Publications

The experimental characterization of single barrier heterostructure thermionic cooling devices at cryogenic temperatures is reported. The device studied was a cylindrical InGaAs microrefrigerator, in which the active layer was a 1 μm thick In 0.527Al 0.218Ga 0.255As heterostructure barrier with n-type doping concentration of 6.68 × 10 16 cm -3 and an In 0.53Ga 0.47As emitter/collector of 5 × 10 18 cm -3 n-doping. A full field thermoreflectance imaging technique was used to measure the distribution of temperature change on the device's top surface when different current excitation values were applied. By reversing the current direction, we studied the device's behavior in both cooling and heating regimes. At an ambient temperature of 100 K, a maximum cooling of 0.6 K was measured. This value was approximately one-third of the measured maximum cooling value at room temperature (1.8 K). The paper describes the device's structure and the first reported thermal imaging at cryogenic temperatures using the thermoreflectance technique. © 2009 The Author(s).

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The goal of our project was to examine a novel quantum cascade laser design that should inherently increase the output power of the laser while simultaneously providing a broad tuning range. Such a laser source enables multiple chemical species identification with a single laser and/or very broad frequency coverage with a small number of different lasers, thus reducing the size and cost of laser based chemical detection systems. In our design concept, the discrete states in quantum cascade lasers are replaced by minibands made of multiple closely spaced electron levels. To facilitate the arduous task of designing miniband-to-miniband quantum cascade lasers, we developed a program that works in conjunction with our existing modeling software to completely automate the design process. Laser designs were grown, characterized, and iterated. The details of the automated design program and the measurement results are summarized in this report.

There is a general lack of compact electromagnetic radiation sources between 1 and 10 terahertz (THz). This a challenging spectral region lying between optical devices at high frequencies and electronic devices at low frequencies. While technologically very underdeveloped the THz region has the promise to be of significant technological importance, yet demonstrating its relevance has proven difficult due to the immaturity of the area. While the last decade has seen much experimental work in ultra-short pulsed terahertz sources, many applications will require continuous wave (cw) sources, which are just beginning to demonstrate adequate performance for application use. In this project, we proposed examination of two potential THz sources based on intersubband semiconductor transitions, which were as yet unproven. In particular we wished to explore quantum cascade lasers based sources and electronic based harmonic generators. Shortly after the beginning of the project, we shifted our emphasis to the quantum cascade lasers due to two events; the publication of the first THz quantum cascade laser by another group thereby proving feasibility, and the temporary shut down of the UC Santa Barbara free-electron lasers which were to be used as the pump source for the harmonic generation. The development efforts focused on two separate cascade laser thrusts. The ultimate goal of the first thrust was for a quantum cascade laser to simultaneously emit two mid-infrared frequencies differing by a few THz and to use these to pump a non-linear optical material to generate THz radiation via parametric interactions in a specifically engineered intersubband transition. While the final goal was not realized by the end of the project, many of the completed steps leading to the goal will be described in the report. The second thrust was to develop direct THz QC lasers operating at terahertz frequencies. This is simpler than a mixing approach, and has now been demonstrated by a few groups with wavelengths spanning 65-150 microns. We developed and refined the MBE growth for THz for both internally and externally designed QC lasers. Processing related issues continued to plague many of our demonstration efforts and will also be addressed in this report.