Publications

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

Abstract not provided.

A previous LDRD studying radiation hardened optoelectronic components for space-based applications led to the result that increased neutron irradiation from a fast-burst reactor caused increased responsivity in GaAs photodiodes up to a total fluence of 4.4 x 10{sup 13} neutrons/cm{sup 2} (1 MeV Eq., Si). The silicon photodiodes experienced significant degradation. Scientific literature shows that neutrons can both cause defects as well as potentially remove defects in an annealing-like process in GaAs. Though there has been some modeling that suggests how fabrication and radiation-induced defects can migrate to surfaces and interfaces in GaAs and lead to an ordering effect, it is important to consider how these processes affect the performance of devices, such as the basic GaAs p-i-n photodiode. In this LDRD, we manufactured GaAs photodiodes at the MESA facility, irradiated them with electrons and neutrons at the White Sands Missile Range Linac and Fast Burst Reactor, and performed measurements to show the effect of irradiation on dark current, responsivity and high-speed bandwidth.

This report describes the research accomplishments achieved under the LDRD Project ''Leaky-mode VCSELs for photonic logic circuits''. Leaky-mode vertical-cavity surface-emitting lasers (VCSELs) offer new possibilities for integration of microcavity lasers to create optical microsystems. A leaky-mode VCSEL output-couples light laterally, in the plane of the semiconductor wafer, which allows the light to interact with adjacent lasers, modulators, and detectors on the same wafer. The fabrication of leaky-mode VCSELs based on effective index modification was proposed and demonstrated at Sandia in 1999 but was not adequately developed for use in applications. The aim of this LDRD has been to advance the design and fabrication of leaky-mode VCSELs to the point where initial applications can be attempted. In the first and second years of this LDRD we concentrated on overcoming previous difficulties in the epitaxial growth and fabrication of these advanced VCSELs. In the third year, we focused on applications of leaky-mode VCSELs, such as all-optical processing circuits based on gain quenching.

This report describes the research accomplishments achieved under the LDRD Project 'Radiation Hardened Optoelectronic Components for Space-Based Applications.' The aim of this LDRD has been to investigate the radiation hardness of vertical-cavity surface-emitting lasers (VCSELs) and photodiodes by looking at both the effects of total dose and of single-event upsets on the electrical and optical characteristics of VCSELs and photodiodes. These investigations were intended to provide guidance for the eventual integration of radiation hardened VCSELs and photodiodes with rad-hard driver and receiver electronics from an external vendor for space applications. During this one-year project, we have fabricated GaAs-based VCSELs and photodiodes, investigated ionization-induced transient effects due to high-energy protons, and measured the degradation of performance from both high-energy protons and neutrons.

With the build-out of large transport networks utilizing optical technologies, more and more capacity is being made available. Innovations in Dense Wave Division Multiplexing (DWDM) and the elimination of optical-electrical-optical conversions have brought on advances in communication speeds as we move into 10 Gigabit Ethernet and above. Of course, there is a need to encrypt data on these optical links as the data traverses public and private network backbones. Unfortunately, as the communications infrastructure becomes increasingly optical, advances in encryption (done electronically) have failed to keep up. This project examines the use of optical logic for implementing encryption in the photonic domain to achieve the requisite encryption rates. In order to realize photonic encryption designs, technology developed for electrical logic circuits must be translated to the photonic regime. This paper examines two classes of all optical logic (SEED, gain competition) and how each discrete logic element can be interconnected and cascaded to form an optical circuit. Because there is no known software that can model these devices at a circuit level, the functionality of the SEED and gain competition devices in an optical circuit were modeled in PSpice. PSpice allows modeling of the macro characteristics of the devices in context of a logic element as opposed to device level computational modeling. By representing light intensity as voltage, 'black box' models are generated that accurately represent the intensity response and logic levels in both technologies. By modeling the behavior at the systems level, one can incorporate systems design tools and a simulation environment to aid in the overall functional design. Each black box model of the SEED or gain competition device takes certain parameters (reflectance, intensity, input response), and models the optical ripple and time delay characteristics. These 'black box' models are interconnected and cascaded in an encrypting/scrambling algorithm based on a study of candidate encryption algorithms. We found that a low gate count, cascadable encryption algorithm is most feasible given device and processing constraints. The modeling and simulation of optical designs using these components is proceeding in parallel with efforts to perfect the physical devices and their interconnect. We have applied these techniques to the development of a 'toy' algorithm that may pave the way for more robust optical algorithms. These design/modeling/simulation techniques are now ready to be applied to larger optical designs in advance of our ability to implement such systems in hardware.

This report describes the research accomplishments achieved under the LDRD Project ''High-Bandwidth Optical Data Interconnects for Satellite Applications.'' The goal of this LDRD has been to address the future needs of focal-plane-array (FPA) sensors by exploring the use of high-bandwidth fiber-optic interconnects to transmit FPA signals within a satellite. We have focused primarily on vertical-cavity surface-emitting laser (VCSEL) based transmitters, due to the previously demonstrated immunity of VCSELs to total radiation doses up to 1 Mrad. In addition, VCSELs offer high modulation bandwidth (roughly 10 GHz), low power consumption (roughly 5 mW), and high coupling efficiency (greater than -3dB) to optical fibers. In the first year of this LDRD, we concentrated on the task of transmitting analog signals from a cryogenic FPA to a remote analog-to-digital converter. In the second year, we considered the transmission of digital signals produced by the analog-to-digital converter to a remote computer on the satellite. Specifically, we considered the situation in which the FPA, analog-to-digital converter, and VCSEL-based transmitter were all cooled to cryogenic temperatures. This situation requires VCSELs that operate at cryogenic temperature, dissipate minimal heat, and meet the electrical drive requirements in terms of voltage, current, and bandwidth.