The oxidation mechanisms of exfoliated Gallium Selenide (GaSe) are strongly influenced by humidity. We have observed that the presence of water molecules leads to formation of Ga2O3, SeO2, and Se via sequence of intermediate reactions which include generation of aqueous solution of selenic acid. Raman spectra of GaSe flakes undergoing oxidation in a humidity-controlled environment reveal formation of selenic acid-related species causing Raman scattering signal in the regions around 830 cm-1 and around 1230 cm-1. This observation sheds light on the path of chemical reactions, going via an intermediate stage of formation of gallium hydroxide and selenium oxide-water complexes with further decompositions of these compounds to Ga2O3, SeO2, and amorphous selenium.
Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.
Thermophotovoltaics (TPV) is the process by which photons radiated from a thermal emitter are converted into electrical power via a photovoltaic cell. Selective thermal emitters that can survive at temperatures at or above ∼1000°C have the potential to greatly improve the efficiency of TPV energy conversion by restricting the emission of photons with energies below the photovoltaic (PV) cell bandgap energy. In this work, we demonstrated TPV energy conversion using a high-temperature selective emitter, dielectric filter, and 0.6 eV In0.68 Ga0.32 As photovoltaic cell. We fabricated a passivated platinum and alumina frequency-selective surface by conventional stepper lithography. To our knowledge, this is the first demonstration of TPV energy conversion using a metamaterial emitter. The emitter was heated to >1000°C, and converted electrical power was measured. After accounting for geometry, we demonstrated a thermal-to-electrical power conversion efficiency of 24.1 0.9% at 1055°C. We separately modeled our system consisting of a selective emitter, dielectric filter, and PV cell and found agreement with our measured efficiency and power to within 1%. Our results indicate that high-efficiency TPV generators are possible and are candidates for remote power generation, combined heat and power, and heat-scavenging applications.
We investigate plasmonic structures in nitride-based materials for far-infrared (IR) applications. The two dimensional electron gas (2DEG) in the GaN/AlGaN material system, much like metal- dielectric structures, is a patternable plasmonic medium. However, it also permits for direct tunability via an applied voltage. While there have been proof-of-principle demonstrations of plasma excitations in nitride 2DEGs, exploration of the potential of this material system has thus far been limited. We recently demonstrated coherent phenomena such as the formation of plasmonic crystals, strong coupling of tunable crystal defects to a plasmonic crystal, and electromagnetically induced transparency in GaAs/AlGaAs 2DEGs at sub-THz frequencies. In this project, we explore whether these effects can be realized in nitride 2DEG materials above 1 THz and at temperatures exceeding 77 K.