Publications

Journal of Micromechanics and Microengineering

Hunter, L.L.; Skala, Dawn M.; Levey, B.S.

During x-ray exposure in the LIGA process, the polymethylmethacrylate (PMMA) photoresist undergoes chain scission, which reduces the molecular weight of the exposed materials. Under some exposure and development conditions, sidewall cracking is observed on the PMMA sidewall, creating surface texture that is undesirable. In this research, exposed and developed PMMA sidewalls were examined for evidence of crack formation using optical profilometry. PMMA thickness, exposure dose and delay time between the end of exposure and beginning of development were varied. Our analysis of samples, with three different radiation doses and four different delay times from the end of exposure to the beginning of development, indicate that the first occurrence of cracking and the extent of cracking are affected by both the dose and the development delay time. This work includes the examination of the depth of cracks into the PMMA, distance between cracks, the width of cracks and the relationship between crack occurrence and dose profile. An empirical predictive model to correlate the delay time to the observance of sidewall cracking based on the deposited dose is presented. This information has direct implication for predicting processing conditions and logistics for LIGA fabricated parts. © 2006 IOP Publishing Ltd.

Griffiths, Stewart K.; Lu, Wei-Yang L.; Hekmaty, Michelle A.; McLean, Dorrance E.; Yang, Chu-Yeu P.; Friedmann, Thomas A.; Losey, Matthew W.; Hachman, John T.; Skala, Dawn M.; Hunter, Lucas L.; Yang, Nancy Y.; Boehme, Dale R.; Korellis, John S.; Aigeldinger, Georg A.

Resist substrates used in the LIGA process must provide high initial bond strength between the substrate and resist, little degradation of the bond strength during x-ray exposure, acceptable undercut rates during development, and a surface enabling good electrodeposition of metals. Additionally, they should produce little fluorescence radiation and give small secondary doses in bright regions of the resist at the substrate interface. To develop a new substrate satisfying all these requirements, we have investigated secondary resist doses due to electrons and fluorescence, resist adhesion before exposure, loss of fine features during extended development, and the nucleation and adhesion of electrodeposits for various substrate materials. The result of these studies is a new anodized aluminum substrate and accompanying methods for resist bonding and electrodeposition. We demonstrate successful use of this substrate through all process steps and establish its capabilities via the fabrication of isolated resist features down to 6 {micro}m, feature aspect ratios up to 280 and electroformed nickel structures at heights of 190 to 1400 {micro}m. The minimum mask absorber thickness required for this new substrate ranges from 7 to 15 {micro}m depending on the resist thickness.