Qualification of a Calibration System for 3458A Digital Multimeters
Abstract not provided.
Publications
Potential Impact of WBG and UWBG Devices on Realizing Radiation-Hard POwer Electronics
Abstract not provided.
Uncertainty Analysis of an Electric Field Mill Calibration System
Abstract not provided.
Basic Mechanisms (session chair slides)
Abstract not provided.
Uncertainty Analysis of an Electric Field Mill Calibration System
Abstract not provided.
Imaging Single Collision Cascades with Nanobeam IBIC
Abstract not provided.
The anatomy of the minority carrier - atomic cluster interaction in semiconductors
This project was to use light ion beam induced charge (IBIC) to detect damage cascades generated by a single heavy ion, and thereby reveal details of the shape of the cascade and the physics of recombination of carriers that interact with the cluster. Further IBIC measurements using the hardware and software of this project will improve the accuracy of theoretical models used to predict electrical degradation in devices exposed to radiation environments. In addition, future use of light ion IBIC detection of single ion-induced damage could be used to locate single ion implantation sites in quantum computing applications. This project used Sandia's Pelletron and nanoImplanter (nI) to produce heavy ion-induced collision cascades in p-n diodes, simulating cascades made by primary knock-on atoms recoiled by neutrons. Si and Li beams from the nI were used to perform highly focused scans generating IBIC signal maps where regions of lower charge collection efficiency were observed without incurring further damage. The very first use of ion channeled beams for IBIC was explored to maximize ionization, improve contrast and provide very straight line trajectories to improve lateral resolution.
In situ study of surface-mediated explosive degradation using Heterodyne IR-Vis Sum Frequency Generation (HSFG)
Abstract not provided.
Sub-Micron Resolution of Localized Ion Beam Induced Charge Reduction in Silicon Detectors Damaged by Heavy Ions
IEEE Transactions on Nuclear Science
Displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keVions focused in a 40 nm beam spot are used to create damage cascades within areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of {200 ions and 60 keV ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.
Automated detection of single particle-induced gain degradation in irradiated heterojunction bipolar transistors
Abstract not provided.
In situ study of surface-mediated explosive degradation using Heterodyne IR-Vis Sum Frequency Generation
Abstract not provided.
Single Ion Displacement Effects in Heterojunction Bipolar Transistors
Abstract not provided.
Radiation Effects in Electronics
Abstract not provided.
Single Ion Displacement Effects in III-V Heterojunction Bipolar Transistors
Abstract not provided.
Sub-Micron Resolution of Localized Ion Beam Induced Charge Reduction in Silicon Detectors Damaged by Heavy Ions
Abstract not provided.
Charge Collection Imaging of Single Collision Cascades Using Nanobeam IBIC
Abstract not provided.
Partially depleted GaAs photodiodes degrade with square root of fluence
Abstract not provided.
Probing the structure of damage cascades with ion beam induced charge (IBIC)
Abstract not provided.
A Low Noise Detection Circuit for Probing the Structure of Damage Cascades with IBIC
Abstract not provided.
A Low Noise Detection Circuit for Probing the Structure of Damage Cascades with IBIC
Abstract not provided.
20 Results