Publications

Proposed for publication in the Journal of Microelectromechanical Systems.

Fleming, J.G.; Blain, Matthew G.; Mani, Seethambal S.

Abstract not provided.

McCormick, Frederick B.; Peters, D.W.; Watts, Michael W.; Sweatt, W.C.; Hudgens, James J.; Fleming, J.G.; Mani, Seethambal S.; Tuck, Melanie R.; Williams, John D.; Subramania, Ganapathi S.; Verley, Jason V.; Ellis, A.R.; El-Kady, I.

Abstract not provided.

Blain, Matthew G.; Cruz, Dolores C.; Fleming, J.G.

The design, simulation, fabrication, packaging, electrical characterization and testing analysis of a microfabricated a cylindrical ion trap ({mu}CIT) array is presented. Several versions of microfabricated cylindrical ion traps were designed and fabricated. The final design of the individual trap array element consisted of two end cap electrodes, one ring electrode, and a detector plate, fabricated in seven tungsten metal layers by molding tungsten around silicon dioxide (SiO{sub 2}) features. Each layer of tungsten is then polished back in damascene fashion. The SiO{sub 2} was removed using a standard release processes to realize a free-hung structure. Five different sized traps were fabricated with inner radii of 1, 1.5, 2, 5 and 10 {micro}m and heights ranging from 3-24 {micro}m. Simulations examined the effects of ion and neutral temperature, the pressure and nature of cooling gas, ion mass, trap voltage and frequency, space-charge, fabrication defects, and other parameters on the ability of micrometer-sized traps to store ions. The electrical characteristics of the ion trap arrays were determined. The capacitance was 2-500 pF for the various sized traps and arrays. The resistance was in the order of 1-2 {Omega}. The inductance of the arrays was calculated to be 10-1500 pH, depending on the trap and array sizes. The ion traps' field emission characteristics were assessed. It was determined that the traps could be operated up to 125 V while maintaining field emission currents below 1 x 10{sup -15} A. The testing focused on using the 5-{micro}m CITs to trap toluene (C{sub 7}H{sub 8}). Ion ejection from the traps was induced by termination of the RF voltage applied to the ring electrode and current measured on the collector electrode suggested trapping of ions in 1-10% of the traps. Improvements to the to the design of the traps were defined to minimize voltage drop to the substrate, thereby increasing trapping voltage applied to the ring electrode, and to allow for electron injection into, ion ejection from, and optical access to the trapping region.

Proposed for publication in Physical Review B.

Chow, Weng W.; El-Kady, I.; Fleming, J.G.

Abstract not provided.

Koudelka, Robert K.; Fleming, J.G.; El-Kady, I.

Abstract not provided.

Fleming, J.G.

Abstract not provided.

El-Kady, I.; Fleming, J.G.; Subramania, Ganapathi S.; Williams, John D.; Sweatt, W.C.

Abstract not provided.

Fleming, J.G.

Abstract not provided.

Proposed for publication in Optics Letters.

Fleming, J.G.

A three-dimensional tungsten photonic crystal is thermally excited and shown to emit light at a narrow band, {lambda} = 3.3-4.25 {micro}m. The emission is experimentally observed to exceed that of the free-space Planck radiation over a wide temperature range, T = 475-850 K. it is proposed that an enhanced density of state associated with the propagating electromagnetic Bloch waves in the photonic crystal is responsible for this experimental finding.

Dyck, Christopher D.; Stewart, Harold D.; Fleming, J.G.; Stevens, James E.; Nordquist, Christopher N.

Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.

Applied Physics Letters

Seager, Carleton H.; Sinclair, Michael B.; Fleming, J.G.

Abstract not provided.

Fleming, J.G.; Fleming, J.G.; Lin, Shawn-Yu L.

In this work we have demonstrated the fabrication of two different classes of devices which demonstrate the integration of simple MEMS structures with photonics structures. In the first class of device a suspended, movable Si waveguide was designed and fabricated. This waveguide was designed to be able to be actuated so that it could be brought into close proximity to a ring resonator or similar structure. In the course of this work we also designed a technique to improve the input coupling to the waveguide. While these structures were successfully fabricated, post fabrication and testing involved a significant amount of manipulation of the devices and due to their relatively flimsy nature our structures could not readily survive this extra handling. As a result we redesigned our devices so that instead of moving the waveguides themselves we moved a much smaller optical element into close proximity to the waveguides. Using this approach it was also possible to fabricate a much larger array of actively switched photonic devices: switches, ring resonators, couplers (which act as switches or splitters) and attenuators. We successfully fabricated all these structures and were able to successfully demonstrate splitters, switches and attenuators. The quality of the SiN waveguides fabricated in this work were found to be qualitatively compatible to those made using semiconductor materials.

Proceedings of SPIE - The International Society for Optical Engineering

Lin, Shawn-Yu L.; Fleming, J.G.

A review is given on the recent progress in three-dimensional (3D) all-metallic photonic-crystals in the near- and mid-infrared wavelengths. Results of optical spectroscopy of the sample will be described. Unique light emission characteristics at a narrow band from the photonic-crystal will also be presented. This new class of 3D all-metallic photonic-crystal is promising for thermal photo-voltaic power generation and for lighting application.

Burns, A.R.; Burns, A.R.; Fleming, J.G.; Swartzentruber, Brian S.

We present our research results on membrane pores. The study was divided into two primary sections. The first involved the formation of protein pores in free-standing lipid bilayer membranes. The second involved the fabrication via surface micromachining techniques and subsequent testing of solid-state nanopores using the same characterization apparatus and procedures as that used for the protein pores. We were successful in our ability to form leak-free lipid bilayers, to detect the formation of single protein pores, and to monitor the translocation dynamics of individual homogeneous 100 base strands of DNA. Differences in translocation dynamics were observed when the base was switched from adenine to cytosine. The solid state pores (2-5 nm estimated) were fabricated in thin silicon nitride membranes. Testing of the solid sate pores indicated comparable currents for the same size protein pore with excellent noise and sensitivity. However, there were no conditions under which DNA translocation was observed. After considerable effort, we reached the unproven conclusion that multiple (<1 nm) pores were formed in the nitride membrane, thus explaining both the current sensitivity and the lack of DNA translocation blockages.

Optics Letters

Lin, Shawn-Yu L.; Fleming, J.G.; El-Kady, I.

For what is believed to be the first time, a three-dimensional tungsten photonic crystal is demonstrated to emit light effectively at wavelength λ = 1.5 μm. At a bias of V = 7 V, the thermal emission exhibits a full width at half-maximum of Δλ = 0.85 μm. Within this narrow band, the emitted optical power is 4.5 W and the electrical-to-optical conversion efficiency is ∼22% per emitting surface. This unique emission is made possible by a large, absolute bandgap in the infrared A and flat photonic dispersion near the band edges and in a narrow absorption band. © 2003 Optical Society of America.

Applied Physics Letters

Lin, Shawn-Yu L.; Moreno, J.; Fleming, J.G.

Three-dimensional photonic-crystal emitter for thermal photovoltaic power generation was studied. The photonic crystal, at 1535 K, exhibited a sharp emission at λ∼1.5 μm and was promising for thermal photovoltaic (TPV) generation. It was shown that an optical-to-electric conversion efficiency of ∼34% and electrical power of ∼14 W/cm2 is possible.

Lin, Shawn-Yu L.; Fleming, J.G.; Moreno, Joseph A.

Thermophotovoltaics (TPV) converts the radiant energy of a thermal source into electrical energy using photovoltaic cells. TPV has a number of attractive features, including: fuel versatility (nuclear, fossil, solar, etc.), quiet operation, low maintenance, low emissions, light weight, high power density, modularity, and possibility for cogeneration of heat and electricity. Some of these features are highly attractive for military applications (Navy and Army). TPV could also be used for distributed power and automotive applications wherever fuel cells, microturbines, or cogeneration are presently being considered if the efficiencies could be raised to around 30%. This proposal primarily examine approaches to improving the radiative efficiency. The ideal irradiance for the PV cell is monochromatic illumination at the bandgap. The photonic crystal approach allows for the tailoring of thermal emission spectral bandwidth at specific wavelengths of interest. The experimental realization of metallic photonic crystal structures, the optical transmission, reflection and absorption characterization of it have all been carried out in detail and will be presented next. Additionally, comprehensive models of TPV conversion has been developed and applied to the metallic photonic crystal system.

Fleming, J.G.; Lin, Shawn-Yu L.; Mani, Seethambal S.; Sniegowski, Jeffry J.; Rodgers, Murray S.; Dagel, Daryl D.

This report outlines our work on the integration of high efficiency photonic lattice structures with MEMS (MicroElectroMechanical Systems). The simplest of these structures were based on 1-D mirror structures. These were integrated into a variety of devices, movable mirrors, switchable cavities and finally into Bragg fiber structures which enable the control of light in at least 2 dimensions. Of these devices, the most complex were the Bragg fibers. Bragg fibers consist of hollow tubes in which light is guided in a low index media (air) and confined by surrounding Bragg mirror stacks. In this work, structures with internal diameters from 5 to 30 microns have been fabricated and much larger structures should also be possible. We have demonstrated the fabrication of these structures with short wavelength band edges ranging from 400 to 1600nm. There may be potential applications for such structures in the fields of integrated optics and BioMEMS. We have also looked at the possibility of waveguiding in 3 dimensions by integrating defects into 3-dimensional photonic lattice structures. Eventually it may be possible to tune such structures by mechanically modulating the defects.

Proposed for publication in Science journal.

Lin, Shawn-Yu L.; Fleming, J.G.

Abstract not provided.

Lin, Shawn-Yu L.; Fleming, J.G.; Lyo, S.K.

Photonic crystals are periodically engineered ''materials'' which are the photonic analogues of electronic crystals. Much like electronic crystal, photonic crystal materials can have a variety of crystal symmetries, such as simple-cubic, closed-packed, Wurtzite and diamond-like crystals. These structures were first proposed in late 1980's. However, due mainly to fabrication difficulties, working photonic crystals in the near-infrared and visible wavelengths are only just emerging. In this article, we review the construction of two- and three-dimensional photonic crystals of different symmetries at infrared and optical wavelengths using advanced semiconductor processing. We further demonstrate that this process lends itself to the creation of line defects (linear waveguides) and point defects (micro-cavities), which are the most basic building blocks for optical signal processing, filtering and routing.

Casalnuovo, Stephen A.; Mani, Seethambal S.; Mitchell, Christine C.; Mitchell, Christine C.; Waldrip, Karen E.; Guilinger, Terry R.; Kelley, Michael J.; Fleming, J.G.; Follstaedt, D.M.; Wampler, William R.

This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have been identified to be (1) The growth and defect control of AlGaN and GaN, and (2) strain relief during/after the heteroepitaxy of GaN on Si and the separation/transfer of GaN layers to different wafer templates.

Materials Research Society Symposium - Proceedings

Mani, S.S.; Fleming, J.G.; Sniegowski, Jeffry J.; De Boer, Maarten P.; Irwin, L.W.; Walraven, J.A.; Tanner, D.M.; La Van, D.A.

Two major problems associated with Si-based MEMS (MicroElectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, we will present a CVD (Chemical Vapor Deposition) process that selectively coats MEMS devices with tungsten and significantly enhances device durability. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable. This selective deposition process results in a very conformal coating and can potentially address both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through the silicon reduction of WF6. The self-limiting nature of this selective. We deposition process ensures the consistency necessary for process control. The tungsten is deposited after the removal of the sacrificial oxides to minimize stress and process integration problems. Tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. The wear resistance of selectively coated W parts has been shown to be significantly improved on microengine test structures.

Proceedings of SPIE - The International Society for Optical Engineering

Walraven, J.A.; Mani, Seethambal S.; Fleming, J.G.; Headley, Thomas J.; Kotula, Paul G.; Pimentel, Alejandro A.; Rye, Michael J.; Tanner, Danelle M.; Smith, Norman F.

Failure analysis (FA) tools have been applied to analyze tungsten coated polysilicon microengines. These devices were stressed under accelerated conditions at ambient temperatures and pressure. Preliminary results illustrating the failure modes of microengines operated under variable humidity and ultra-high drive frequency will also be shown. Analysis of tungsten coated microengines revealed the absence of wear debris in microengines operated under ambient conditions. Plan view imaging of these microengines using scanning electron microscopy (SEM) revealed no accumulation of wear debris on the surface of the gears or ground plane on microengines operated under standard laboratory conditions. Friction bearing surfaces were exposed and analyzed using the focused ion beam (FIB). These cross sections revealed no accumulation of debris along friction bearing surfaces. By using transmission electron microscopy (TEM) in conjunction with electron energy loss spectroscopy (EELS), we were able to identify the thickness, elemental analysis, and crystallographic properties of tungsten coated MEMS devices. Atomic force microscopy was also utilized to analyze the surface roughness of friction bearing surfaces.

Fleming, J.G.; Lin, Shawn-Yu L.

Resonance Tunneling Diodes (RTDs) are devices that can demonstrate very high-speed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. The authors report here the first demonstration of SiO{sub 2}-Si-SiO{sub 2} RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

Mani, Seethambal S.; Jakubczak, Jerome F.; Fleming, J.G.; Walraven, J.A.; Sniegowski, Jeffry J.; De Boer, Maarten P.; Irwin, Lloyd W.; Dugger, Michael T.

Two major problems associated with Si-based MEMS (MicroElectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors present a CVD (Chemical Vapor Deposition) process that selectively coats MEMS devices with tungsten and significantly enhances device durability. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable. This selective deposition process results in a very conformal coating and can potentially address both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through the silicon reduction of WF{sub 6}. The self-limiting nature of the process ensures consistent process control. The tungsten is deposited after the removal of the sacrificial oxides to minimize stress and process integration problems. The tungsten coating adheres well and is hard and conducting, which enhances performance for numerous devices. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release adhered parts that are contacted over small areas such as dimples. The wear resistance of tungsten coated parts has been shown to be significantly improved by microengine test structures.