We report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO2 MOSFETs using two powerful analytical techniques: electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). We find the dominant EDMR-sensitive traps generated throughout the majority of the TDDB process to be silicon dangling bonds at the (100) Si/SiO2 interface ( { boldsymbol {P}}-{ boldsymbol {b} boldsymbol {0}} and { boldsymbol {P}}-{ boldsymbol {b} boldsymbol {1}} centers) for both the spin-dependent recombination (SDR) and trap-assisted tunneling (SDTAT) processes. We find this generation to be linked to both changes in the calculated interface state densities as well as changes in the NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation of traps known as boldsymbol {E}' centers in EDMR measurements at lower experimental temperatures via SDR measurements at the interface. Our work strongly suggests the involvement of a rate-limiting step in the tunneling process between the silicon dangling bonds generated at the interface and the ones generated throughout the oxide.
Electrically detected magnetic resonance and near-zero-field magnetoresistance measurements were used to study atomic-scale traps generated during high-field gate stressing in Si/SiO2 MOSFETs. The defects observed are almost certainly important to time-dependent dielectric breakdown. The measurements were made with spin-dependent recombination current involving defects at and near the Si/SiO2 boundary. The interface traps observed are Pb0 and Pb1 centers, which are silicon dangling bond defects. The ratio of Pb0/Pb1 is dependent on the gate stressing polarity. Electrically detected magnetic resonance measurements also reveal generation of E′ oxide defects near the Si/SiO2 interface. Near-zero-field magnetoresistance measurements made throughout stressing reveal that the local hyperfine environment of the interface traps changes with stressing time; these changes are almost certainly due to the redistribution of hydrogen near the interface.
We investigate the initial stages of time-dependent dielectric breakdown (TDDB) in high-field stressed Si/SiO2 MOSFETs via electrically detected magnetic resonance (EDMR). As anticipated, we find that the defects dominating the initial stages of TDDB include silicon dangling bonds at the (100) Si/SiO2 interface (Pb0 and Pb1 centers). We find that the densities of these defects increase with stress time. With similar stressing and optimized measurement temperature, we do observe EDMR of generated oxide defects known as E′ centers. The results indicate that the initial stages of TDDB in the Si/SiO2 system involves a rate limiting step of tunneling between a silicon dangling bond and an oxide defect. Additionally, we have made near-zero field magnetoresistance spectroscopy measurements, which show clear differences with stressing time; these differences are almost certainly due to a redistribution of hydrogen atoms in the oxide.