Publications

The effects of applied stress, ranging from tensile to compressive, on the atmospheric pitting corrosion behavior of 304L stainless steel (SS304L) were analyzed through accelerated atmospheric laboratory exposures and microelectrochemical cell analysis. After exposing the lateral surface of a SS304L four-point bend specimen to artificial seawater at 50°C and 35% relative humidity for 50 d, pitting characteristics were determined using optical profilometry and scanning electron microscopy. The SS304L microstructure was analyzed using electron backscatter diffraction. Additionally, localized electrochemical measurements were performed on a similar, unexposed, SS304L four-point bend bar to determine the effects of applied stress on corrosion susceptibility. Under the applied loads and the environment tested, the observed pitting characteristics showed no correlation with the applied stress (from 250 MPa to -250 MPa). Pitting depth, surface area, roundness, and distribution were found to be independent of location on the sample or applied stress. The lack of correlation between pitting statistics and applied stress was more likely due to the aggressive exposure environment, with a sea salt loading of 4 g/m2 chloride. The pitting characteristics observed were instead governed by the available cathode current and salt distribution, which are a function of sea salt loading, as well as pre-existing underlying microstructure. In microelectrochemical cell experiments performed in Cl- environments comparable to the atmospheric exposure and in environments containing orders of magnitude lower Cl- concentrations, effects of the applied stress on corrosion susceptibility were only apparent in open-circuit potential in low Cl- concentration solutions. Cl- concentration governed the current density and transpassive dissolution potential.

Abstract not provided.

Transparent electric conductors made of indium tin oxide (ITO)-doped glass prepared by a flash lamp annealing (FLA) process were compared with ITO-doped glass prepared via a conventional rapid thermal annealing (RTA) process. Stylus surface profilometry was used to determine thicknesses, scanning electron microscopy was used to image surfaces, X-ray diffraction was used to determine film structures, X-ray photoelectron spectroscopy was used to determine oxidation states and film compositions, 4-point probe measurements were used to determine electrical conductivities, UV–Vis spectroscopy was used to determine film transparencies, and selective light filtering was used to determine which wavelengths of light are needed to anneal ITO into a visibly transparent electrically conductive thin film via an FLA process. The results showed that FLA with visible light can be used to nearly instantaneously anneal ITO to create visibly transparent and electrically conductive ITO thin films on glass. The FLA process achieved this by predominately exciting unoxidized indium, unoxidized tin, tin monoxide (SnO), and non-stoichiometric indium oxide (InOx), appropriately distributed in an electron beam physical vapor-deposited amorphous ITO thin film, to allow their oxidation and crystallization into an electrically conductive visibly transparent ITO. Though it is possible to prepare ITO-doped glass that is more transparent with an RTA process, the FLA process is significantly faster, has comparable electrical conductivity, and can strongly localize heating to areas of the as-deposited ITO thin film that are not electrically conductive and visibly transparent.