Optics InfoBase Conference Papers
A tandem interferometer system measuring the absolute phase and amplitude of planar split-ring resonators fabricated on a BaF2 substrate with a designed resonance at 10.5 μm is presented. © 2010 Optical Society of America.
Proceedings of SPIE - The International Society for Optical Engineering
We demonstrate mid-infrared electroluminescence from intersublevel transitions in self-assembled InAs quantum dots coupled to surface plasmon modes on metal hole arrays. Subwavelength metal hole arrays with different periodicity are patterned into the top contact of the broadband (9 - 15 μm) quantum dot material and the measured electroluminescence is compared to devices without a metal hole array. The resulting normally directed emission is narrowed and a splitting in the spectral structure is observed. By applying a coupled quantum electrodynamic model and using reasonable values for quantum dot distributions and plasmon linewidths we are able to reproduce the experimentally measured spectral characteristics of device emission when using strong coupling parameters. © 2010 SPIE.
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We describe a time-domain spectroscopy system in the thermal infrared used for complete transmission and reflection characterization of metamaterials in amplitude and phase. The system uses a triple-output near-infrared ultrafast fiber laser, phase-locked difference frequency generation and phase-matched electro-optic sampling. We will present measurements of several metamaterials designs.
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Metal films perforated with subwavelength hole arrays have been show to demonstrate an effect known as Extraordinary Transmission (EOT). In EOT devices, optical transmission passbands arise that can have up to 90% transmission and a bandwidth that is only a few percent of the designed center wavelength. By placing a tunable dielectric in proximity to the EOT mesh, one can tune the center frequency of the passband. We have demonstrated over 1 micron of passive tuning in structures designed for an 11 micron center wavelength. If a suitable midwave (3-5 micron) tunable dielectric (perhaps BaTiO{sub 3}) were integrated with an EOT mesh designed for midwave operation, it is possible that a fast, voltage tunable, low temperature filter solution could be demonstrated with a several hundred nanometer passband. Such an element could, for example, replace certain components in a filter wheel solution.
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Ultrafast electronic switches fabricated from defective material have been used for several decades in order to produce picosecond electrical transients and TeraHertz radiation. Due to the ultrashort recombination time in the photoconductor materials used, these switches are inefficient and are ultimately limited by the amount of optical power that can be applied to the switch before self-destruction. The goal of this work is to create ultrafast (sub-picosecond response) photoconductive switches on GaAs that are enhanced through plasmonic coupling structures. Here, the plasmonic coupler primarily plays the role of being a radiation condenser which will cause carriers to be generated adjacent to metallic electrodes where they can more efficiently be collected.
The three-dimensional confinement inherent in InAs self-assembled quantum dots (SAQDs) yields vastly different optical properties compared to one-dimensionally confined quantum well systems. Intersubband transitions in quantum dots can emit light normal to the growth surface, whereas transitions in quantum wells emit only parallel to the surface. This is a key difference that can be exploited to create a variety of quantum dot devices that have no quantum well analog. Two significant problems limit the utilization of the beneficial features of SAQDs as mid-infrared emitters. One is the lack of understanding concerning how to electrically inject carriers into electronic states that allow optical transitions to occur efficiently. Engineering of an injector stage leading into the dot can provide current injection into an upper dot state; however, to increase the likelihood of an optical transition, the lower dot states must be emptied faster than upper states are occupied. The second issue is that SAQDs have significant inhomogeneous broadening due to the random size distribution. While this may not be a problem in the long term, this issue can be circumvented by using planar photonic crystal or plasmonic approaches to provide wavelength selectivity or other useful functionality.