The continuous wave operation of 1.3 μm vertical cavity surface emitting laser (VCSEL) grown on GaAs substrates is achieved up to 55 °C, as motivated by demands of emerging VCSEL network applications. These VCSELs employ the mature AlGaAs/GaAs distributed Bragg reflector mirror technology, including selective oxidation for efficient cavity designs. By incorporating a tunnel junction near the optical cavity, both mirrors are doped n-type, which provides the benefits of low optical loss.
Selectively oxidized vertical cavity lasers emitting at 1294 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave at and above room temperature. The lasers employ two n-type Al{sub 0.94}Ga{sub 0.06}As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55 C. These lasers exhibit the longest wavelength reported to date for vertical cavity surface emitting lasers grown on GaAs substrates.
The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecule beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer, strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 {mu}m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb vs GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in non-ideal interfaces under certain growth conditions. At low injection currents, double heterostructure lasers with GaAsSb/InGaAs bilayer quantum well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities as low as 120 A/cm{sup 2} at 1.17 {mu}m, and 2.1 kA/cm{sup 2} at 1.21 {mu}m.
The variation of the value of the linewidth of an excitonic transition in InGaAsN alloys (1% and 2% nitrogen) as a function of hydrostatic pressure using photoluminescence spectroscopy is studied at 4 K. The excitonic linewidth increases as a function of pressure until about 100 kbar after which it tends to saturate. This pressure dependent excitonic linewidth is used to derive the pressure variation of the exciton reduced mass using a theoretical formalism based on the premise that the broadening of the excitonic transition is caused primarily by compositional fluctuations in a completely disordered alloy. The linewidth derived ambient pressure masses are compared and found to be in agreement with other mass measurements. The variation of this derived mass is compared with the results from a nearly first-principles approach in which calculations based on the local density approximation to the Kohn-Sham density functional theory are corrected using a small amount of experimental input.