Publications

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We present the results of a one year LDRD program that has focused on evaluating the use of newly developed deep ultraviolet LEDs in water purification. We describe our development efforts that have produced an LED-based water exposure set-up and enumerate the advances that have been made in deep UV LED performance throughout the project. The results of E. coli inactivation with 270-295 nm LEDs are presented along with an assessment of the potential for applying deep ultraviolet LED-based water purification to mobile point-of-use applications as well as to rural and international environments where the benefits of photovoltaic-powered systems can be realized.

We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells. Copyright © 2005 by ASME.

Time domain reflectometry (TDR) operates by propagating a radar frequency electromagnetic pulse down a transmission line while monitoring the reflected signal. As the electromagnetic pulse propagates along the transmission line, it is subject to impedance by the dielectric properties of the media along the transmission line (e.g., air, water, sediment), reflection at dielectric discontinuities (e.g., air-water or water-sediment interface), and attenuation by electrically conductive materials (e.g., salts, clays). Taken together, these characteristics provide a basis for integrated stream monitoring; specifically, concurrent measurement of stream stage, channel profile and aqueous conductivity. Here, we make novel application of TDR within the context of stream monitoring. Efforts toward this goal followed three critical phases. First, a means of extracting the desired stream parameters from measured TDR traces was required. Analysis was complicated by the fact that interface location and aqueous conductivity vary concurrently and multiple interfaces may be present at any time. For this reason a physically based multisection model employing the S11 scatter function and Cole-Cole parameters for dielectric dispersion and loss was developed to analyze acquired TDR traces. Second, we explored the capability of this multisection modeling approach for interpreting TDR data acquired from complex environments, such as encountered in stream monitoring. A series of laboratory tank experiments were performed in which the depth of water, depth of sediment, and conductivity were varied systematically. Comparisons between modeled and independently measured data indicate that TDR measurements can be made with an accuracy of {+-}3.4x10{sup -3} m for sensing the location of an air/water or water/sediment interface and {+-}7.4% of actual for the aqueous conductivity. Third, monitoring stations were sited on the Rio Grande and Paria rivers to evaluate performance of the TDR system under normal field conditions. At the Rio Grande site (near Central Bridge in Albuquerque, New Mexico) continuous monitoring of stream stage and aqueous conductivity was performed for 6 months. Additionally, channel profile measurements were acquired at 7 locations across the river. At the Paria site (near Lee's Ferry, Arizona) stream stage and aqueous conductivity data were collected over a 4-month period. Comparisons drawn between our TDR measurements and USGS gage data indicate that the stream stage is accurate within {+-}0.88 cm, conductivity is accurate within {+-}11% of actual, and channel profile measurements agree within {+-}1.2 cm.

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The quality of low-cost multicrystalline silicon (mc-Si) has improved to the point that it forms approximately 50% of the worldwide photovoltaic (PV) power production. The performance of commercial mc-Si solar cells still lags behind c-Si due in part to the inability to texture it effectively and inexpensively. Surface texturing of mc-Si has been an active field of research. Several techniques including anodic etching [1], wet acidic etching [2], lithographic patterning [3], and mechanical texturing [4] have been investigated with varying degrees of success. To date, a cost-effective technique has not emerged.

The Sandia Photovoltaic Program conducted research in crystalline-silicon solar cells between 1986 and 2000 for the U.S. Department of Energy. This period saw rapid improvements in the fundamental understanding of c-Si materials and devices, improvements in c-Si PV manufacturing and control, and a rapid expansion of c-Si PV manufacturing capacity. Crystalline-silicon technology has provided the basis for PV to emerge as a serious option for global energy needs. The c-Si cell research at Sandia examined c-Si materials, devices, processing, and process integration. This report summarizes research conducted in this program over the past 15 years.

The authors have developed novel metal-assisted texturing processes that have led to optically favorable surfaces for solar cells. Large area ({approximately} 200 cm{sup 2}) uniform texturing has been achieved. The physical dimensions of the chamber limited texturing of even larger wafers. Surface contamination and residual RIE-induced damage were removed by incorporation of a complete RCA clean process followed by wet-chemical etching treatments. RIE-textured solar cells with optimized profiles providing performance comparable to the random, wet-chemically etched cells have been demonstrated. A majority of the texture profiles exhibit an enhanced IQE response in the near IR region.using scanning electron microscope measurements, they carried out a detailed analysis of the microstructure of random RIE-textured surfaces. The random microstructure represents a superposition of sub-{micro}m grating structures with a wide distribution of periods, depths, and profiles as determined by the SEM measurements. These structures were modeled using GSOLVER{trademark} software for periodic patterns. The enhanced IR response from random, RIE-textured surfaces is attributed to enhanced coupling of light into the transmitted diffraction orders. These obliquely propagating diffraction orders generate electron-hole pairs closer to the surface, thus, reducing bulk recombination losses relative to a non-scattering, planar surface with identical hemispherical reflection. The optimized texture and damage removal processes have been applied to large area (100--132 cm{sup 2}) multi-crystalline wafers. initial results have demonstrated improved performance relative to planar, control wafers. However, the texture and solar cell fabrication processes require further optimization in the RCA clean, DRE treatments, and emitter formation in order to fully realize the benefits of the low-reflection ({approximately}1-2%) textured surfaces.

The overall objectives of this program are to (1) develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

Sub-wavelength periodic texturing (gratings) of crystalline-silicon (c-Si) surfaces for solar cell applications can be designed for maximizing optical absorption in thin c-Si films. We have investigated c-Si grating structures using rigorous modeling, hemispherical reflectance, and internal quantum efficiency measurements. Model calculations predict almost {approximately}100% energy coupling into obliquely propagating diffraction orders. By fabrication and optical characterization of a wide range of 1D & 2D c-Si grating structures, we have achieved broad-band, low ({approximately} 5%) reflectance without an anti-reflection film. By integrating grating structures into conventional solar cell designs, we have demonstrated short-circuit current density enhancements of 3.4 and 4.1 mA/cm{sup 2} for rectangular and triangular 1D grating structures compared to planar controls. The effective path length enhancements due to these gratings were 2.2 and 1.7, respectively. Optimized 2D gratings are expected to have even better performance.

The Xyce{trademark} Parallel Electronic Simulator has been written to support the simulation needs of the Sandia National Laboratories electrical designers. As such, the development has focused on providing the capability to solve extremely large circuit problems by supporting large-scale parallel computing platforms (up to thousands of processors). In addition, they are providing improved performance for numerical kernels using state-of-the-art algorithms, support for modeling circuit phenomena at a variety of abstraction levels and using object-oriented and modern coding-practices that ensure the code will be maintainable and extensible far into the future. The code is a parallel code in the most general sense of the phrase--a message passing parallel implementation--which allows it to run efficiently on the widest possible number of computing platforms. These include serial, shared-memory and distributed-memory parallel as well as heterogeneous platforms. Furthermore, careful attention has been paid to the specific nature of circuit-simulation problems to ensure that optimal parallel efficiency is achieved even as the number of processors grows.

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The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

In this paper, the authors examined the areas in c-Si growth, materials, and processing that require improvement through research to overcome barriers to the implementation of the photovoltaic road maps's Si goals. To obtain PV module throughput to the roadmap target of 200 MW/factory/year, the typical Si PV factory must produce >4,000 m{sup 2}/day of silicon.

Hemispherical reflectance and internal quantum efficiency measurements have been employed to evaluate the response of Si nanostructured surfaces formed by using random and periodic reactive ion etching techniques. Random RIE-textured surfaces have demonstrated solar weighted reflectance of {approx} 3% over 300--1,200-nm spectral range even without the benefit of anti-reflection films. Random RIE-texturing has been found to be applicable over large areas ({approximately} 180 cm{sup 2}) of both single and multicrystalline Si surfaces. Due to the surface contamination and plasma-induced damage, RIE-textured surfaces did not initially provide increased short circuit current as expected from the enhanced absorption. Improved processing combined with wet-chemical damage removal etches resulted in significant improvement in the short circuit current with IQEs comparable to the random, wet-chemically textured surfaces. An interesting feature of the RIE-textured surfaces was their superior performance in the near IR spectral range. The response of RIE-textured periodic surfaces can be broadly classified into three distinct regimes. One-dimensional grating structures with triangular profiles are characterized by exceptionally low, polarization-independent reflective behavior. The reflectance response of such surfaces is similar to a graded-index anti-reflection film. The IQE response from these surfaces is severely degraded in the UV-Visible spectral region due to plasma-induced surface damage. One-dimensional grating structures with rectangular profiles exhibit spectrally selective absorptive behavior with somewhat similar IQE response. The third type of grating structure combines broadband anti-reflection behavior with significant IQE enhancement in 800--1,200-nm spectral region. The hemispherical reflectance of these 2D grating structures is comparable to random RIE-textured surfaces. The IQE enhancement in the long wavelength spectral region can be attributed to increased coupling into obliquely propagating transmitted diffracted orders inside the Si substrate. Random RIE texturing techniques are expected to find widespread commercial applicability in low-cost, large-area multicrystalline Si solar cells. Grating-texturing techniques are expected to find applications in thin-film and space solar cells.

Multicrystalline Si (mc-Si) cells have not benefited from the cost-effective wet-chemical texturing processes that reduce front surface reflectance on single-crystal wafers. We developed a maskless plasma texturing technique for mc-Si cells using Reactive Ion Etching (RIE) that results in much higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while reducing front reflectance to extremely low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 11% on monocrystalline Si and 2.5% on multicrystalline Si cells.