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Impacts of Substrate Thinning on FPGA Performance and Reliability [Slides]

Leonhardt, Darin L.; Cannon, Matthew J.; Dodds, Nathaniel A.; Fellows, Matthew W.; Grzybowski, Thomas A.; Haase, Gad S.; Lee, David S.; LeBoeuf, Thomas L.; rice, William r.

Substrate thinning is necessary in devices with flip-chip BGA packages to enable both radiation testing and component qualification and high-spatial resolution beam-based failure analysis methods. We investigated three factors affecting device performance: subsurface damage from the thinning process, reduced heat spreading in thin substrates, and changes in device switching speed. We conclude subsurface damage to crystalline Si caused by the thinning process is removable with sufficient SiO2 slurry polishing. Local temperature differences increase minimally in devices thinned to 3 μm. Compressive stress in the Si increases globally after device thinning and leads to slowing of ring oscillator frequency by about 0.5% compared to full-thickness devices. Future work will include extending the results to submicron Si thickness values, which also has important benefits for failure analysis, debug, and security assessments. We also plan to extend this type of work to other FPGAs and other devices like memory and processors.

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Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+TM RFSoC Field-Programmable Gate Array under Proton Irradiation

IEEE Radiation Effects Data Workshop

Davis, Philip D.; Lee, David S.; Learn, Mark W.; Thorpe, Douglas E.

This study examines the single-event upset and single-event latch-up susceptibility of the Xilinx 16nm FinFET Zynq UltraScale+ RFSoC FPGA in proton irradiation. Results for SEU in configuration memory, BlockRAM memory, and device SEL are given.

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Single-Event Characterization of 16 nm FinFET Xilinx UltraScale+ Devices with Heavy Ion and Neutron Irradiation

2018 IEEE Nuclear and Space Radiation Effects Conference, NSREC 2018

Lee, David S.; King, Michael P.; Evans, William L.; Cannon, Matthew; Perez-Celis, Andres; Anderson, Jordan; Wirthlin, Michael; Rice, William C.

This study examines the single-event response of Xilinx 16nm FinFET UltraScale+ FPGA and MPSoC device families. Heavy-ion single-event latch-up, single-event upsets in configuration SRAM, BlockRAM™ memories, and flip-flops, and neutron-induced single-event latch-up results are provided.

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Addressing Angular Single-Event Effects in the Estimation of On-Orbit Error Rates

IEEE Transactions on Nuclear Science

Lee, David S.; Swift, Gary M.; Wirthlin, Michael J.; Draper, Jeffrey

This study describes complications introduced by angular direct ionization events on space error rate predictions. In particular, prevalence of multiple-cell upsets and a breakdown in the application of effective linear energy transfer in modern-scale devices can skew error rates approximated from currently available estimation models. This paper highlights the importance of angular testing and proposes a methodology to extend existing error estimation tools to properly consider angular strikes in modern-scale devices. These techniques are illustrated with test data provided from a modern 28 nm SRAM-based device.

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Outstanding Conference Paper Award: 2015 IEEE Nuclear and Space Radiation Effects Conference

IEEE Transactions on Nuclear Science

Dodds, Nathaniel A.; Martinez, Marino M.; Dodd, Paul E.; Shaneyfelt, Marty R.; Sexton, Frederick W.; Black, Jeffrey B.; Lee, David S.; Swanson, Scot E.; Bhuva, B.L.; Warren, K.W.; Reed, R.A.; Trippe, J.M.; Sierawski, B.D.; Weller, R.A.; Mahatme, N.M.; Gaspard, N.G.; Assis, T.A.; Austin, R.A.; Weeden-Wright, S.L.; Massengill, L.M.; Swift, G.S.; Wirthlin, M.W.; Cannon, M.C.; Liu, R.L.; Chen, L.C.; Kelly, A.K.; Marshall, P.W.; Trinczek, M.C.; Blackmore, E.W.; Wen, S.-J.W.; Wong, R.W.; Narasimham, B.N.; Pellish, J.A.; Puchner, H.P.

This conference presents the recipients of the Outstanding Conference Paper Award from the 2015 IEEE Nuclear and Space Radiation Effects Conference.

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The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

IEEE Transactions on Nuclear Science

Dodds, N.A.; Martinez, Marino M.; Dodd, Paul E.; Shaneyfelt, Marty R.; Sexton, Frederick W.; Black, J.D.; Lee, David S.; Swanson, Scot E.; Bhuva, B.L.; Warren, K.M.; Reed, R.A.; Trippe, J.; Sierawski, B.D.; Weller, R.A.; Mahatme, N.; Gaspard, N.J.; Assis, T.; Austin, R.; Weeden-Wright, S.L.; Massengill, L.W.; Swift, G.; Wirthlin, M.; Cannon, M.; Liu, R.; Chen, L.; Kelly, A.T.; Marshall, P.W.; Trinczek, M.; Blackmore, E.W.; Wen, S.J.; Wong, R.; Narasimham, B.; Pellish, J.A.; Puchner, H.

Low-and high-energy proton experimental data and error rate predictions are presented for many bulk Si and SOI circuits from the 20-90 nm technology nodes to quantify how much low-energy protons (LEPs) can contribute to the total on-orbit single-event upset (SEU) rate. Every effort was made to predict LEP error rates that are conservatively high; even secondary protons generated in the spacecraft shielding have been included in the analysis. Across all the environments and circuits investigated, and when operating within 10% of the nominal operating voltage, LEPs were found to increase the total SEU rate to up to 4.3 times as high as it would have been in the absence of LEPs. Therefore, the best approach to account for LEP effects may be to calculate the total error rate from high-energy protons and heavy ions, and then multiply it by a safety margin of 5. If that error rate can be tolerated then our findings suggest that it is justified to waive LEP tests in certain situations. Trends were observed in the LEP angular responses of the circuits tested. Grazing angles were the worst case for the SOI circuits, whereas the worst-case angle was at or near normal incidence for the bulk circuits.

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Single-event characterization of the 20 nm Xilinx Kintex UltraScale field-programmable gate array under heavy ion irradiation

IEEE Radiation Effects Data Workshop

Lee, David S.; Allen, Gregory R.; Swift, Gary; Cannon, Matthew; Wirthlin, Michael; George, Jeffrey S.; Koga, Rokutaro; Huey, Kangsen

This study examines the single-event response of the Xilinx 20 nm Kintex UltraScale Field-Programmable Gate Array irradiated with heavy ions. Results for single-event latch-up and single-event upset on configuration SRAM cells and Block RAM memories are provided.

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The contribution of low-energy protons to the total on-orbit SEU rate

IEEE Transactions on Nuclear Science

Dodds, Nathaniel A.; Martinez, Marino M.; Dodd, Paul E.; Shaneyfelt, Marty R.; Sexton, Frederick W.; Black, Jeffrey B.; Lee, David S.; Swanson, Scot E.; Bhuva, B.L.; Warren, K.W.; Reed, R.A.; Trippe, J.M.; Sierawski, B.D.; Weller, R.A.; Mahatme, N.M.; Gaspard, N.G.; Assis, T.A.; Austin, R.A.; Massengill, L.M.; Swift, G.S.; Wirthlin, M.W.; Cannon, M.C.; Liu, R.L.; Chen, L.C.; Kelly, A.K.; Marshall, P.W.; Trinczek, M.C.; Blackmore, E.W.; Wen, S.-J.W.; Wong, R.W.; Narasimham, B.N.; Pellish, J.A.; Puchner, H.P.

Low- and high-energy proton experimental data and error rate predictions are presented for many bulk Si and SOI circuits from the 20-90 nm technology nodes to quantify how much low-energy protons (LEPs) can contribute to the total on-orbit single-event upset (SEU) rate. Every effort was made to predict LEP error rates that are conservatively high; even secondary protons generated in the spacecraft shielding have been included in the analysis. Across all the environments and circuits investigated, and when operating within 10% of the nominal operating voltage, LEPs were found to increase the total SEU rate to up to 4.3 times as high as it would have been in the absence of LEPs. Therefore, the best approach to account for LEP effects may be to calculate the total error rate from high-energy protons and heavy ions, and then multiply it by a safety margin of 5. If that error rate can be tolerated then our findings suggest that it is justified to waive LEP tests in certain situations. Trends were observed in the LEP angular responses of the circuits tested. As a result, grazing angles were the worst case for the SOI circuits, whereas the worst-case angle was at or near normal incidence for the bulk circuits.

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The contribution of low-energy protons to the total on-orbit SEU rate

Dodds, Nathaniel A.; Martinez, Marino M.; Dodd, Paul E.; Shaneyfelt, Marty R.; Sexton, Frederick W.; Black, Jeffrey B.; Lee, David S.; Swanson, Scot E.; Bhuva, B.L.; Warren, K.W.; Reed, R.A.; Trippe, J.M.; Sierawski, B.D.; Weller, R.A.; Mahatme, N.M.; Gaspard, N.G.; Assis, T.A.; Austin, R.A.; Massengill, L.M.; Swift, G.S.; Wirthlin, M.W.; Cannon, M.C.; Liu, R.L.; Chen, L.C.; Kelly, A.K.; Marshall, P.W.; Trinczek, M.C.; Blackmore, E.W.; Wen, S.-J.W.; Wong, R.W.; Narasimham, B.N.; Pellish, J.A.; Puchner, H.P.

Abstract not provided.

Single-event characterization of the 28 nm Xilinx Kintex-7 field-programmable gate array under heavy ion irradiation

IEEE Radiation Effects Data Workshop

Lee, David S.; Wirthlin, Michael; Swift, Gary; Le, Anthony C.

This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM™ memory are provided. This study also describes an unconventional single event latch-up signature observed during testing.

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Application specific compression : final report

Melgaard, David K.; Lewis, Phillip J.; Lee, David S.; Carlson, Jeffrey J.; Byrne, Raymond H.; Harrison, Carol D.

With the continuing development of more capable data gathering sensors, comes an increased demand on the bandwidth for transmitting larger quantities of data. To help counteract that trend, a study was undertaken to determine appropriate lossy data compression strategies for minimizing their impact on target detection and characterization. The survey of current compression techniques led us to the conclusion that wavelet compression was well suited for this purpose. Wavelet analysis essentially applies a low-pass and high-pass filter to the data, converting the data into the related coefficients that maintain spatial information as well as frequency information. Wavelet compression is achieved by zeroing the coefficients that pertain to the noise in the signal, i.e. the high frequency, low amplitude portion. This approach is well suited for our goal because it reduces the noise in the signal with only minimal impact on the larger, lower frequency target signatures. The resulting coefficients can then be encoded using lossless techniques with higher compression levels because of the lower entropy and significant number of zeros. No significant signal degradation or difficulties in target characterization or detection were observed or measured when wavelet compression was applied to simulated and real data, even when over 80% of the coefficients were zeroed. While the exact level of compression will be data set dependent, for the data sets we studied, compression factors over 10 were found to be satisfactory where conventional lossless techniques achieved levels of less than 3.

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Hardware demonstration of high-speed networks for satellite applications

Lee, David S.; Donaldson, Jonathon W.

This report documents the implementation results of a hardware demonstration utilizing the Serial RapidIO{trademark} and SpaceWire protocols that was funded by Sandia National Laboratories (SNL's) Laboratory Directed Research and Development (LDRD) office. This demonstration was one of the activities in the Modeling and Design of High-Speed Networks for Satellite Applications LDRD. This effort has demonstrated the transport of application layer packets across both RapidIO and SpaceWire networks to a common downlink destination using small topologies comprised of commercial-off-the-shelf and custom devices. The RapidFET and NEX-SRIO debug and verification tools were instrumental in the successful implementation of the RapidIO hardware demonstration. The SpaceWire hardware demonstration successfully demonstrated the transfer and routing of application data packets between multiple nodes and also was able reprogram remote nodes using configuration bitfiles transmitted over the network, a key feature proposed in node-based architectures (NBAs). Although a much larger network (at least 18 to 27 nodes) would be required to fully verify the design for use in a real-world application, this demonstration has shown that both RapidIO and SpaceWire are capable of routing application packets across a network to a common downlink node, illustrating their potential use in real-world NBAs.

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A survey of routing techniques in store-and-forward and wormhole interconnects

Lee, David S.

This paper presents an overview of algorithms for directing messages through networks of varying topology. These are commonly referred to as routing algorithms in the literature that is presented. In addition to providing background on networking terminology and router basics, the paper explains the issues of deadlock and livelock as they apply to routing. After this, there is a discussion of routing algorithms for both store-and-forward and wormhole-switched networks. The paper covers both algorithms that do and do not adapt to conditions in the network. Techniques targeting structured as well as irregular topologies are discussed. Following this, strategies for routing in the presence of faulty nodes and links in the network are described.

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Network topology analysis

Lee, David S.; Kalb, Jeffrey L.

Emerging high-bandwidth, low-latency network technology has made network-based architectures both feasible and potentially desirable for use in satellite payload architectures. The selection of network topology is a critical component when developing these multi-node or multi-point architectures. This study examines network topologies and their effect on overall network performance. Numerous topologies were reviewed against a number of performance, reliability, and cost metrics. This document identifies a handful of good network topologies for satellite applications and the metrics used to justify them as such. Since often multiple topologies will meet the requirements of the satellite payload architecture under development, the choice of network topology is not easy, and in the end the choice of topology is influenced by both the design characteristics and requirements of the overall system and the experience of the developer.

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47 Results
47 Results