Publications

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Here, we review the progress and most recent advances in phonon-polaritonics, an emerging and growing field that has brought about a range of powerful possibilities for mid- to far-infrared (IR) light. These extraordinary capabilities are enabled by the resonant coupling between the impinging light and the vibrations of the material lattice, known as phonon-polaritons (PhPs). These PhPs yield a characteristic optical response in certain materials, occurring within an IR spectral window known as the reststrahlen band. In particular, these materials transition in the reststrahlen band from a high-refractive-index behavior, to a near-perfect metal behavior, to a plasmonic behavior - typical of metals at optical frequencies. When anisotropic they may also possess unconventional photonic constitutive properties thought of as possible only with metamaterials. The recent surge in two-dimensional (2D) material research has also enabled PhP responses with atomically-thin materials. Such vast and extraordinary photonic responses can be utilized for a plethora of unusual effects for IR light. Examples include sub-diffraction surface wave guiding, artificial magnetism, exotic photonic dispersions, thermal emission enhancement, perfect absorption and enhanced near-field heat transfer. Finally, we discuss the tremendous potential impact of these IR functionalities for the advancement of IR sources and sensors, as well as for thermal management and THz-diagnostic imaging.

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We demonstrate a top-down fabrication strategy for creating a III-nitride hole array photonic crystal (PhC) with embedded quantum wells (QWs). Our photoelectrochemical (PEC) etching technique is highly bandgap selective, permitting the removal of QWs with well-defined indium (In) concentration. Room-temperature micro-photoluminescence (μ-PL) measurements confirm the removal of one multiple quantum well (MQW) while preserving a QW of differing In concentration. Moreover, PhC cavity resonances, wholly unobservable before, are present following PEC etching. Our results indicate an interesting route for creating III-nitride membranes with tailorable emission wavelengths. Our top-down fabrication approach offers exciting opportunities for III-nitride based light emitters.

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We demonstrate a new route toward the integration and deterministic placement of quantum dots (QDs) within prepatterned nanostructures. Using standard electron-beam lithography (EBL) and inductively coupled plasma reactive-ion etching (ICP-RIE), we fabricate arrays of nanowires on a III-nitride platform. Next, we integrate QDs of controlled size within the prepatterned nanowires using a bandgap-selective, wet-etching technique: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. Low-Temperature microphotoluminescence (μ-PL) measurements of individual nanowires reveal sharp spectral signatures, indicative of QD formation. Further, internal quantum efficiency (IQE) measurements reveal a near order of magnitude improvement in emitter efficiency following QSC-PEC etching. Finally, second-order cross-correlation (g(2)(0)) measurements of individual QDs directly confirm nonclassical, antibunching behavior. Our results illustrate an exciting approach toward the top-down integration of nonclassical light sources within nanophotonic platforms.

The goal of this LDRD is to develop a quantum nanophotonics capability that will allow practical control over electron (hole) and photon confinement in more than one dimension. We plan to use quantum dots (QDs) to control electrons, and photonic crystals to control photons. InGaN QDs will be fabricated using quantum size control processes, and methods will be developed to add epitaxial layers for hole injection and surface passivation. We will also explore photonic crystal nanofabrication techniques using both additive and subtractive fabrication processes, which can tailor photonic crystal properties. These two efforts will be combined by incorporating the QDs into photonic crystal surface emitting lasers (PCSELs). Modeling will be performed using finite-different time-domain and gain analysis to optimize QD-PCSEL designs that balance laser performance with the ability to nano-fabricate structures. Finally, we will develop design rules for QD-PCSEL architectures, to understand their performance possibilities and limits.

Topological photonic structures in analogy to their electronic counterparts can provide new functionalities in nanophotonics. In particular, they can possess topologically protected photonic modes that can propagate unidirectionally without scattering and can have an extreme photonic density of states (PDOS). These unique properties can directly impact many photonic systems in optical communications and in quantum information processing applications such as single photon transport. In analogy to spin Hall effect in electronics, photonic systems can exhibit helicity or pseudo-spin dependent light transport. Below we describe such a system in a honeycomb two-dimensional hole-array photonic crystal. Enabling such properties at optical frequencies and on chip-scale will be very important for practical applications of such phenomena.

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We experimentally investigate a new class of quasi-aperiodic structures for improving the emission pattern in nanowire arrays. Efficient normal emission, as well as lasing, can be obtained from III-nitride photonic crystal (PhC) nanowire arrays that utilize slow group velocity modes near the G-point in reciprocal space. However, due to symmetry considerations, the emitted far-field pattern of such modes are often 'donut'-like. Many applications, including lighting for displays or lasers, require a more uniform beam profile in the far-field. Previous work has improved far-field beam uniformity of uncoupled modes by changing the shape of the emitting structure. However, in nanowire systems, the shape of nanowires cannot always be arbitrarily changed due to growth or etch considerations. Here, we investigate breaking symmetry by instead changing the position of emitters. Using a quasi-aperiodic geometry, which changes the emitter position within a photonic crystal supercell (2x2), we are able to linearize the photonic bandstructure near the G-point and greatly improve emitted far-field uniformity. We realize the III-nitride nanowires structures using a top-down fabrication procedure that produces nanowires with smooth, vertical sidewalls. Comparison of room-temperature micro-photoluminescence (μ-PL) measurements between periodic and quasi-aperiodic nanowire arrays reveal resonances in each structure, with the simple periodic structure producing a donut beam in the emitted far-field and the quasi-aperiodic structure producing a uniform Gaussian-like beam. We investigate the input pump power vs. output intensity in both systems and observe the simple periodic array exhibiting a non-linear relationship, indicative of lasing. We believe that the quasi-aperiodic approach studied here provides an alternate and promising strategy for shaping the emission pattern of nanoemitter systems.

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The ability to achieve deterministic placement of semiconductor quantum dots (QDs) opens up interesting possibilities for nanophotonic devices. By incorporating these QDs within microcavities, light-matter interaction can be tailored and enhanced, enabling phenomenon such as spontaneous emission enhancement, low threshold lasing, single photon emission and strong-coupling. The quality of these phenomena relies on the distribution of emission wavelengths of the emitter dipoles and the strength of their coupling to internal fields of the cavity. Therefore size-controlled fabrication of QDs and their deterministic placement become quite important. In this work we will describe a photoelectrochemical-based etching of III-nitride materials to achieve QDs with uniform emission wavelength. By patterning using electron beam lithography to create a nanopost structure in an epitaxially grown III-nitride based quantum well structure, we will show potential for deterministic placement. The photoluminescence response from the nanopost structure after photoelectrochemical etching reveals sharp lines indicative of quantum dot formation.

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Subwavelength-thin metasurfaces have shown great promises for the control of optical wavefronts, thus opening new pathways for the development of efficient flat optics. In particular, Huygens’ metasurfaces based on all-dielectric resonant meta-atoms have already shown a huge potential for practical applications with their polarization insensitivity and high transmittance efficiency. Here, we experimentally demonstrate a holographic Huygens’ metasurface based on dielectric resonant meta-atoms capable of complex wavefront control at telecom wavelengths. Our metasurface produces a hologram image in the far-field with 82% transmittance efficiency and 40% imaging efficiency. Such efficient complex wavefront control shows that Huygens’ metasurfaces based on resonant dielectric meta-atoms are a big step towards practical applications of metasurfaces in wavefront design related technologies, including computer-generated holograms, ultra-thin optics, security and data storage devices.

We experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0-2 phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the lattice spacing as a single geometric control parameter.

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A wide spectrum of photonics activities Sandia is engaged in such as solid state lighting, photovoltaics, infrared imaging and sensing, quantum sources, rely on nanoscale or ultrasubwavelength light-matter interactions (LMI). The fundamental understanding in confining electromagnetic power and enhancing electric fields into ever smaller volumes is key to creating next generation devices for these programs. The prevailing view is that a resonant interaction (e.g. in microcavities or surface-plasmon polaritions) is necessary to achieve the necessary light confinement for absorption or emission enhancement. Here we propose new paradigm that is non-resonant and therefore broadband and can achieve light confinement and field enhancement in extremely small areas [~(λ/500)^2 ]. The proposal is based on a theoretical work[1] performed at Sandia. The paradigm structure consists of a periodic arrangement of connected small and large rectangular slits etched into a metal film named double-groove (DG) structure. The degree of electric field enhancement and power confinement can be controlled by the geometry of the structure. The key operational principle is attributed to quasistatic response of the metal electrons to the incoming electromagnetic field that enables non-resonant broadband behavior. For this exploratory LDRD we have fabricated some test double groove structures to enable verification of quasistatic electronic response in the mid IR through IR optical spectroscopy. We have addressed some processing challenges in DG structure fabrication to enable future design of complex sensor and detector geometries that can utilize its non-resonant field enhancement capabilities.].

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The fundamental spontaneous emission rate for a photon source can be modified by placing the emitter inside a periodic dielectric structure allowing the emission to be dramatically enhanced or suppressed depending on the intended application. We have investigated the relatively unexplored realm of interaction between semiconductor emitters and three dimensional photonic crystals in the visible spectrum. Although this interaction has been investigated at longer wavelengths, very little work has been done in the visible spectrum. During the course of this LDRD, we have fabricated TiO{sub 2} logpile photonic crystal structures with the shortest wavelength band gap ever demonstrated. A variety of different emitters with emission between 365 nm and 700 nm were incorporated into photonic crystal structures. Time-integrated and time-resolved photoluminescence measurements were performed to measure changes to the spontaneous emission rate. Both enhanced and suppressed emission were demonstrated and attributed to changes to the photonic density of states.

Ultrafast electronic switches fabricated from defective material have been used for several decades in order to produce picosecond electrical transients and TeraHertz radiation. Due to the ultrashort recombination time in the photoconductor materials used, these switches are inefficient and are ultimately limited by the amount of optical power that can be applied to the switch before self-destruction. The goal of this work is to create ultrafast (sub-picosecond response) photoconductive switches on GaAs that are enhanced through plasmonic coupling structures. Here, the plasmonic coupler primarily plays the role of being a radiation condenser which will cause carriers to be generated adjacent to metallic electrodes where they can more efficiently be collected.

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The three-dimensional confinement inherent in InAs self-assembled quantum dots (SAQDs) yields vastly different optical properties compared to one-dimensionally confined quantum well systems. Intersubband transitions in quantum dots can emit light normal to the growth surface, whereas transitions in quantum wells emit only parallel to the surface. This is a key difference that can be exploited to create a variety of quantum dot devices that have no quantum well analog. Two significant problems limit the utilization of the beneficial features of SAQDs as mid-infrared emitters. One is the lack of understanding concerning how to electrically inject carriers into electronic states that allow optical transitions to occur efficiently. Engineering of an injector stage leading into the dot can provide current injection into an upper dot state; however, to increase the likelihood of an optical transition, the lower dot states must be emptied faster than upper states are occupied. The second issue is that SAQDs have significant inhomogeneous broadening due to the random size distribution. While this may not be a problem in the long term, this issue can be circumvented by using planar photonic crystal or plasmonic approaches to provide wavelength selectivity or other useful functionality.

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Artificially structured photonic lattice materials are commonly investigated for their unique ability to block and guide light. However, an exciting aspect of photonic lattices which has received relatively little attention is the extremely high refractive index dispersion within the range of frequencies capable of propagating within the photonic lattice material. In fact, it has been proposed that a negative refractive index may be realized with the correct photonic lattice configuration. This report summarizes our investigation, both numerically and experimentally, into the design and performance of such photonic lattice materials intended to optimize the dispersion of refractive index in order to realize new classes of photonic devices.

High-quality-factor microcavities in two-dimensional photonic crystals at optical frequencies have a number of technological applications, such as cavity quantum electrodynamics, optical switching, filtering, and wavelength multiplexing. For such applications, it is useful to have a simple approach to tune the microcavity resonant wavelength. In this letter, we propose a microcavity design by which we can tune the resonant wavelength by changing the cavity geometry while still obtaining a high quality factor.