Publications

The ion photon emission microscope (IPEM) is a technique developed at Sandia National Laboratories (SNL) to study radiation effects in integrated circuits with high energy, heavy ions, such as those produced by the 88" cyclotron at Lawrence Berkeley National Laboratory (LBNL). In this method, an ion-luminescent film is used to produce photons from the point of ion impact. The photons emitted due to an ion impact are imaged on a position-sensitive detector to determine the location of a single event effect (SEE). Due to stringent resolution, intensity, wavelength, decay time, and radiation tolerance demands, an engineered material with very specific properties is required to act as the luminescent film. The requirements for this material are extensive. It must produce a high enough induced luminescent intensity so at least one photon is detected per ion hit. The emission wavelength must match the sensitivity of the detector used, and the luminescent decay time must be short enough to limit accidental coincidences. In addition, the material must be easy to handle and its luminescent properties must be tolerant to radiation damage. Materials studied for this application include plastic scintillators, GaN and GaN/InGaN quantum well structures, and lanthanide-activated ceramic phosphors. Results from characterization studies on these materials will be presented; including photoluminescence, cathodoluminescence, ion beam induced luminescence, luminescent decay times, and radiation damage. Results indicate that the ceramic phosphors are currently proving to be the ideal material for IPEM investigations.

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The development of a new radiation effects microscopy (REM) technique is crucial as emerging semiconductor technologies demonstrate smaller feature sizes and thicker back end of line (BEOL) layers. To penetrate these materials and still deposit sufficient energy into the device to induce single event effects, high energy heavy ions are required. Ion photon emission microscopy (IPEM) is a technique that utilizes coincident photons, which are emitted from the location of each ion impact to map out regions of radiation sensitivity in integrated circuits and devices, circumventing the obstacle of focusing high-energy heavy ions. Several versions of the IPEM have been developed and implemented at Sandia National Laboratories (SNL). One such instrument has been utilized on the microbeam line of the 6 MV tandem accelerator at SNL. Another IPEM was designed for ex-vacu use at the 88 cyclotron at Lawrence Berkeley National Laboratory (LBNL). Extensive engineering is involved in the development of these IPEM systems, including resolving issues with electronics, event timing, optics, phosphor selection, and mechanics. The various versions of the IPEM and the obstacles, as well as benefits associated with each will be presented. In addition, the current stage of IPEM development as a user instrument will be discussed in the context of recent results.

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The ion photon emission microscope (IPEM), a new radiation effects microscope for the imaging of single event effects from penetrating radiation, is being developed at Sandia National Laboratories and implemented on the 88' cyclotron at Lawrence Berkeley National Laboratories. The microscope is designed to permit the direct correlation between the locations of high-energy heavy-ion strikes and single event effects in microelectronic devices. The development of this microscope has required the production of a robust optical system that is compatible with the ion beam lines, design and assembly of a fast single photon sensitive measurement system to provide the necessary coincidence, and the development and testing of many scintillating films. A wide range of scintillating material for application to the ion photon emission microscope has been tested with few meeting the stringent radiation hardness, intensity, and photon lifetime requirements. The initial results of these luminescence studies and the current operation of the ion photon emission microscope will be presented. Finally, the planned development for future microscopes and ion luminescence testing chambers will be discussed.