TDDB and Pulse-Breakdown Studies of Si-Rich SiNx Antifuses and Antifuse-Based ROMs IEEE Electron Device Letters Kaplar, Robert K.; Habermehl, Scott D.; Roherty-Osmun, Elizabeth R. Abstract not provided. More Details TYPE Journal Article YEAR 2010 OSTI
Materials Aspects of Si-rich Silicon Nitrides for Use in Antifuse Nonvolatile Memories with Low Programming Voltages Kaplar, Robert K.; Roherty-Osmun, Elizabeth R.; Stein, David J. Abstract not provided. More Details TYPE Conference YEAR 2008 OSTI