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Vizkelethy, Gyorgy V.; Bielejec, Edward S.; King, Donald B.; Patrizi, G.A.
Abstract not provided.
Aguirre, Brandon A.; Vaandrager, Bastiaan L.; Grossetete, Grant G.; Vizkelethy, Gyorgy V.; Bielejec, Edward S.; Patrizi, G.A.; King, Donald B.
Abstract not provided.
Auden, Elizabeth C.; Bielejec, Edward S.; Wampler, William R.; King, Donald B.; Aguirre, Brandon A.; Vizkelethy, Gyorgy V.; Doyle, Barney L.
Abstract not provided.
Vizkelethy, Gyorgy V.; Bielejec, Edward S.; Auden, Elizabeth C.; Aguirre, Brandon A.; King, Donald B.; Patrizi, G.A.
Abstract not provided.
Bielejec, Edward S.; Vizkelethy, Gyorgy V.; Aguirre, Brandon A.; Auden, Elizabeth C.; King, Donald B.; Patrizi, G.A.
Abstract not provided.
Fleming, Robert M.; Wampler, William R.; Myers, S.M.; King, Donald B.
Abstract not provided.
King, Donald B.; Fleming, Robert M.; Bielejec, Edward S.; McDonald, Joseph K.; Vizkelethy, Gyorgy V.
Abstract not provided.
King, Donald B.; Fleming, Robert M.; Bielejec, Edward S.; McDonald, Joseph K.; Vizkelethy, Gyorgy V.
Abstract not provided.
Bielejec, Edward S.; King, Donald B.; Patrizi, G.A.; Serkland, Darwin K.; Fleming, Robert M.; Vizkelethy, Gyorgy V.
Abstract not provided.
Bielejec, Edward S.; King, Donald B.; Doyle, Barney L.; Serkland, Darwin K.; Fleming, Robert M.; Pacheco, Jose L.; Hughart, David R.; Marinella, Matthew J.; Carroll, Malcolm
Abstract not provided.
Bielejec, Edward S.; Doyle, Barney L.; Patrizi, G.A.; King, Donald B.
Abstract not provided.
Fleming, Robert M.; Bielejec, Edward S.; King, Donald B.; McDonald, Joseph K.
Abstract not provided.
Bielejec, Edward S.; Fleming, Robert M.; King, Donald B.; Wampler, William R.
Abstract not provided.
Bielejec, Edward S.; King, Donald B.; Kolb, Norman K.; Patrizi, G.A.; Fleming, Robert M.
Abstract not provided.
McDonald, Joseph K.; Sheridan, Timothy J.; King, Donald B.; Hembree, Charles E.
Abstract not provided.
Bielejec, Edward S.; Fleming, Robert M.; King, Donald B.
Abstract not provided.
Physica B: Condensed Matter
Myers, S.M.; Wampler, W.R.; Cooper, P.J.; King, Donald B.
This work explores the feasibility of mechanistically modeling the transient behavior of defects and carriers in bipolar Si devices exposed to pulses of MeV neutrons. Our approach entails a detailed, finite-element treatment of the diffusion, field-drift, and reactions of well-established primal defects and reacted states, taking into account the localization of displacement damage within secondary cascades. The modeling captures a variety of the properties of pulse-neutron-irradiated transistors observed from electrical measurements and deep-level transient spectroscopy, using parameter values consistent with independently available information. © 2007 Elsevier B.V. All rights reserved.
IEEE Transactions on Nuclear Science
Bielejec, E.; Vizkelethy, G.; Fleming, Robert M.; King, Donald B.
We present a series of metrics for comparison between displacement damage due to heavy ion and neutron irradiation in silicon bipolar junction transistors. We have compared ion and fast neutron irradiations to determine an ion-to-neutron damage equivalence. We find that a combination of metrics (damage factor, Deep Level Transient Spectroscopy (DLTS) and Annealing Factor) are needed to ensure a comprehensive understanding of the physics involved in the ion-to-neutron conversion. The linearity of the damage factor (primarily probing the base-emitter junction) is not enough to ensure a valid comparison; rather, we must also use additional techniques (DLTS and capacitance measurements) to ensure that collector compensation is not occurring. As a result, care must be taken in choosing the irradiation beam for ion exposures. The displacement damage should peak in the sensitive region of the device to both ensure maximum gain degradation and to minimize collector compensation. © 2007 IEEE.
Bielejec, Edward S.; Fleming, Robert M.; King, Donald B.; Doyle, Barney L.
Abstract not provided.
Vehar, David W.; Cooper, Philip J.; King, Donald B.
Abstract not provided.
Griffin, Patrick J.; Ramirez, Daniel M.; King, Donald B.; Ginn, William G.; Harper-Slaboszewicz, V.H.; Luker, Spencer M.; McDonald, Joseph K.
Abstract not provided.
Bielejec, Edward S.; Fleming, Robert M.; King, Donald B.
Abstract not provided.
Bielejec, Edward S.; Fleming, Robert M.; King, Donald B.; Griffin, Patrick J.; Doyle, Barney L.
Abstract not provided.
King, Donald B.
Abstract not provided.
IEEE Transactions on Nuclear Science
Bielejec, E.; Vizkelethy, G.; Kolb, N.R.; King, Donald B.; Doyle, Barney L.
Results of displacement damage correlation between neutrons, light ions and heavy ions in bipolar junction transistors are presented. Inverse gain degradation as the function of fluence was measured. The inverse gain degradation due to heavy ion irradiation followed the Messenger-Spratt equation, while some deviation was found for light ions. © 2006 IEEE.
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