Publications

Klein, Brianna A.; Baca, A.G.; Allerman, A.A.; Nordquist, Christopher N.; Armstrong, Andrew A.; Wendt, J.R.; Saugen, J.M.; Binder, Andrew B.; Smith, Trevor S.; Pipkin, Jennifer R.; Kaplar, Robert K.; Hines, Nicholas H.; Graham, Samuel G.

Abstract not provided.

Lee, Jongmin L.; Biedermann, Grant B.; McGuinness, Hayden J.; Soh, Daniel B.; Christensen, Justin C.; Ding, Roger D.; Finnegan, Patrick S.; Hoth, Gregory W.; Kindel, Will K.; Little, Bethany J.; Rosenthal, Randy R.; Wendt, J.R.; Lentine, Anthony L.; Eichenfield, Matthew S.; Gehl, M.; Kodigala, Ashok; Siddiqui, Aleem M.; Skogen, Erik J.; Vawter, Gregory A.; Ison, Aaron M.; Bossert, David B.; Fuerschbach, Kyle H.; Gillund, Daniel P.; Walker, Charles A.; De Smet, Dennis J.; Brashar, Connor B.; Berg, Joseph B.; Jhaveri, Prabodh M.; Smith, Tony G.; Kemme, S.A.; Schwindt, Peter S.

Abstract not provided.

Nenoff, T.M.; Chou, Stanley S.; Dickens, Peter D.; Modine, N.A.; Yu, Wenlong Y.; Lee, Stephen R.; Sapkota, Keshab R.; Wang, George T.; Wendt, J.R.; Medlin, Douglas L.; Leonard, Francois L.; Pan, Wei P.

Recent years have seen an explosion in research efforts discovering and understanding novel electronic and optical properties of topological quantum materials (TQMs). In this LDRD, a synergistic effort of materials growth, characterization, electrical-magneto-optical measurements, combined with density functional theory and modeling has been established to address the unique properties of TQMs. Particularly, we have carried out extensive studies in search for Majorana fermions (MFs) in TQMs for topological quantum computation. Moreover, we have focused on three important science questions. 1) How can we controllably tune the properties of TQMs to make them suitable for quantum information applications? 2) What materials parameters are most important for successfully observing MFs in TQMs? 3) Can the physical properties of TQMs be tailored by topological band engineering? Results obtained in this LDRD not only deepen our current knowledge in fundamental quantum physics but also hold great promise for advanced electronic/photonic applications in information technologies. ACKNOWLEDGEMENTS The work at Sandia National Labs was supported by a Laboratory Directed Research and Development project. Device fabrication was performed at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. We are grateful to many people inside and outside Sandia for their support and fruitful collaborations. This report describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-NA0003525.

Journal of Electronic Materials

Klein, Brianna A.; Baca, A.G.; Lepkowski, Stefan M.; Nordquist, Christopher N.; Wendt, J.R.; Allerman, A.A.; Armstrong, Andrew A.; Douglas, Erica A.; Abate, Vincent M.; Kaplar, Robert K.

Gate length dependent (80 nm–5000 mm) radio frequency measurements to extract saturation velocity are reported for Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistors fabricated into radio frequency devices using electron beam lithography. Direct current characterization revealed the threshold voltage shifting positively with increasing gate length, with devices changing from depletion mode to enhancement mode when the gate length was greater than or equal to 450 nm. Transconductance varied from 10 mS/mm to 25 mS/mm, with the 450 nm device having the highest values. Maximum drain current density was 268 mA/mm at 10 V gate bias. Scattering-parameter characterization revealed a maximum unity gain bandwidth (fT) of 28 GHz, achieved by the 80 nm gate length device. A saturation velocity value of 3.8 × 106 cm/s, or 35% of the maximum saturation velocity reported for GaN, was extracted from the fT measurements.

Mounce, Andrew M.; Monical, Cara P.; Lewis, Phillip J.; Jacobson, Noah T.; Jock, Ryan M.; Wendt, J.R.; Pluym, Tammy P.; Ward, Daniel R.; Larson, K.W.; Lilly, Michael L.; Luhman, Dwight R.

Abstract not provided.

Ruiz, Isaac R.; Howell, Stephen W.; Goldflam, Michael G.; Beechem, Thomas E.; Wendt, J.R.

Abstract not provided.

Luk, Ting S.; Wood, Michael G.; Parameswaran, Sivasubramanian P.; Wendt, J.R.; Serkland, Darwin K.; Keeler, Gordon A.

Abstract not provided.

Kaplar, Robert K.; Baca, A.G.; Klein, Brianna A.; Wendt, J.R.; Lepkowski, Stefan M.; Nordquist, Christopher N.; Armstrong, Andrew A.; Allerman, A.A.; Douglas, Erica A.; Reza, Shahed R.; Flicker, Jack D.

Abstract not provided.

Applied Physics Letters

Rochette, Sophie R.; Rudolph, Martin R.; Roy, A.-M.R.; Curry, Matthew J.; Ten Eyck, G.A.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Carr, Stephen M.; Ward, Daniel R.; Lilly, M.P.; Carroll, Malcolm

Abstract not provided.

Mounce, Andrew M.; Lewis, Phillip J.; Monical, Cara P.; Jacobson, Noah T.; Rudolph, Martin R.; Anderson, John M.; Wendt, J.R.; Pluym, Tammy P.; Ward, Daniel R.; Larson, K.W.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Kaplar, Robert K.; Baca, A.G.; Klein, Brianna A.; Wendt, J.R.; Lepkowski, Stefan M.; Nordquist, Christopher N.; Armstrong, Andrew A.; Allerman, A.A.; Douglas, Erica A.; Reza, Shahed R.; Flicker, Jack D.

Abstract not provided.

IEEE Electron Device Letters

Baca, A.G.; Klein, Brianna A.; Wendt, J.R.; Lepkowski, Stefan M.; Nordquist, Christopher N.; Armstrong, Andrew A.; Allerman, A.A.; Douglas, Erica A.; Kaplar, Robert K.

Al-rich AlGaN-channel high electron mobility transistors with 80-nm long gates and 85% (70%) Al in the barrier (channel) were evaluated for RF performance. The dc characteristics include a maximum current of 160 mA/mm with a transconductance of 24 mS/mm, limited by source and drain contacts, and an on/off current ratio of 109. fT of 28.4 GHz and fMAX of 18.5 GHz were determined from small-signal S-parameter measurements. Output power density of 0.38 W/mm was realized at 3 GHz in a power sweep using on-wafer load pull techniques.

Beechem, Thomas E.; Peters, D.W.; Wendt, J.R.; Ruiz, Isaac R.; Howell, Stephen W.; Sinclair, Michael B.; Tauke-Pedretti, Anna; Anderson, Evan M.; Coon, Wesley T.; Fortune, Torben R.; Finnegan, Patrick S.; Shaner, Eric A.; Klem, John F.; Kim, Jin K.; Goldflam, Michael G.

Abstract not provided.

Applied Physics Letters

Sarma, Raktim S.; Campione, Salvatore; Goldflam, Michael G.; Shank, Joshua S.; Noh, Jinhyun; Le, Loan T.; Lange, Michael D.; Ye, Peide D.; Wendt, J.R.; Ruiz, Isaac R.; Howell, Stephen W.; Sinclair, Michael B.; Wanke, Michael W.; Brener, Igal B.

The ability to control the light-matter interaction with an external stimulus is a very active area of research since it creates exciting new opportunities for designing optoelectronic devices. Recently, plasmonic metasurfaces have proven to be suitable candidates for achieving a strong light-matter interaction with various types of optical transitions, including intersubband transitions (ISTs) in semiconductor quantum wells (QWs). For voltage modulation of the light-matter interaction, plasmonic metasurfaces coupled to ISTs offer unique advantages since the parameters determining the strength of the interaction can be independently engineered. In this work, we report a proof-of-concept demonstration of a new approach to voltage-tune the coupling between ISTs in QWs and a plasmonic metasurface. In contrast to previous approaches, the IST strength is here modified via control of the electron populations in QWs located in the near field of the metasurface. By turning on and off the ISTs in the semiconductor QWs, we observe a modulation of the optical response of the IST coupled metasurface due to modulation of the coupled light-matter states. Because of the electrostatic design, our device exhibits an extremely low leakage current of ∼6 pA at a maximum operating bias of +1 V and therefore very low power dissipation. Our approach provides a new direction for designing voltage-tunable metasurface-based optical modulators.

Rudolph, Martin R.; Mounce, Andrew M.; England, Troy D.; Jock, Ryan M.; Sharma, Peter A.; Jacobson, Noah T.; Ward, Daniel R.; Pluym, Tammy P.; Silva, Beverly L.; Anderson, John M.; Wendt, J.R.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.

Bureau-Oxton, Chloe B.; Rudinger, Kenneth M.; Jacobson, Noah T.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Pioro-Ladriere, Michel P.; Luhman, Dwight R.; Carroll, Malcolm

Abstract not provided.

Jock, Ryan M.; Rudolph, Martin R.; Jacobson, Noah T.; Ward, Daniel R.; Harvey-Collard, Patrick H.; Bureau-Oxton, Chloe B.; Srinivasa, Vanita S.; Mounce, Andrew M.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Baczewski, Andrew D.; Grace, Matthew G.; Witzel, Wayne W.; Carroll, Malcolm

Abstract not provided.

Harvey-Collard, Patrick H.; Jacobson, Noah T.; Bureau-Oxton, Chloe B.; Jock, Ryan M.; Srinivasa, Vanita S.; Mounce, Andrew M.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Luhman, Dwight R.; Pioro-Ladriere, Michel P.; Carroll, Malcolm

Abstract not provided.

Sarma, Raktim S.; Campione, Salvatore; Goldflam, Michael G.; Shank, Joshua S.; Noh, Jinhyun N.; Ye, Peide Y.; Klem, John F.; Wendt, J.R.; Sinclair, Michael B.; Brener, Igal B.

Abstract not provided.

Applied Physics Letters

Sarma, Raktim S.; Campione, Salvatore; Goldflam, Michael G.; Shank, Joshua S.; Noh, Jinhyun; Smith, Sean S.; Ye, Peide D.; Sinclair, Michael B.; Klem, John F.; Wendt, J.R.; Ruiz, Isaac R.; Howell, Stephen W.; Brener, Igal B.

Considering the power constrained scaling of silicon complementary metal-oxide-semiconductor technology, the use of high mobility III-V compound semiconductors such as In0.53Ga0.47As in conjunction with high-κ dielectrics is becoming a promising option for future n-type metal-oxide-semiconductor field-effect-transistors. Development of low dissipation field-effect tunable III-V based photonic devices integrated with high-κ dielectrics is therefore very appealing from a technological perspective. In this work, we present an experimental realization of a monolithically integrable, field-effect-tunable, III-V hybrid metasurface operating at long-wave-infrared spectral bands. Our device relies on strong light-matter coupling between epsilon-near-zero (ENZ) modes of an ultra-thin In0.53Ga0.47As layer and the dipole resonances of a complementary plasmonic metasurface. The tuning mechanism of our device is based on field-effect modulation, where we modulate the coupling between the ENZ mode and the metasurface by modifying the carrier density in the ENZ layer using an external bias voltage. Modulating the bias voltage between ±2 V, we deplete and accumulate carriers in the ENZ layer, which result in spectrally tuning the eigenfrequency of the upper polariton branch at 13 μm by 480 nm and modulating the reflectance by 15%, all with leakage current densities less than 1 μA/cm2. Our wavelength scalable approach demonstrates the possibility of designing on-chip voltage-tunable filters compatible with III-V based focal plane arrays at mid- and long-wave-infrared wavelengths.

Rudolph, Martin R.; Harvey-Collard, Patrick H.; Jock, Ryan M.; Jacobson, Noah T.; Wendt, J.R.; Pluym, Tammy P.; Dominguez, Jason J.; Ten Eyck, Gregory A.; Manginell, Ronald P.; Lilly, Michael L.; Carroll, Malcolm; Sharma, Peter A.

Abstract not provided.

Peters, D.W.; Kim, Jin K.; Tauke-Pedretti, Anna; Davids, Paul D.; Goldflam, Michael G.; Sinclair, Michael B.; Wendt, J.R.; Warne, Larry K.; Campione, Salvatore; Pung, Aaron J.; Wood, Michael G.; Anderson, Evan M.; Finnegan, Patrick S.; Alford, Charles A.; Weiner, Phillip H.; Fortune, Torben R.; Coon, Wesley T.; Hawkins, Samuel D.

Abstract not provided.

Sarma, Raktim S.; Campione, Salvatore; Goldflam, Michael G.; Shank, Joshua S.; Smith, Sean S.; Noh, Jinhyun N.; Ye, Peide Y.; Sinclair, Michael B.; Subramania, Ganapathi S.; Ruiz, Isaac R.; Wendt, J.R.; Brener, Igal B.

Abstract not provided.

Sarma, Raktim S.; Campione, Salvatore; Goldflam, Michael G.; Le, Loan L.; Lange, Mike L.; Shank, Joshua S.; Wanke, Michael W.; Noh, Jinhyun N.; Ye, Peide Y.; Ruiz, Isaac R.; Sinclair, Michael B.; Wendt, J.R.; Brener, Igal B.

Abstract not provided.

Bureau-Oxton, Chloe B.; Harvy-Collard, Patrick H.; Jacobson, Noah T.; Jock, Ryan M.; Srinivasa, Vanita S.; Mounce, Andrew M.; Ward, Daniel R.; Anderson, John M.; Manginell, Ronald P.; Wendt, J.R.; Pluym, Tammy P.; Lilly, Michael L.; Luhman, Dwight R.; Pioro-Ladriere, Michel P.; Carroll, Malcolm

Abstract not provided.