Labs Strategic Priority 6
Abstract not provided.
Publications
DOE/University of NM Advisory Board Meeting
Abstract not provided.
Overview of Microelectronics and Microsystems Technology at Sandia National Laboratories
Abstract not provided.
MESA Overview
Abstract not provided.
An Analysis of Microsystems Development at Sandia National Laboratories
Abstract not provided.
Sandia's MESA Facility: Products for Today Innovating for the Future
Abstract not provided.
Future Directions in Micro and Nanotechnologies at Sandia National Laboratories
Abstract not provided.
An Analysis of Microsystems Development at Sandia National Laboratories
Abstract not provided.
Micro and Nano Fabrication at Sandia and Selected Technology Examples
Abstract not provided.
Biosensor R&D at an Engineering Lab
Abstract not provided.
Lightweight Advanced Materials for Defense
Abstract not provided.
An Analysis of Microsystems Development at Sandia National Laboratories
Abstract not provided.
The History of MEMS at Sandia
Abstract not provided.
Copy of An Analysis of Microsystems Development at Sandia National Laboratories
Abstract not provided.
From microelectronics and MEMS to quantum computing
Abstract not provided.
SOI-Enabled MEMS Processes Lead to Novel Mechanical Optical and Atomic Physics Devices Presentation
Abstract not provided.
The MESA concept : a model for fostering multidisciplinary innovation
Abstract not provided.
SOI-Enabled MEMS Processes Lead to Novel Mechanical Optical and Atomic Physics Devices
Abstract not provided.
Emerging applications in micro and nano technologies
Abstract not provided.
Microtechnology Cluster Development A Case Study
Abstract not provided.
Micro-and nanotechnology form a manufacturing technology perspective USMA Mechnical Engineering Senior Seminar
Abstract not provided.
A Scalable Systems Approach for Critical Infrastructure Security
Critical infrastructures underpin the domestic security, health, safety and economic well being of the United States. They are large, widely dispersed, mostly privately owned systems operated under a mixture of federal, state and local government departments, laws and regulations. While there currently are enormous pressures to secure all aspects of all critical infrastructures immediately, budget realities limit available options. The purpose of this study is to provide a clear framework for systematically analyzing and prioritizing resources to most effectively secure US critical infrastructures from terrorist threats. It is a scalable framework (based on the interplay of consequences, threats and vulnerabilities) that can be applied at the highest national level, the component level of an individual infrastructure, or anywhere in between. This study also provides a set of key findings and a recommended approach for framework application. In addition, this study develops three laptop computer-based tools to assist with framework implementation-a Risk Assessment Credibility Tool, a Notional Risk Prioritization Tool, and a County Prioritization tool. This study's tools and insights are based on Sandia National Laboratories' many years of experience in risk, consequence, threat and vulnerability assessments, both in defense- and critical infrastructure-related areas.
Retention and Switching Kinetics of Protonated Gate Field Effect Transistors
Journal of Applied Physics
The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETs containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96% after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.
Retention and switching kinetics of protonated gate field effect transistors
Applied Physics Letters
The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETS containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96{percent} after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.
24 Results