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Visible light LVP on ultra-thinned substrates

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Beutler, Joshua; Clement, John J.; Miller, Mary A.; Stevens, Jeffrey S.; Cole, Edward I.

Visible light laser voltage probing (LVP) for improved backside optical spatial resolution is demonstrated on ultra-thinned samples. A prototype system for data acquisition, a method to produce ultra-thinned SOI samples, and LVP signal, imaging, and waveform acquisition are described on early and advanced SOI technology nodes. Spatial resolution and signal comparison with conventional, infrared LVP analysis is discussed.

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Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot

Nano Letters

Nguyen, Khoi T.; Lu, Tzu-Ming L.; Muller, Richard P.; Carroll, Malcolm; Lilly, Michael L.; Nielsen, Erik N.; Bishop, Nathaniel B.; Young, Ralph W.; Wendt, J.R.; Dominguez, Jason J.; Pluym, Tammy P.; Stevens, Jeffrey S.

We report Pauli blockade in a multielectron silicon metal–oxide–semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet–triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.

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SOI substrate removal for SEE characterization: Techniques and applications

IEEE Transactions on Nuclear Science

Shaneyfelt, Marty R.; Schwank, James R.; Dodd, Paul E.; Stevens, Jeffrey S.; Vizkelethy, Gyorgy; Swanson, Scot E.; Dalton, Scott M.

Techniques for removing the back substrate of SOI devices are described for both packaged devices and devices at the die level. The use of these techniques for microbeam, heavy-ion, and laser testing are illustrated. © 2012 IEEE.

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High precision fabrication of polarization insensitive resonant grating filters

Proceedings of SPIE - The International Society for Optical Engineering

Boye, R.R.; Peters, D.W.; Wendt, J.R.; Samora, S.; Stevens, Jeffrey S.; Shul, Randy J.; Hunker, J.; Kellogg, Rick A.; Kemme, S.A.

Resonant subwavelength gratings have been designed and fabricated as wavelength-specific reflectors for application as a rotary position encoder utilizing ebeam based photolithography. The first grating design used a two-dimensional layout to provide polarization insensitivity with separate layers for the grating and waveguide. The resulting devices had excellent pattern fidelity and the resonance peaks and widths closely matched the expected results. Unfortunately, the gratings were particularly angle sensitive and etch depth errors led to shifts in the center wavelength of the resonances. A second design iteration resulted in a double grating period to reduce the angle sensitivity as well as different materials and geometry; the grating and waveguide being the same layer. The inclusion of etch stop layers provided more accurate etch depths; however, the tolerance to changes in the grating duty cycle was much tighter. Results from these devices show the effects of small errors in the pattern fidelity. The fabrication process flows for both iterations of devices will be reviewed as well as the performance of the fabricated devices. A discussion of the relative merits of the various design choices provides insight into the importance of fabrication considerations during the design stage. © 2012 SPIE.

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Results 1–25 of 47
Results 1–25 of 47