Publications

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Silicon usage in fixed, flat-panel photovoltaic systems can be reduced by 60 to 75% with no efficiency loss through use of arrays of mini-concentrators. These concentrators are simple trough-like reflectors that are formed in flat sheets of ~1- mm thick optical plastic. Concentration ratios of 2.55X can be achieved on rooftops and 4.0X on walls while collecting all of the direct sun and scattered skylight. The concentrators are fabricated in optical plastic— preferably polycarbonate for its high refractive index. The panels are typically 1mm thick so the weight of a panel is ~1kg/m². In addition to the rooftop, wall and window blind designs, a design is proposed that can be tilted toward the sun position at the equinox. These systems are all designed so they can be mass-produced.

Microsystems Enabled Photovoltaics (MEPV) is a relatively new field that uses microsystems tools and manufacturing techniques familiar to the semiconductor industry to produce microscale photovoltaic cells. The miniaturization of these PV cells creates new possibilities in system designs that can be used to reduce costs, enhance functionality, improve reliability, or some combination of all three. In this article, we introduce analytical tools and techniques to estimate the costs associated with a hybrid concentrating photovoltaic system that uses multi-junction microscale photovoltaic cells and miniaturized concentrating optics for harnessing direct sunlight, and an active c-Si substrate for collecting diffuse sunlight. The overall model comprises components representing costs and profit margin associated with the PV cells, concentrating optics, balance of systems, installation, and operation. This article concludes with an analysis of the component costs with particular emphasis on the microscale PV cell costs and the associated tradeoffs between cost and performance for the hybrid CPV design.

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Microsystems-enabled photovoltaics (MEPV) can potentially meet increasing demands for light-weight, portable, photovoltaic solutions with high power density and efficiency. The study in this report examines failure analysis techniques to perform defect localization and evaluate MEPV modules. CMOS failure analysis techniques, including electroluminescence, light-induced voltage alteration, thermally-induced voltage alteration, optical beam induced current, and Seabeck effect imaging were successfully adapted to characterize MEPV modules. The relative advantages of each approach are reported. In addition, the effects of exposure to reverse bias and light stress are explored. MEPV was found to have good resistance to both kinds of stressors. The results form a basis for further development of failure analysis techniques for MEPVs of different materials systems or multijunction MEPVs. The incorporation of additional stress factors could be used to develop a reliability model to generate lifetime predictions for MEPVs as well as uncover opportunities for future design improvements.

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After years in the field, many materials suffer degradation, off-gassing, and chemical changes causing build-up of measurable chemical atmospheres. Stand-alone embedded chemical sensors are typically limited in specificity, require electrical lines, and/or calibration drift makes data reliability questionable. Along with size, these "Achilles' heels" have prevented incorporation of gas sensing into sealed, hazardous locations which would highly benefit from in-situ analysis. We report on development of an all-optical, mid-IR, fiber-optic based MEMS Photoacoustic Spectroscopy solution to address these limitations. Concurrent modeling and computational simulation are used to guide hardware design and implementation.

Microsystems-enabled photovoltaics (MEPV) has great potential to meet the increasing demands for light-weight, photovoltaic solutions with high power density and efficiency. This paper describes effective failure analysis techniques to localize and characterize nonfunctional or underperforming MEPV cells. The defect localization methods such as electroluminescence under forward and reverse bias, as well as optical beam induced current using wavelengths above and below the device band gap, are presented. The current results also show that the MEPV has good resilience against degradation caused by reverse bias stresses. © 2013 IEEE.

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