We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing window over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. Modeling results for laser annealing in Si are also presented.
Low signal-to-noise data processing algorithms for improved detection, tracking, discrimination and situational threat assessment are a key research challenge. As sensor technologies progress, the number of pixels will increase signi cantly. This will result in increased resolution, which could improve object discrimination, but unfortunately, will also result in a significant increase in the number of potential targets to track. Many tracking techniques, like multi-hypothesis trackers, suffer from a combinatorial explosion as the number of potential targets increase. As the resolution increases, the phenomenology applied towards detection algorithms also changes. For low resolution sensors, "blob" tracking is the norm. For higher resolution data, additional information may be employed in the detection and classfication steps. The most challenging scenarios are those where the targets cannot be fully resolved, yet must be tracked and distinguished for neighboring closely spaced objects. Tracking vehicles in an urban environment is an example of such a challenging scenario. This report evaluates several potential tracking algorithms for large-scale tracking in an urban environment.
The reflection of an optical wave from metal, arising from strong interactions between the optical electric field and the free carriers of the metal, is accompanied by a phase reversal of the reflected electric field. A far less common route to achieving high reflectivity exploits strong interactions between the material and the optical magnetic field to produce a “magnetic mirror” that does not reverse the phase of the reflected electric field. At optical frequencies, the magnetic properties required for strong interaction can be achieved only by using artificially tailored materials. Here, we experimentally demonstrate, for the first time to the best of our knowledge, the magnetic mirror behavior of a low-loss all-dielectric metasurface at infrared optical frequencies through direct measurements of the phase and amplitude of the reflected optical wave. The enhanced absorption and emission of transverse-electric dipoles placed close to magnetic mirrors can lead to exciting new advances in sensors, photodetectors, and light sources.
Semiconductor saturable absorbers (SESAs) introduce loss into a solid-state laser cavity until the cavity field bleaches the absorber producing a high-energy pulse. Multiple quantum wells (MQWs) of AlGaInAs grown lattice-matched to InP have characteristics that make them attractive for SESAs. The band gap can be tuned around the target wavelength, 1064 nm, and the large conduction band offset relative to the AlInAs barrier material helps reduces the saturation fluence, and transparent substrate reduces nonsaturable losses. We have characterized the lifetime of the bleaching process, the modulation depth, the nonsaturable losses, and the saturation fluence associated with SESAs. We compare different growth conditions and structure designs. These parameters give insight into the quality of the epitaxy and effect structure design has on SESA performance in a laser cavity. AlGaInAs MQWs were grown by MOVPE using a Veeco D125 machine using methyl-substituted metal-organics and hydride sources at a growth temperature of 660 C at a pressure of 60 Torr. A single period of the basic SESA design consists of approximately 130 to 140 nm of AlInAs barrier followed by two AlGaInAs quantum wells separated by 10 nm AlInAs. This design places the QWs near the nodes of the 1064-nm laser cavity standing wave. Structures consisting of 10-, 20-, and 30-periods were grown and evaluated. The SESAs were measured at 1064 nm using an optical pump-probe technique. The absorbance bleaching lifetime varies from 160 to 300 nsec. The nonsaturable loss was as much as 50% for structures grown on n-type, sulfur-doped InP substrates, but was reduced to 16% when compensated, Fe-doped InP substrates were used. The modulation depth of the SESAs increased linearly from 9% to 30% with the number of periods. We are currently investigating how detuning the QW transition energy impacts the bleaching characteristics. We will discuss how each of these parameters impacts the laser performance.