The goal of this project was to expand upon previously demonstrated single carbon nanotube devices by preparing a more practical, multi-single-walled carbon nanotube (SWNT) device. As a late-start, proof-of-concept project, the work focused on the fabrication and testing of chromophore-functionalized aligned SWNT field effect transistors (SWNT-FET). Such devices have not yet been demonstrated. The advantages of fabricating aligned SWNT devices include increased device cross-section to improve sensitivity to light, elimination of increased electrical resistance at nanotube junctions in random mat devices, and the ability to model device responses. The project did not achieve the goal of fabricating and testing chromophore-modified SWNT arrays, but a new SWNT growth capability was established that will benefit future projects. Although the ultimate goal of fabricating and testing chromophore-modified SWNT arrays was not achieved, the work did lead to a new carbon nanotube growth capability at Sandia/CA. The synthesis of dense arrays of horizontally aligned SWNTs is a developing area of research with significant potential for new discoveries. In particular, the ability to prepare arrays of carbon nanotubes of specific electronic types (metallic or semiconducting) could yield new classes of nanoscale devices.
The integration of block-copolymers (BCPs) and nanoimprint lithography (NIL) presents a novel and cost-effective approach to achieving nanoscale patterning capabilities. The authors demonstrate the fabrication of a surface-enhanced Raman scattering device using templates created by the BCP-NIL integrated method. The method utilizes a poly(styrene-block-methyl methacrylate) cylindrical-forming diblock-copolymer as a masking material to create a Si template, which is then used to perform a thermal imprint of a poly(methyl methacrylate) (PMMA) layer on a Si substrate. Au with a Cr adhesion layer was evaporated onto the patterned PMMA and the subsequent lift-off resulted in an array of nanodots. Raman spectra collected for samples of R6G on Si substrates with and without patterned nanodots showed enhancement of peak intensities due to the presence of the nanodot array. The demonstrated BCP-NIL fabrication method shows promise for cost-effective nanoscale fabrication of plasmonic and nanoelectronic devices.
Resist substrates used in the LIGA process must provide high initial bond strength between the substrate and resist, little degradation of the bond strength during x-ray exposure, acceptable undercut rates during development, and a surface enabling good electrodeposition of metals. Additionally, they should produce little fluorescence radiation and give small secondary doses in bright regions of the resist at the substrate interface. To develop a new substrate satisfying all these requirements, we have investigated secondary resist doses due to electrons and fluorescence, resist adhesion before exposure, loss of fine features during extended development, and the nucleation and adhesion of electrodeposits for various substrate materials. The result of these studies is a new anodized aluminum substrate and accompanying methods for resist bonding and electrodeposition. We demonstrate successful use of this substrate through all process steps and establish its capabilities via the fabrication of isolated resist features down to 6 {micro}m, feature aspect ratios up to 280 and electroformed nickel structures at heights of 190 to 1400 {micro}m. The minimum mask absorber thickness required for this new substrate ranges from 7 to 15 {micro}m depending on the resist thickness.