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The anatomy of the minority carrier - atomic cluster interaction in semiconductors

Doyle, Barney L.; Auden, Elizabeth C.; Bielejec, Edward S.; Abraham, John B.; Vizkelethy, Gyorgy V.

This project was to use light ion beam induced charge (IBIC) to detect damage cascades generated by a single heavy ion, and thereby reveal details of the shape of the cascade and the physics of recombination of carriers that interact with the cluster. Further IBIC measurements using the hardware and software of this project will improve the accuracy of theoretical models used to predict electrical degradation in devices exposed to radiation environments. In addition, future use of light ion IBIC detection of single ion-induced damage could be used to locate single ion implantation sites in quantum computing applications. This project used Sandia's Pelletron and nanoImplanter (nI) to produce heavy ion-induced collision cascades in p-n diodes, simulating cascades made by primary knock-on atoms recoiled by neutrons. Si and Li beams from the nI were used to perform highly focused scans generating IBIC signal maps where regions of lower charge collection efficiency were observed without incurring further damage. The very first use of ion channeled beams for IBIC was explored to maximize ionization, improve contrast and provide very straight line trajectories to improve lateral resolution.

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TYPE SAND Report YEAR 2016
OSTIDOI

Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

Applied Physics Letters

Abraham, John B.; Aguirre, Brandon A.; Pacheco, Jose L.; Vizkelethy, Gyorgy V.; Bielejec, E.

We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. The ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.

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TYPE Journal Article YEAR 2016
ScopusOSTIDOI

Sub-Micron Resolution of Localized Ion Beam Induced Charge Reduction in Silicon Detectors Damaged by Heavy Ions

IEEE Transactions on Nuclear Science

Auden, Elizabeth C.; Pacheco, Jose L.; Bielejec, Edward S.; Vizkelethy, Gyorgy V.; Abraham, John B.; Doyle, Barney L.

Displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keVions focused in a 40 nm beam spot are used to create damage cascades within areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of {200 ions and 60 keV ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

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TYPE Journal Article YEAR 2015
ScopusOSTIDOI
22 Results
22 Results