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Simultaneous thickness and thermal conductivity measurements of thinned silicon from 100 nm to 17 μ m

Applied Physics Letters

Scott, Ethan A.; Perez, Christopher P.; Saltonstall, Christopher B.; Adams, David P.; Carter Hodges, V.; Asheghi, Mehdi; Goodson, Kenneth E.; Hopkins, Patrick E.; Leonhardt, Darin L.; Ziade, Elbara Z.

Studies of size effects on thermal conductivity typically necessitate the fabrication of a comprehensive film thickness series. In this Letter, we demonstrate how material fabricated in a wedged geometry can enable similar, yet higher-throughput measurements to accelerate experimental analysis. Frequency domain thermoreflectance (FDTR) is used to simultaneously determine the thermal conductivity and thickness of a wedged silicon film for thicknesses between 100 nm and 17 μm by considering these features as fitting parameters in a thermal model. FDTR-deduced thicknesses are compared to values obtained from cross-sectional scanning electron microscopy, and corresponding thermal conductivity measurements are compared against several thickness-dependent analytical models based upon solutions to the Boltzmann transport equation. Our results demonstrate how the insight gained from a series of thin films can be obtained via fabrication of a single sample.

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Thermal conductivity of (Ge2Sb2Te5)1–xCx phase change films

Journal of Applied Physics

Scott, Ethan A.; Ziade, Elbara Z.; Saltonstall, Christopher B.; McDonald, Anthony E.; Rodriguez, Mark A.; Hopkins, Patrick E.; Beechem, Thomas E.; Adams, David P.

Germanium–antimony–telluride has emerged as a nonvolatile phase change memory material due to the large resistivity contrast between amorphous and crystalline states, rapid crystallization, and cyclic endurance. Improving thermal phase stability, however, has necessitated further alloying with optional addition of a quaternary species (e.g., C). In this work, the thermal transport implications of this additional species are investigated using frequency-domain thermoreflectance in combination with structural characterization derived from x-ray diffraction and Raman spectroscopy. Specifically, the room temperature thermal conductivity and heat capacity of (Ge2Sb2Te5)1–xCx are reported as a function of carbon concentration (x ≤ 0:12) and anneal temperature (T ≤ 350 °C) with results assessed in reference to the measured phase, structure, and electronic resistivity. Phase stability imparted by the carbon comes with comparatively low thermal penalty as materials exhibiting similar levels of crystallinity have comparable thermal conductivity despite the addition of carbon. The additional thermal stability provided by the carbon does, however, necessitate higher anneal temperatures to achieve similar levels of structural order.

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13 Results
13 Results