Publications

Xiao, Xiaoyin; Leung, Benjamin L.; Lu, Ping L.; Fischer, Arthur J.; Coltrin, Michael E.; Wang, George T.; Koleske, Daniel K.; Tsao, Jeffrey Y.

Abstract not provided.

Leung, Benjamin L.; Tsai, Miao-Chan T.; Balakrishnan, Ganesh B.; Li, Changyi L.; Brueck, Steven R.; Figiel, J.J.; Lu, Ping L.; Wang, George T.

Abstract not provided.

Tsai, Miao-Chan T.; Leung, Benjamin L.; Balakrishnan, Ganesh B.; Wang, George T.

Abstract not provided.

Leung, Benjamin L.; Figiel, J.J.; Lu, Ping L.; Wang, George T.

Abstract not provided.

Tsai, Miao-Chan T.; Leung, Benjamin L.; Balakrishnan, Ganesh B.; Wang, George T.

Abstract not provided.

Wang, George T.; Leung, Benjamin L.

Abstract not provided.

Li, Changyi L.; Liu, Sheng L.; Wright, Jeremy B.; Hurtado, Antonio H.; Xu, Huiwen X.; Lu, Ping L.; Figiel, J.J.; Leung, Benjamin L.; Luk, Ting S.; Brener, Igal B.; Feezell, Daniel F.; Brueck, S.R.; Wang, George T.

Abstract not provided.

Wang, George T.; Wright, Jeremy B.; Liu, Sheng L.; Li, Qiming L.; Brener, Igal B.; Leung, Benjamin L.; Luk, Ting S.; Chow, Weng W.; Figiel, J.J.; Crawford, Mary H.; Li, Changyi L.; Xu, Huiwen X.; Hurtado, Antonio H.; Lester, Luke F.; Brueck, Steven R.

Abstract not provided.

Leung, Benjamin L.; Tsai, Miao-Chan T.; Li, Changyi L.; Liu, Sheng L.; Figiel, J.J.; Allerman, A.A.; Crawford, Mary H.; Balakrishnan, Ganesh B.; Brueck, Steven R.; Wang, George T.

Abstract not provided.

Leung, Benjamin L.; Tsai, Miao-Chan T.; Li, Changyi L.; Liu, Sheng L.; Figiel, J.J.; Allerman, A.A.; Crawford, Mary H.; Balakrishnan, Ganesh B.; Brueck, Steven R.; Wang, George T.

Abstract not provided.

Li, Changyi L.; Wright, Jeremy B.; Liu, Sheng L.; Lu, Ping L.; Figiel, J.J.; Leung, Benjamin L.; Luk, Ting S.; Brener, Igal B.; Feezell, Daniel F.; Brueck, Steven R.; Wang, George T.

Abstract not provided.

Tsai, Miao-Chan T.; Leung, Benjamin L.; Li, Changyi L.; Liu, Sheng L.; Figiel, J.J.; Balakrishnan, Ganesh B.; Brueck, Steven R.; Wang, George T.

Abstract not provided.

Fischer, Arthur J.; Leung, Benjamin L.; Wang, George T.

Abstract not provided.

Wang, George T.; Li, Changyi L.; Li, Qiming L.; Liu, Sheng L.; Wright, Jeremy B.; Brener, Igal B.; Luk, Ting S.; Chow, Weng W.; Leung, Benjamin L.; Figiel, J.J.; Koleske, Daniel K.; Lu, Tzu-Ming L.

There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

Journal of Crystal Growth

Lin, Yong; Leung, Benjamin L.; Li, Qiming; Figiel, J.J.; Wang, George T.

Ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal-organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

CLEO: Science and Innovations, CLEO-SI 2015

Li, Changyi; Wright, Jeremy B.; Liu, Sheng L.; Lu, Ping L.; Figiel, J.J.; Leung, Benjamin L.; Luk, Ting S.; Brener, Igal B.; Feezell, Daniel; Brueck, S.R.J.; Wang, George T.

Lasing is demonstrated from nonpolar III-nitride core-shell multi-quantum-well nanowires. The nanowire lasers were fabricated by coupling a top-down and bottom-up methodology and achieved lasing at wavelengths below the GaN bandedge. © OSA 2015.