 3 {micro}m thick devices with lateral dimensions of 250 {micro}m, 500 {micro}m, 1 mm, and 2 mm. The fabrication procedure and the results of characterization tests are discussed. The highest efficiency cell had a lateral size of 500 {micro}m and a conversion efficiency of 10%, open circuit voltage of 0.9 V and a current density of 14.9 mA/cm{sup 2} under one-sun illumination.
We present a newly developed microsystem enabled, back-contacted, shade-free GaAs solar cell. Using microsystem tools, we created sturdy 3 {micro}m thick devices with lateral dimensions of 250 {micro}m, 500 {micro}m, 1 mm, and 2 mm. The fabrication procedure and the results of characterization tests are discussed. The highest efficiency cell had a lateral size of 500 {micro}m and a conversion efficiency of 10%, open circuit voltage of 0.9 V and a current density of 14.9 mA/cm{sup 2} under one-sun illumination.