Siloxane-Derived Treatments for Oxidation Protection of Carbon-Carbon Composites
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International SAMPE Symposium and Exhibition (Proceedings)
As electronic assemblies become more compact and with increased processing bandwidth, the escalating thermal energy has become more difficult to manage. The major limitation has been nonmetallic joining using poor thermal interface materials (TIM). The interfacial, versus bulk, thermal conductivity of an adhesive is the major loss mechanism and normally accounts for an order magnitude loss in conductivity per equivalent thickness. The next generation TIM requires a sophisticated understanding of material and surface sciences, heat transport at sub-micron scales and the manufacturing processes used in packaging of microelectronics and other target applications. Only when this relationship between bondline manufacturing processes, structure and contact resistance is well understood on a fundamental level, would it be possible to advance the development of miniaturized microsystems. We give the status of the study of thermal transport across these interfaces.
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Proposed for publication in Polymer.
The effect of block copolymers on the cocontinuous morphology of 50/50 (w/w) polystyrene (PS)/high density polyethylene (HDPE) blends was investigated using symmetric polystyrene-polyethylene block copolymers (PS-PE) with molecular weights varying from 6 to 200 kg/mol. The coarsening rate during annealing was compared to the Doi-Ohta theory. An intermediate molecular weight PS-PE, 40 kg/mol, showed remarkable results in reducing the phase size and stabilizing the blend morphology during annealing. Mixing small amounts of 6, 100 or 200 kg/mol PS-PE in the blend did not reduce the phase size significantly, but did decrease the coarsening rate during annealing. In stabilizing the morphology, 6 kg/mol PS-PE was inferior to 100 and 200 kg/mol. The existence of an optimal molecular weight block copolymer is due to a balance between the ability of the block copolymer to reach the interface and its relative stabilization effect at the interface.