Publications

Smith, Patrick A.; Briner, Clifton F.; Plichta, Todd P.; Shagam, Richard N.; Mar, Alan M.; Cich, Michael C.; Baca, A.G.; Martin, Dennis C.; Martin, Dennis C.

Abstract not provided.

Smith, Patrick A.; Briner, Clifton F.; Plichta, Todd P.; Shagam, Richard N.; Mar, Alan M.; Cich, Michael C.; Baca, A.G.; Martin, Dennis C.

Abstract not provided.

Baca, A.G.; Klem, John F.; Ashby, Carol I.; Martin, Dennis C.

A high voltage GaAs HBT with an open-base collector breakdown voltage of 106 V and an open-emitter breakdown voltage of 134 V has been demonstrated. A high quality 9.0 {micro}m thick collector doped to 2.0{times}10{sup 15} cm{sup {minus}3} grown by MBE on a doped GaAs substrate is the key to achieving this breakdown. These results were achieved for HBTs with 4{times}40 {micro}m{sup 2} emitters. DC current gain of 38 at 6,000 A/cm{sup 2} was measured.