Publications

Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is important for ICS that are imaged or repaired by a FIB between manufacture and operation, since the performance and reliability of a given IC is otherwise at risk in subsequent system application. In this summary, the authors discuss the relative roles of radiation damage and charging effects during FIB imaging. Data from exposures of packaged parts under controlled bias indicate the possibility for secondary radiation damage during FIB exposure. On the other hand, FIB exposure of unbiased wafers (a more common application) typically results in damage caused by high-voltage stress or electrostatic discharge. Implications for FIB exposure and subsequent IC use are discussed.

This project represented a coordinated LLNL-SNL collaboration to investigate the feasibility of developing radiation-hardened magnetic non-volatile memories using giant magnetoresistance (GMR) materials. The intent of this limited-duration study was to investigate whether giant magnetoresistance (GMR) materials similar to those used for magnetic tunnel junctions (MTJs) were process compatible with functioning CMOS circuits. Sandia's work on this project demonstrated that deposition of GMR materials did not affect the operation nor the radiation hardness of Sandia's rad-hard CMOS technology, nor did the integration of GMR materials and exposure to ionizing radiation affect the magnetic properties of the GMR films. Thus, following deposition of GMR films on rad-hard integrated circuits, both the circuits and the films survived ionizing radiation levels consistent with DOE mission requirements. Furthermore, Sandia developed techniques to pattern deposited GMR films without degrading the completed integrated circuits upon which they were deposited. The present feasibility study demonstrated all the necessary processing elements to allow fabrication of the non-volatile memory elements onto an existing CMOS chip, and even allow the use of embedded (on-chip) non-volatile memories for system-on-a-chip applications, even in demanding radiation environments. However, funding agencies DTRA, AIM, and DARPA did not have any funds available to support the required follow-on technology development projects that would have been required to develop functioning prototype circuits, nor were such funds available from LDRD nor from other DOE program funds.