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Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells

2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017

McLain, Michael L.; McDonald, Joseph K.; Hjalmarson, Harold P.; Serrano, Jason D.; Cuoco, Roy P.; Hanson, Donald J.; Hughart, David R.; Marinella, Matthew J.; Hartman, E.F.

The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaOx) memristive bit cells are investigated. The TaOx devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function of temperature, accumulated dose, and bias at the Gamma Irradiation Facility (GIF). The data indicate that devices reset into the high resistance off-state exhibit decreases in resistance when the temperature is increased. However, an increased susceptibility to TID at elevated temperatures was not observed.

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TYPE Conference Poster YEAR 2017
ScopusOSTIDOI

Z-pinch current-scaling experiments at 10[7] amps

Proposed for publication in Physical Review E.

Stygar, William A.; Matzen, M.K.; Mazarakis, Michael G.; McDaniel, Dillon H.; McGurn, John S.; Mckenney, John M.; Mix, L.P.; Muron, David J.; Ramirez, Juan J.; Ruggles, Larry R.; Stygar, William A.; Seamen, Johann F.; Simpson, Walter W.; Speas, Christopher S.; Spielman, Rick B.; Struve, Kenneth W.; Vesey, Roger A.; Wagoner, Tim C.; Gilliland, Terrance L.; Bennett, Guy R.; Ives, Harry C.; Jobe, Daniel O.; Lazier, Steven E.; Mills, Jerry A.; Mulville, Thomas D.; Pyle, John H.; Romero, Tobias M.; Seamen, Johann F.; Serrano, Jason D.; Smelser, Ruth S.; Fehl, David L.; Cuneo, M.E.; Bailey, James E.; Bliss, David E.; Chandler, Gordon A.; Leeper, Ramon J.

Abstract not provided.

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TYPE Journal Article YEAR 2003
OSTI
6 Results
6 Results