Publications

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Manufacturing of integrated circuits (ICs) using a split foundry process expands design space in IC fabrication by employing unique capabilities of multiple foundries and provides added security for IC designers [1] Defect localization and root cause analysis is critical to failure identification and implementation of corrective actions. In addition to split-foundry fabrication, the device addressed in this publication is .comprised of 8 metal layers, aluminum test pads, and tungsten thru-silicon vias (TSVs) making the circuit area > 68% metal. This manuscript addresses the failure analysis efforts involved in root cause analysis, failure analysis findings, and the corrective actions implemented to eliminate these failure mechanisms from occurring in future product.

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This report summarizes design and modeling activities for the MEMS passive shock sensor. It provides a description of past design revisions, including the purposes and major differences between design revisions but with a focus on Revisions 4 through 7 and the work performed in fiscal year 2008 (FY08). This report is a reference for comparing different designs; it summarizes design parameters and analysis results, and identifies test structures. It also highlights some of the changes and or additions to models previously documented [Mitchell et al. 2006, Mitchell et al. 2008] such as the way uncertainty thresholds are analyzed and reported. It also includes dynamic simulation results used to investigate how positioning of hard stops may reduce vibration sensitivity.

This report summarizes the functional, model validation, and technology readiness testing of the Sandia MEMS Passive Shock Sensor in FY08. Functional testing of a large number of revision 4 parts showed robust and consistent performance. Model validation testing helped tune the models to match data well and identified several areas for future investigation related to high frequency sensitivity and thermal effects. Finally, technology readiness testing demonstrated the integrated elements of the sensor under realistic environments.

This report describes activities conducted in FY07 to mature the MEMS passive shock sensor. The first chapter of the report provides motivation and background on activities that are described in detail in later chapters. The second chapter discusses concepts that are important for integrating the MEMS passive shock sensor into a system. Following these two introductory chapters, the report details modeling and design efforts, packaging, failure analysis and testing and validation. At the end of FY07, the MEMS passive shock sensor was at TRL 4.

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Qualification of microsystems for weapon applications is critically dependent on our ability to build confidence in their performance, by predicting the evolution of their behavior over time in the stockpile. The objective of this work was to accelerate aging mechanisms operative in surface micromachined silicon microelectromechanical systems (MEMS) with contacting surfaces that are stored for many years prior to use, to determine the effects of aging on reliability, and relate those effects to changes in the behavior of interfaces. Hence the main focus was on 'dormant' storage effects on the reliability of devices having mechanical contacts, the first time they must move. A large number ({approx}1000) of modules containing prototype devices and diagnostic structures were packaged using the best available processes for simple electromechanical devices. The packaging processes evolved during the project to better protect surfaces from exposure to contaminants and water vapor. Packages were subjected to accelerated aging and stress tests to explore dormancy and operational environment effects on reliability and performance. Functional tests and quantitative measurements of adhesion and friction demonstrated that the main failure mechanism during dormant storage is change in adhesion and friction, precipitated by loss of the fluorinated monolayer applied after fabrication. The data indicate that damage to the monolayer can occur at water vapor concentrations as low as 500 ppm inside the package. The most common type of failure was attributed to surfaces that were in direct contact during aging. The application of quantitative methods for monolayer lubricant analysis showed that even though the coverage of vapor-deposited monolayers is generally very uniform, even on hidden surfaces, locations of intimate contact can be significantly depleted in initial concentration of lubricating molecules. These areas represent defects in the film prone to adsorption of water or contaminants that can cause movable structures to adhere. These analysis methods also indicated significant variability in the coverage of lubricating molecules from one coating process to another, even for identical processing conditions. The variability was due to residual molecules left in the deposition chamber after incomplete cleaning. The coating process was modified to result in improved uniformity and total coverage. Still, a direct correlation was found between the resulting static friction behavior of MEMS interfaces, and the absolute monolayer coverage. While experimental results indicated that many devices would fail to start after aging, the modeling approach used here predicted that all the devices should start. Adhesion modeling based upon values of adhesion energy from cantilever beams is therefore inadequate. Material deposition that bridged gaps was observed in some devices, and potentially inhibits start-up more than the adhesion model indicates. Advances were made in our ability to model MEMS devices, but additional combined experimental-modeling studies will be needed to advance the work to a point of providing predictive capability. The methodology developed here should prove useful in future assessments of device aging, however. Namely, it consisted of measuring interface properties, determining how they change with time, developing a model of device behavior incorporating interface behavior, and then using the age-aware interface behavior model to predict device function.

Optical actuation of microelectromechanical systems (MEMS) is advantageous for applications for which electrical isolation is desired. Thirty-two polycrystalline silicon opto-thermal actuators, optically-powered MEMS thermal actuators, were designed, fabricated, and tested. The design of the opto-thermal actuators consists of a target for laser illumination suspended between angled legs that expand when heated, providing the displacement and force output. While the amount of displacement observed for the opto-thermal actuators was fairly uniform for the actuators, the amount of damage resulting from the laser heating ranged from essentially no damage to significant amounts of damage on the target. The likelihood of damage depended on the target design with two of the four target designs being more susceptible to damage. Failure analysis of damaged targets revealed the extent and depth of the damage.

Failure analysis and device characterization of MEMS components are critical steps in understanding the root causes of failure and improving device performance. At the wafer and die level these tasks can be performed with little or no sample preparation. Larger challenges occur after fabrication when the device is packaged, capped, sealed, or otherwise obstructed from view. The challenges and issues of MEMS failure analysis lie in identifying the root cause of failure for these packaged, capped, and sealed devices without perturbing the device or its immediate environment. Novel methods of gaining access to the device or preparing the device for analysis are crucial to accurately determining the root cause of failure. This paper will discuss issues identified in performing root cause failure analysis of packaged MEMS devices, as well as the methods employed to analyze them.

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Optical actuation of microelectromechanical systems (MEMS) is advantageous for applications for which electrical isolation is desired. Thirty-two polycrystalline silicon opto-thermal actuators, optically-powered MEMS thermal actuators, were designed, fabricated, and tested. The design of the opto-thermal actuators consists of a target for laser illumination suspended between angled legs that expand when heated, providing the displacement and force output. While the amount of displacement observed for the opto-thermal actuators was fairly uniform for the actuators, the amount of damage resulting from the laser heating ranged from essentially no damage to significant amounts of damage on the target. The likelihood of damage depended on the target design with two of the four target designs being more susceptible to damage. Failure analysis of damaged targets revealed the extent and depth of the damage.

Thermal actuators have proven to be a robust actuation method in surface-micromachined MEMS processes. Their higher output force and lower input voltage make them an attractive alternative to more traditional electrostatic actuation methods. A predictive model of thermal actuator behavior has been developed and validated that can be used as a design tool to customize the performance of an actuator to a specific application. This tool has also been used to better understand thermal actuator reliability by comparing the maximum actuator temperature to the measured lifetime. Modeling thermal actuator behavior requires the use of two sequentially coupled models, the first to predict the temperature increase of the actuator due to the applied current and the second to model the mechanical response of the structure due to the increase in temperature. These two models have been developed using Matlab for the thermal response and ANSYS for the structural response. Both models have been shown to agree well with experimental data. In a parallel effort, the reliability and failure mechanisms of thermal actuators have been studied. Their response to electrical overstress and electrostatic discharge has been measured and a study has been performed to determine actuator lifetime at various temperatures and operating conditions. The results from this study have been used to determine a maximum reliable operating temperature that, when used in conjunction with the predictive model, enables us to design in reliability and customize the performance of an actuator at the design stage.

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This work demonstrates a polycrystalline silicon surface-micromachined inchworm actuator that exhibits high-performance characteristics such as large force (±0.5 millinewtons), large velocity range (0 to ±4.4 mm/sec), large displacement range (±100 microns), small step size (±10, ±40 or ±100 nanometers), low power consumption (nanojoules per cycle), continuous bidirectional operation and relatively small area (600 × 200μm2). An in situ load spring calibrated on a logarithmic scale from micronewtons to millinewtons, optical microscopy and Michelson interferometry are used to characterize its performance. The actuator consists of a force-amplifying plate that spans two voltage-controlled clamps, and walking is achieved by appropriately sequencing signals to these three components. In the clamps, normal force is borne by equipotential rubbing counterfaces, enabling friction to be measured against load. Using different monolayer coatings, we show that the static coefficient of friction can be changed from 0.14 to 1.04, and that it is load-independent over a broad range. We further find that the static coefficient of friction does not accurately predict the force generated by the actuator and attribute this to nanometer-scale presliding tangential deflections.

Many of the tools and techniques used to evaluate and characterize ICs can be applied to MEMS technology. In this paper we discuss various tools and techniques used to provide structural, chemical, and electrical analysis and how these data aid in qualifying MEMS technologies.

MEMS processes and components are rapidly changing in device design, processing, and, most importantly, application. This paper will discuss the future challenges faced by the MEMS failure analysis as the field of MEMS (fabrication, component design, and applications) grows. Specific areas of concern for the failure analyst will also be discussed. MEMS components are extremely diverse in their application and function. Failure analysts will have to be equally diverse and/or multidisciplinary in their analysis of these devices. Many tools and techniques developed from the IC industry have been used for MEMS FA, but more MEMS-specific FA toolsets have to be developed for diagnosis of these failure mechanisms. Many of the devices discussed in this paper have global issues associated with failure analysis. Many non destructive techniques must be developed to assess the failure mechanisms. Tools and techniques that can perform these functions on a larger scale will also be required. To achieve this, industry will have to work with academia and government institutions to create the knowledge base required for tool and technique development for global and local defect localization.

Microelectromechanical Systems (MEMS) have gained acceptance as viable products for many commercial and government applications. MEMS are currently being used as displays for digital projection systems, sensors for airbag deployment systems, inkjet print head systems, and optical routers. This paper will discuss current and future MEMS applications. What are MEMS? MEMS are typically defined as microscopic devices designed, processed, and used to interact or produce changes within a local environment. A mechanical, electrical, or chemical stimulus can be used to create a mechanical, electrical, or chemical response in a local environment. These smaller, more sophisticated devices that think, act, sense, and communicate are replacing their bulk counterparts in many traditional applications.

MEMS components by their very nature have different and unique failure mechanisms than their macroscopic counterparts. This paper discusses failure mechanisms observed in various MEMS components and technologies. MEMS devices fabricated using bulk and surface micromachining process technologies are emphasized. MEMS devices offer uniqueness in their application, fabrication, and functionality. Their uniqueness creates various failure mechanisms not typically found in their bulk or IC counterparts. In ICs, electrical precautions are taken to mitigate failure. In MEMS, both electrical and mechanical precautions must be enacted to reduce the risk of failure and increased reliability. Unlike ICs, many MEMS components are designed to interact with their environment, making the fabrication, testing, and packaging processes critical for the success of the device.

We have designed and fabricated a polysilicon sidewall-contact motion monitor that fits in between the teeth of a MEMS gear. The monitor has a center grounded member that is moved into contact with a pad held at voltage. When observing motion, however, the monitor fails after only a few actuations. A thorough investigation of the contacting interfaces revealed that for voltages > 5 V with a current limit of 100 pA, the main conduction process is Fowler-Nordheim tunneling. After a few switch cycles, the polysilicon interfaces became insulating. This is shown to be a permanent change and the suspected mechanism is field-induced oxidation of the asperity contacts. To reduce the effects of field-induced oxidation, tests were performed at 0.5 V and no permanent insulation was observed. However, the position of the two contacting surfaces produced three types of conduction processes: Fowler-Nordheim tunneling, ohmic, and insulator, which were observed in a random order during switch cycling. The alignment of contact asperities produced this positional effect.

Electrostatic discharge (ESD) and electrical overstress (EOS) damage of Micro-Electro-Mechanical Systems (MEMS) has been identified as a new failure mode. This failure mode has not been previously recognized or addressed primarily due to the mechanical nature and functionality of these systems, as well as the physical failure signature that resembles stiction. Because many MEMS devices function by electrostatic actuation, the possibility of these devices not only being susceptible to ESD or EOS damage but also having a high probability of suffering catastrophic failure due to ESD or EOS is very real. Results from previous experiments have shown stationary comb fingers adhered to the ground plane on MEMS devices tested in shock, vibration, and benign environments. Using Sandia polysilicon microengines, we have conducted tests to establish and explain the ESD/EOS failure mechanism of MEMS devices. These devices were electronically and optically inspected prior to and after ESD and EOS testing. This paper will address the issues surrounding MEMS susceptibility to ESD and EOS damage as well as describe the experimental method and results found from ESD and EOS testing. The tests were conducted using conventional IC failure analysis and reliability assessment characterization tools. In this paper we will also present a thermal model to accurately depict the heat exchange between an electrostatic comb finger and the ground plane during an ESD event.

Electrical shorting in micro-electro-mechanical systems (MEMS) is a significant production and manufacturing concern. We present a new approach to localizing shorted MEMS devices using Thermally-Induced Voltage Alteration (TIVA) [1]. In TIVA, the shorted, thermally isolated MEMS device is very sensitive to thermal stimulus. The site of the MEMS short will respond as a thermocouple when heated. By monitoring the potential across the shorted MEMS device as a laser scans across the sample, an image showing the location of the thermocouple (short site) can be generated. The TIVA signal for thermally isolated MEMS devices is much higher than that observed for conventional IC interconnections. This results from the larger temperature gradients generated during laser scanning due to little or no substrate heat sinking. The capability to quickly localize shorted MEMS structures is demonstrated by several examples. Thermal modeling of heat distributions is presented and is consistent with the experimental results.

Two major problems associated with Si-based MEMS (MicroElectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, we will present a CVD (Chemical Vapor Deposition) process that selectively coats MEMS devices with tungsten and significantly enhances device durability. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable. This selective deposition process results in a very conformal coating and can potentially address both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through the silicon reduction of WF6. The self-limiting nature of this selective. We deposition process ensures the consistency necessary for process control. The tungsten is deposited after the removal of the sacrificial oxides to minimize stress and process integration problems. Tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. The wear resistance of selectively coated W parts has been shown to be significantly improved on microengine test structures.

Failure analysis (FA) tools have been applied to analyze tungsten coated polysilicon microengines. These devices were stressed under accelerated conditions at ambient temperatures and pressure. Preliminary results illustrating the failure modes of microengines operated under variable humidity and ultra-high drive frequency will also be shown. Analysis of tungsten coated microengines revealed the absence of wear debris in microengines operated under ambient conditions. Plan view imaging of these microengines using scanning electron microscopy (SEM) revealed no accumulation of wear debris on the surface of the gears or ground plane on microengines operated under standard laboratory conditions. Friction bearing surfaces were exposed and analyzed using the focused ion beam (FIB). These cross sections revealed no accumulation of debris along friction bearing surfaces. By using transmission electron microscopy (TEM) in conjunction with electron energy loss spectroscopy (EELS), we were able to identify the thickness, elemental analysis, and crystallographic properties of tungsten coated MEMS devices. Atomic force microscopy was also utilized to analyze the surface roughness of friction bearing surfaces.

Two major problems associated with Si-based MEMS (MicroElectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors present a CVD (Chemical Vapor Deposition) process that selectively coats MEMS devices with tungsten and significantly enhances device durability. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable. This selective deposition process results in a very conformal coating and can potentially address both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through the silicon reduction of WF{sub 6}. The self-limiting nature of the process ensures consistent process control. The tungsten is deposited after the removal of the sacrificial oxides to minimize stress and process integration problems. The tungsten coating adheres well and is hard and conducting, which enhances performance for numerous devices. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release adhered parts that are contacted over small areas such as dimples. The wear resistance of tungsten coated parts has been shown to be significantly improved by microengine test structures.

In order to determine the susceptibility of the MEMS (MicroElectroMechanical Systems) devices to shock, tests were performed using haversine shock pulses with widths of 1 to 0.2 ms in the range from 500g to 40,000g. The authors chose a surface-micromachined microengine because it has all the components needed for evaluation: springs that flex, gears that are anchored, and clamps and spring stops to maintain alignment. The microengines, which were unpowered for the tests, performed quite well at most shock levels with a majority functioning after the impact. Debris from the die edges moved at levels greater than 4,000g causing shorts in the actuators and posing reliability concerns. The coupling agent used to prevent stiction in the MEMS release weakened the die-attach bond, which produced failures at 10,000g and above. At 20,000g the authors began to observe structural damage in some of the thin flexures and 2.5-micron diameter pin joints. The authors observed electrical failures caused by the movement of debris. Additionally, they observed a new failure mode where stationary comb fingers contact the ground plane resulting in electrical shorts. These new failure were observed in the control group indicating that they were not shock related.

MicroElectricalMechanical Systems (MEMS) were subjected to a vibration environment that had a peak acceleration of 120g and spanned frequencies from 20 to 2000 Hz. The device chosen for this test was a surface-micromachined microengine because it possesses many elements (springs, gears, rubbing surfaces) that may be susceptible to vibration. The microengines were unpowered during the test. The authors observed 2 vibration-related failures and 3 electrical failures out of 22 microengines tested. Surprisingly, the electrical failures also arose in four microengines in the control group indicating that they were not vibration related. Failure analysis revealed that the electrical failures were due to shorting of stationary comb fingers to the ground plane.

The burgeoning new technology of Micro-Electro-Mechanical Systems (MEMS) shows great promise in the weapons arena. We can now conceive of micro-gyros, micro-surety systems, and micro-navigators that are extremely small and inexpensive. Do we want to use this new technology in critical applications such as nuclear weapons? This question drove us to understand the reliability and failure mechanisms of silicon surface-micromachined MEMS. Development of a testing infrastructure was a crucial step to perform reliability experiments on MEMS devices and will be reported here. In addition, reliability test structures have been designed and characterized. Many experiments were performed to investigate failure modes and specifically those in different environments (humidity, temperature, shock, vibration, and storage). A predictive reliability model for wear of rubbing surfaces in microengines was developed. The root causes of failure for operating and non-operating MEMS are discussed. The major failure mechanism for operating MEMS was wear of the polysilicon rubbing surfaces. Reliability design rules for future MEMS devices are established.

Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, we will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF6, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleans prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.