The growing demand for bandwidth makes photonic systems a leading candidate for future telecommunication and radar technologies. Integrated photonic systems offer ultra-wideband performance within a small footprint, which can naturally interface with fiber-optic networks for signal transmission. However, it remains challenging to realize narrowband (∼MHz) filters needed for high-performance communications systems using integrated photonics. In this paper, we demonstrate all-silicon microwave-photonic notch filters with 50× higher spectral resolution than previously realized in silicon photonics. This enhanced performance is achieved by utilizing optomechanical interactions to access long-lived phonons, greatly extending available coherence times in silicon. We use a multi-port Brillouin-based optomechanical system to demonstrate ultra-narrowband (2.7 MHz) notch filters with high rejection (57 dB) and frequency tunability over a wide spectral band (6 GHz) within a microwave-photonic link. We accomplish this with an all-silicon waveguide system, using CMOS-compatible fabrication techniques.
The canonical beam splitter - a fundamental building block of quantum optical systems - is a reciprocal element. It operates on forward- and backward-propagating modes in the same way, regardless of direction. The concept of nonreciprocal quantum photonic operations, by contrast, could be used to transform quantum states in a momentum- and direction-selective fashion. Here we demonstrate the basis for such a nonreciprocal transformation in the frequency domain through intermodal Bragg scattering four-wave mixing (BSFWM). Since the total number of idler and signal photons is conserved, the process can preserve coherence of quantum optical states, functioning as a nonreciprocal frequency beam splitter. We explore the origin of this nonreciprocity and find that the phase-matching requirements of intermodal BSFWM produce an enormous asymmetry (76×) in the conversion bandwidths for forward and backward configurations, yielding ∼25 dB of nonreciprocal contrast over several hundred GHz. We also outline how the demonstrated efficiencies (∼10-4) may be scaled to near-unity values with readily accessible powers and pumping configurations for applications in integrated quantum photonics.
We present narrowband RF-photonic filters in an integrated silicon platform. Using Brillouin interactions, the filters yield narrowband (∼MHZ) filter bandwidths with high signal rejection, and demonstrate tunability over a wide (∼GHz) frequency range.
Cryogenic environments make superconducting computing possible by reducing thermal noise, electrical resistance and heat dissipation. Heat generated by the electronics and thermal conductivity of electrical transmission lines to the outside world constitute two main sources of thermal load in such systems. As a result, higher data rates require additional transmission lines which come at an increasingly higher cooling power cost. Hybrid or monolithic integration of silicon photonics with the electronics can be the key to higher data rates and lower power costs in these systems. We present a 4-channel wavelength division multiplexing photonic integrated circuit (PIC) built from modulators in the AIM Photonics process development kit (PDK) that operate at 25 Gbps at room temperature and 10 Gbps at 40 K. We further demonstrate 2-channel operation for 20 Gbps aggregate data rate at 40 K using two different modulators/wavelengths, with the potential for higher aggregate bit rates by utilizing additional channels.
Passive silicon photonic waveguides are exposed to gamma radiation to understand how the performance of silicon photonic integrated circuits is affected in harsh environments such as space or high energy physics experiments. The propagation loss and group index of the mode guided by these waveguides is characterized by implementing a phase sensitive swept-wavelength interferometric method. We find that the propagation loss associated with each waveguide geometry explored in this study slightly increases at absorbed doses of up to 100 krad (Si). The measured change in group index associated with the same waveguide geometries is negligibly changed after exposure. Additionally, we show that the post-exposure degradation of these waveguides can be improved through heat treatment.
As self-sustained oscillators, lasers possess the unusual ability to spontaneously synchronize. These nonlinear dynamics are the basis for a simple yet powerful stabilization technique known as injection locking, in which a laser's frequency and phase can be controlled by an injected signal. Because of its inherent simplicity and favorable noise characteristics, injection locking has become a workhorse for coherent amplification and high-fidelity signal synthesis in applications ranging from precision atomic spectroscopy to distributed sensing. Within integrated photonics, however, these injection-locking dynamics remain relatively untapped - despite significant potential for technological and scientific impact. Here, we demonstrate injection locking in a silicon photonic Brillouin laser. Injection locking of this monolithic device is remarkably robust, allowing us to tune the laser emission by a significant fraction of the Brillouin gain bandwidth. Harnessing these dynamics, we demonstrate amplification of small signals by more than 23 dB. Moreover, we demonstrate that the injection-locking dynamics of this system are inherently nonreciprocal, yielding unidirectional control and backscatter immunity in an all-silicon system. This device physics opens the door to strategies for phase-noise reduction, low-noise amplification, and backscatter immunity in silicon photonics.
Silicon photonics is a platform that enables densely integrated photonic components and systems and integration with electronic circuits. Depletion mode modulators designed on this platform suffer from a fundamental frequency response limit due to the mobility of carriers in silicon. Lithium niobate-based modulators have demonstrated high performance, but the material is difficult to process and cannot be easily integrated with other photonic components and electronics. In this manuscript, we simultaneously take advantage of the benefits of silicon photonics and the Pockels effect in lithium niobate by heterogeneously integrating silicon photonic-integrated circuits with thin-film lithium niobate samples. We demonstrate the most CMOS-compatible thin-film lithium niobate modulator to date, which has electro-optic 3 dB bandwidths of 30.6 GHz and half-wave voltages of 6.7 V×cm. These modulators are fabricated entirely in CMOS facilities, with the exception of the bonding of a thin-film lithium niobate sample post fabrication, and require no etching of lithium niobate.
We present a 30 GHz heterogeneously integrated silicon photonic/lithium niobate Mach-Zehnder modulator simultaneously utilizing the strong Pockels effect in LiNbO3 while also taking advantage of the ability for photonic/electronic integration and mass production associated with silicon photonics. Aside from the final step of bonding the LiNbO3, this modulator can be entirely fabricated using CMOS facilities.
AVFOP 2019 - Avionics and Vehicle Fiber-Optics and Photonics Conference
Yang, Benjamin B.; Lovelace, Brandon; Wier, Brian R.; Campbell, Jacob; Bolding, Mark; Chan, Cheong W.; Vinson, J.G.; Muthuchamy, Tarun; Bhattacharjea, Rajib; Harris, T.R.; Davis, Kyle; Stark, Andrew; Ward, Christopher; Bottenfield, Christian; Ralph, Stephen E.; Gehl, M.; Kodigala, Ashok; Starbuck, Andrew; Dallo, Christina; Pomerene, Andrew; Trotter, Doug; Lentine, Anthony L.
A compact radio frequency (RF) photonic receiver consisting of several photonic integrated circuits (PIC) that performs channelization and simultaneously downconverts the signal is described. A technique is also presented to adjust the phase shifters of the arrayed waveguide grating channelizer without direct phase measurements.
We demonstrate the ultrahigh extinction operation of a silicon photonic (SiP) amplitude modulator (AM) employing a cascaded Mach-Zehnder interferometer. By carrying out optimization sweeps without significantly degrading the extinction, the SiP AM is robust to environment changes and maintained >52 dB extinction for >6 hrs.
Measurement uncertainties in the techniques used to characterize loss in photonic waveguides becomes a significant issue as waveguide loss is reduced through improved fabrication technology. Typical loss measurement techniques involve environmentally unknown parameters such as facet reflectivity or varying coupling efficiencies, which directly contribute to the uncertainty of the measurement. We present a loss measurement technique, which takes advantage of the differential loss between multiple paths in an arrayed waveguide structure, in which we are able to gather statistics on propagation loss from several waveguides in a single measurement. This arrayed waveguide structure is characterized using a swept-wavelength interferometer, enabling the analysis of the arrayed waveguide transmission as a function of group delay between waveguides. Loss extraction is only dependent on the differential path length between arrayed waveguides and is therefore extracted independently from on and off-chip coupling efficiencies, which proves to be an accurate and reliable method of loss characterization. This method is applied to characterize the loss of the silicon photonic platform at Sandia Labs with an uncertainty of less than 0.06 dB/cm.
This report captures the initial conclusions of the DOE seven National Lab team collaborating on the “Solving the Information Technology Energy Challenge Beyond Moore’s Law” initiative from the DOE Big Idea Summit III held in April of 2016. The seven Labs held a workshop in Albuquerque, NM in late July 2016 and gathered 40 researchers into 5 working groups: 4 groups spanning the levels of the co-design framework shown below, and a 5th working group focused on extending and advancing manufacturing approaches and coupling their constraints to all of the framework levels. These working groups have identified unique capabilities within the Labs to support the key challenges of this Beyond Moore’s Law Computing (BMC) vision, as well as example first steps and potential roadmaps for technology development.
Stark, Andrew S.; Yang, Benjamin B.; Ward, Chris W.; Brothers, Timothy B.; Wagner, Brent W.; Langston, Jerrod L.; Bottenfield, Christian B.; Saha, Gareeyasee S.; Lavrencik, Justin L.; Ralph, Stephen E.; Paollela, Arthur P.; Middleton, Charles M.; DeSalvo, Richard D.; Gehl, M.; DeRose, Christopher T.; Lentine, Anthony L.
Stark, Andrew S.; Yang, Benjamin B.; Ward, Chris W.; Davis, Kyle D.; Brothers, Tim B.; Wagner, Brent W.; Langston, Jerrod L.; Bottenfield, Christian B.; Saha, Gareeyasee S.; Lavrencik, Justin L.; Ralph, Stephen E.; Paollela, Arthur P.; Middleton, Charles M.; DeSalvo, Richard D.; Gehl, M.; DeRose, Christopher T.; Lentine, Anthony L.
An 11-channel 1-GHz bandwidth silicon photonic AWG was fabricated and measured in the lab. Two photonic architectures are presented: (1) RF-envelope detector, and (2) RF downconvertor for digital systems. The RF-envelope detector architecture was modeled based on the demonstrated AWG characteristics to determine estimated system-level RF receiver performance.
Gehl, M.; Stark, Andrew S.; Ward, Chris W.; Yang, Benjamin B.; Brothers, Tim B.; Langston, Jerrod L.; Bottenfield, Christian B.; Saha, Gareeyasee S.; Lavrencik, Justin L.; Ralph, Stephen E.; Paollela, Arthur P.; Middleton, Charles M.; DeSalvo, Richard D.; Gehl, M.; DeRose, Christopher T.; Lentine, Anthony L.
We present a quantitative analysis of the correlation of resonant wavelength variation with process variables, and find that 50% of the resonant wavelength variation for microrings is due to systematic process conditions. We also discuss the improvement of device uniformity by mitigating these systematic variations.
We present our experimental results of ultra efficient (up to 2.16 nm/mW) thermally tunable modulators with n-Type heaters and the Si substrate removed. To our knowledge, this is the most efficient thermally tunable modulator demonstrated at 1550nm to date. We include results of externally heated modulators with commensurate performance enhancements through substrate removal.
We demonstrate a silicon photonic transceiver circuit for high-speed discrete variable quantum key distribution that employs a common structure for transmit and receive functions. The device is intended for use in polarization-based quantum cryptographic protocols, such as BB84. Our characterization indicates that the circuit can generate the four BB84 states (TE/TM/45°/135° linear polarizations) with >30 dB polarization extinction ratios and gigabit per second modulation speed, and is capable of decoding any polarization bases differing by 90° with high extinction ratios.
We experimentally demonstrate ultrahigh extinction ratio (>65 dB) amplitude modulators (AMs) that can be electrically tuned to operate across a broad spectral range of 160 nm from 1480-1640 nm and 95 nm from 1280-1375 nm. Our on-chip AMs employ one extra coupler compared with conventional Mach-Zehnder interferometers (MZI), thus form a cascaded MZI (CMZI) structure. Either directional or adiabatic couplers are used to compose the CMZI AMs and experimental comparisons are made between these two different structures. We investigate the performance of CMZI AMs under extreme conditions such as using 95:5 split ratio couplers and unbalanced waveguide losses. Electro-optic phase shifters are also integrated in the CMZI AMs for high-speed operation. Finally, we investigate the output optical phase when the amplitude is modulated, which provides us valuable information when both amplitude and phase are to be controlled. Our demonstration not only paves the road to applications such as quantum information processing that requires high extinction ratio AMs but also significantly alleviates the tight fabrication tolerance needed for large-scale integrated photonics.
Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.
We demonstrate a silicon photonic transceiver circuit to implement polarization encoding/decoding for DV-QKD. The circuit is capable of encoding BB84 states with >30 dB PER and decoding with >20 dB ER.
We design, fabricate and demonstrate the operation of a compact, 1 GHz resolution silicon arrayed waveguide grating. Active phase correction allows for low channel cross-talk, enabling the demonstration of spectral shaping and RF signal analysis.
We experimentally demonstrate amplitude modulators (AMs) with >65 dB extinction across over a 160 nm spectral range. The output optical phase response is also characterized when the amplitude is modulated.
We demonstrate the operation of silicon micro-disk modulators at temperatures as low as 3.8K. We characterize the steady-state and high-frequency performance and look at the impact of doping concentration.
We demonstrate compact silicon photonic arrayed waveguide gratings with channel spacing down to 1 GHz using active phase correction. The relative phase of each path within the device is directly measured using an interferometer, and two methods of phase optimization are implemented and compared.
A two-part silicon photonic variable optical attenuator is demonstrated in a compact footprint which can provide a high extinction ratio at wavelengths between 1520 nm and 1620 nm. The device was made by following the conventional p-i-n waveguide section by a high-extinction-ratio second-order microring filter section. The rings provide additional on-off contrast by utilizing a thermal resonance shift, which harvested the heat dissipated by current injection in the p-i-n junction. We derive and discuss a simple thermal-resistance model in explanation of these effects.
We describe the challenge of implementing optical interconnect for beyond Moore's electronic devices. In particular, we developed a simple link model and calculated the optical communications energy for logic voltages down to 10 mV. The results of this link model show a limit to the minimum communications energy that depends on the achievable extinction ratio of the devices. This work gives some insight into the tact that should be taken for improved optical devices to have an impact in future computing systems using ultra-low voltage transistor devices.
Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 μs 10%-90% transition time, and with efficiency of 3.2 μW/GHz.
We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.
We demonstrate an on-chip polarization beam splitter (PBS), which is adiabatic for the transverse magnetic mode, and diabatic for the transverse electric mode. The PBS has a simple structure that is tolerant to manufacturing variations and exhibits high polarization extinction ratios over a wide bandwidth.
Small silicon photonics micro-resonator modulators and filters hold the promise for multi-terabit per-second interconnects at energy consumptions well below 1 pJ/bit. To date, no products exist and little known commercial development is occurring using this technology. Why? In this talk, we review the many challenges that remain to be overcome in bringing this technology from the research labs to the field where they can overcome important commercial, industrial, and national security limitations of existing photonic technologies.
This work represents the first complete analysis of the use of a racetrack resonator to measure the insertion loss of efficient, compact photonic components. Beginning with an in-depth analysis of potential error sources and a discussion of the calibration procedure, the technique is used to estimate the insertion loss of waveguide width tapers of varying geometry with a resulting 95% confidence interval of 0.007 dB. The work concludes with a performance comparison of the analyzed tapers with results presented for four taper profiles and three taper lengths.
We review Sandia's silicon photonics platform for national security applications. Silicon photonics offers the potential for extensive size, weight, power, and cost (SWaP-c) reductions compared to existing III-V or purely electronics circuits. Unlike most silicon photonics foundries in the US and internationally, our silicon photonics is manufactured in a trusted environment at our Microsystems and Engineering Sciences Application (MESA) facility. The Sandia fabrication facility is certified as a trusted foundry and can therefore produce devices and circuits intended for military applications. We will describe a variety of silicon photonics devices and subsystems, including both monolithic and heterogeneous integration of silicon photonics with electronics, that can enable future complex functionality in aerospace systems, principally focusing on communications technology in optical interconnects and optical networking.
The last two decades have seen an explosion in worldwide R&D, enabling fundamentally new capabilities while at the same time changing the international technology landscape. The advent of technologies for continued miniaturization and electronics feature size reduction, and for architectural innovations, will have many technical, economic, and national security implications. It is important to anticipate possible microelectronics development directions and their implications on US national interests. This report forecasts and assesses trends and directions for several potentially disruptive microfabrication capabilities and device architectures that may emerge in the next 5-10 years.
Thermal detection has made extensive progress in the last 40 years, however, the speed and detectivity can still be improved. The advancement of silicon photonic microring resonators has made them intriguing for detection devices due to their small size and high quality factors. Implementing silicon photonic microring or microdisk resonators as a means of a thermal detector gives rise to higher speed and detectivity, as well as lower noise compared to conventional devices with electrical readouts. This LDRD effort explored the design and measurements of silicon photonic microdisk resonators used for thermal detection. The characteristic values, consisting of the thermal time constant ({tau} {approx} 2 ms) and noise equivalent power were measured and found to surpass the performance of the best microbolometers. Furthermore the detectivity was found to be D{sub {lambda}} = 2.47 x 10{sup 8} cm {center_dot} {radical}Hz/W at 10.6 {mu}m which is comparable to commercial detectors. Subsequent design modifications should increase the detectivity by another order of magnitude. Thermal detection in the terahertz (THz) remains underdeveloped, opening a door for new innovative technologies such as metamaterial enhanced detectors. This project also explored the use of metamaterials in conjunction with a cantilever design for detection in the THz region and demonstrated the use of metamaterials as custom thin film absorbers for thermal detection. While much work remains to integrate these technologies into a unified platform, the early stages of research show promising futures for use in thermal detection.
A silicon photonics based integrated optical phase locked loop is utilized to synchronize a 10.2 GHz voltage controlled oscillator with a 509 MHz mode locked laser, achieving 32 fs integrated jitter over 300 kHz bandwidth.
A low power modulator is monolithically integrated with a radiation hardened CMOS driver. This integrated optoelectronic device demonstrates 1.68mW power consumption at 2Gbps.
The advent of high quality factor (Q) microphotonic-resonators has led to the demonstration of high-fidelity optical sensors of many physical phenomena (e.g. mechanical, chemical, and biological sensing) often with far better sensitivity than traditional techniques. Microphotonic-resonators also offer potential advantages as uncooled thermal detectors including significantly better noise performance, smaller pixel size, and faster response times than current thermal detectors. In particular, microphotonic thermal detectors do not suffer from Johnson noise in the sensor, offer far greater responsivity, and greater thermal isolation as they do not require metallic leads to the sensing element. Such advantages make the prospect of a microphotonic thermal imager highly attractive. Here, we introduce the microphotonic thermal detection technique, present the theoretical basis for the approach, discuss our progress on the development of this technology and consider future directions for thermal microphotonic imaging. Already we have demonstrated viability of device fabrication with the successful demonstration of a 20{micro}m pixel, and a scalable readout technique. Further, to date, we have achieved internal noise performance (NEP{sub Internal} < 1pW/{radical}Hz) in a 20{micro}m pixel thereby exceeding the noise performance of the best microbolometers while simultaneously demonstrating a thermal time constant ({tau} = 2ms) that is five times faster. In all, this results in an internal detectivity of D*{sub internal} = 2 x 10{sup 9}cm {center_dot} {radical}Hz/W, while roughly a factor of four better than the best uncooled commercial microbolometers, future demonstrations should enable another order of magnitude in sensitivity. While much work remains to achieve the level of maturity required for a deployable technology, already, microphotonic thermal detection has demonstrated considerable potential.