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Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

IEEE Transactions on Nuclear Science

King, M.P.; Wu, X.; Eller, M.; Samavedam, S.; Shaneyfelt, Marty R.; Silva, A.I.; Draper, Bruce L.; Rice, W.C.; Meisenheimer, Timothy L.; Felix, J.A.; Zhang, E.X.; Haeffner, T.D.; Ball, D.R.; Shetler, K.J.; Alles, M.L.; Kauppila, J.S.; Massengill, Lloyd W.

Total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibit a larger change in off-state leakage current. The "worst-case" bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.

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TYPE Journal Article YEAR 2017
ScopusOSTIDOI
Results 1–25 of 39
Results 1–25 of 39